Search Results - "Spassov, D."

A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures by Spassov, D., Skeparovski, A., Paskaleva, A., Novkovski, N.

“…The electrical properties of multilayered HfO2/Al2O3/HfO2/SiO2 and ZrO2/Al2O3/ZrO2/SiO2 metal-oxide semiconductor capacitors were investigated in order to…”
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High-k HfO2-Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity by ATANASSOVA, E, GEORGIEVA, M, SPASSOV, D, PASKALEVA, A

“…The electrical properties of mixed HfO2-Ta2O5 films (10; 15 nm) deposited by rf sputtering on Si were studied from the viewpoint of their applications as…”
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Doped Ta2O5 and mixed HfO2–Ta2O5 films for dynamic memories applications at the nanoscale by Atanassova, E., Paskaleva, A., Spassov, D.

“…The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric as a breakthrough to extend the potential of Ta2O5 toward meeting…”
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X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si by Atanassova, E, Spassov, D

“…X-ray photoelectron spectra (XPS) have been recorded for thermally grown thin tantalum pentoxide films on Si. The peak decomposition technique was employed to…”
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Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity by SPASSOV, D, ATANASSOVA, E, PASKALEVA, A

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Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack by Atanassova, E., Novkovski, N., Spassov, D., Paskaleva, A., Skeparovski, A.

“…[Display omitted] •Hf-doped Ta2O5 exhibits improved TDDB characteristics with respect to the pure Ta2O5.•The hard breakdown in Hf-doped Ta2O5 is a complex…”
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Electrical characteristics of Ti-doped Ta2O5 stacked capacitors by ATANASSOVA, E, SPASSOV, D, PASKALEVA, A, GEORGIEVA, M, KOPRINAROVA, J

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Electrical characteristics of Ta2O5 based capacitors with different gate electrodes by SPASSOV, D, ATANASSOVA, E, VIROVSKA, D

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A tumor-suppressing function in the epithelial adhesion protein Trask by Spassov, D S, Wong, C H, Harris, G, McDonough, S, Phojanakong, P, Wang, D, Hann, B, Bazarov, A V, Yaswen, P, Khanafshar, E, Moasser, M M

“…Trask/CDCP1 is a transmembrane glycoprotein widely expressed in epithelial tissues whose functions are just beginning to be understood, but include a role as…”
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Composition of Ta2O5 stacked films on N2O- and NH3-nitrided Si by Atanassova, E., Spassov, D., Paskaleva, A., Kostov, K.

“…The composition and microstructure of rf sputtered 20 nm Ta2O5 on N2O or NH3 Rapid Thermal Nitrided (RTN) Si substrates have been investigated by X-ray…”
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Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks by ATANASSOVA, E, NOVKOVSKI, N, PASKALEVA, A, SPASSOV, D

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Conducting and topographic AFM analysis of Hf-doped and Al-doped Ta2O5 films by ATANASSOVA, E, LYTVYN, P, KONAKOVA, R. V, MITIN, V. F, SPASSOV, D

“…A conductive atomic force microscopy (C-AFM) has been used to study conductivity and electrical degradation of ultrathin (4nm) Hf- and Al-doped Ta2O5 at the…”
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Constant current stress of lightly Al-doped Ta2O5 by Atanassova, E., Spassov, D., Novkovski, N., Paskaleva, A.

“…The response of lightly Al-doped Ta2O5 stacked films (6nm) to constant current stress (CCS) under gate injection (current stress in the range of 1 to 30mA/cm2…”
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Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors by ATANASSOVA, E, SPASSOV, D, PASKALEVA, A

“…The effect of various electrodes (Al, W, TiN) deposited by evaporation (Al) and sputtering (W, TiN) on the electrical characteristics of thermal thin film…”
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Conduction mechanisms in Ta2O5 stack in response to rapid thermal annealing by SPASSOV, D, ATANASSOVA, E

“…The influence of the rapid thermal annealing (RTA) in vacuum at 1000 deg C on the leakage current characteristics and conduction mechanisms in thermal Ta2O5…”
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Hf-doped Ta2O5 stacks under constant voltage stress by Manić, I., Atanassova, E., Stojadinović, N., Spassov, D., Paskaleva, A.

“…The stress-induced leakage current in Hf-doped Ta2O5 layers (7; 10nm) under constant voltage stress at gate injection was investigated in order to assess the…”
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Optimization of HfO2/Al2O3 Dielectric Stacks for Charge Trapping Memories by Spassov, D., Paskaleva, A.

“…In this work, a summary of our recent studies on the potential of HfO2/ AhO3 nanolaminated stacks to be implemented as charge storage layers in CTMs is…”
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Trap parameters and conduction mechanism in HfO2-Ta2O5 mixed stacks in response to microwave irradiation by ATANASSOVA, E, KONAKOVA, R. V, MITIN, V. F, SPASSOV, D

“…The effect of microwave treatment at room temperature on the leakage current and conductivity mechanisms in mixed HfO2-Ta2O5 (10 nm) stacks was studied by…”
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Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors by ATANASSOVA, E, SPASSOV, D, PASKALEVA, A

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Stress in boron nitride nanofilms prepared by rapid thermal annealing by Christova, K, Boradjiev, I, Spassov, D, Beshkov, G

“…Boron Nitride (BN) nanofilms (5-7 nm) were prepared by Rapid Thermal Annealing (RTA) of boron layers deposited on sapphire (AI(20O(3)) substrates in NH(3)…”
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