Search Results - "Spickermann, Andreas"

Modeling of the charge transfer in a lateral drift field photo detector by Driewer, Adrian, Hosticka, Bedrich J., Spickermann, Andreas, Vogt, Holger

“…In this article a model is introduced that describes the charge transfer in pixels of an image sensor. The model is suitable for image sensors where lateral…”
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Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications by Durini, Daniel, Spickermann, Andreas, Mahdi, Rana, Brockherde, Werner, Vogt, Holger, Grabmaier, Anton, Hosticka, Bedrich J.

“…In this work a theoretical concept and simulations are presented for a novel lateral drift-field photodetector pixel to be fabricated in a 0.35 μm CMOS…”
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CMOS 3D image sensor based on pulse modulated time-of-flight principle and intrinsic lateral drift-field photodiode pixels by Spickermann, A., Durini, D., Suss, A., Ulfig, W., Brockherde, W., Hosticka, B. J., Schwope, S., Grabmaier, A.

“…Design and measurement results of a CMOS 128 × 96 pixel sensor are presented, which can be used for three-dimensional (3D) scene reconstruction applications…”
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Speed considerations for LDPD based time-of-flight CMOS 3D image sensors by Suss, Andreas, Nitta, Christian, Spickermann, Andreas, Durini, Daniel, Varga, Gabor, Jung, Melanie, Brockherde, Werner, Hosticka, Bedrich J., Vogt, Holger, Schwope, Stefan

“…Recently a 128×96 pixel range imager with a pitch of 40 μm and a fill factor of 38 % was presented for 3D range imaging measurements based on the pulse…”
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Pulsed time-of-flight 3D-CMOS imaging using photogate-based active pixel sensors by Spickermann, A., Durini, D., Brocker, S., Brockherde, W., Hosticka, B.J., Grabmaier, A.

“…A novel time-of-flight (ToF) 3D-image sensor based on photogate (PG) active pixel structures fabricated in a standard 0.35 mum CMOS process is presented…”
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Performance considerations for photogate based active pixel sensors by Spickermann, A., Hosticka, B.J., Grabmaier, A.

“…Photogate based active pixel sensors (PG APS) are often used in CMOS imaging. In advanced applications (e.g. high-speed imaging or time-of-flight distance…”
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