Search Results - "Spijkman, M."

Charge transport in dual-gate organic field-effect transistors by Brondijk, J. J., Spijkman, M., Torricelli, F., Blom, P. W. M., de Leeuw, D. M.

“…The charge carrier distribution in dual-gate field-effect transistors is investigated as a function of semiconductor thickness. A good agreement with…”
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DNA adsorption measured with ultra-thin film organic field effect transistors by Stoliar, P., Bystrenova, E., Quiroga, S.D., Annibale, P., Facchini, M., Spijkman, M., Setayesh, S., de Leeuw, D., Biscarini, F.

“…Organic ultra-thin film field effect transistors (FET) are operated as label-free sensors of deoxyribonucleic acid (DNA) adsorption. Linearized plasmid DNA…”
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Device characteristics of polymer dual-gate field-effect transistors by Maddalena, F., Spijkman, M., Brondijk, J.J., Fonteijn, P., Brouwer, F., Hummelen, J.C., de Leeuw, D.M., Blom, P.W.M., de Boer, B.

“…Dual-gate organic field-effect transistors (OFETs) were fabricated by solution processing using different p-type polymer semiconductors and polymer…”
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Formation of inversion layers in organic field-effect transistors by Brondijk, J. J., Spijkman, M., van Seijen, F., Blom, P. W. M., de Leeuw, D. M.

“…An inversion current in unipolar organic field-effect transistors is not observed, which can be due to trapping of electrons orto negligible electron…”
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Increasing the noise margin in organic circuits using dual gate field-effect transistors by Spijkman, M., Smits, E. C. P., Blom, P. W. M., de Leeuw, D. M., Bon Saint Côme, Y., Setayesh, S., Cantatore, E.

“…Complex digital circuits reliably work when the noise margin of the logic gates is sufficiently high. For p-type only inverters, the noise margin is typically…”
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Origin of the drain current bistability in polymer ferroelectric field-effect transistors by Naber, R. C. G., Massolt, J., Spijkman, M., Asadi, K., Blom, P. W. M., de Leeuw, D. M.

“…The authors present measurements that elucidate the mechanism behind the observed drain current bistability in ferroelectric field-effect transistors based on…”
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Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors by Spijkman, M., Smits, E. C. P., Cillessen, J. F. M., Biscarini, F., Blom, P. W. M., de Leeuw, D. M.

“…The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited to 59   mV / p H , which is the maximum detectable change in…”
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Monolayer dual gate transistors with a single charge transport layer by Spijkman, M., Mathijssen, S. G. J., Smits, E. C. P., Kemerink, M., Blom, P. W. M., de Leeuw, D. M.

“…A dual gate transistor was fabricated using a self-assembled monolayer as the semiconductor. We show the possibility of processing a dielectric on top of the…”
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Increasing the noise margin in organic circuits using dual gatefield-effect transistors by Spijkman, M., Smits, E. C. P., Blom, P. W. M., de Leeuw, D. M., Bon Saint Côme, Y., Setayesh, S., Cantatore, E.

“…Complex digital circuits reliably work when the noise margin of the logic gates is sufficiently high. For p -type only inverters, the noise margin is typically…”
Get full text

Origin of the drain current bistability in polymer ferroelectricfield-effect transistors by Naber, R. C. G., Massolt, J., Spijkman, M., Asadi, K., Blom, P. W. M., de Leeuw, D. M.

“…The authors present measurements that elucidate the mechanism behind the observed drain current bistability in ferroelectric field-effect transistors based on…”
Get full text