Search Results - "Soukup, R.J."

Thin films of GeC deposited using a unique hollow cathode sputtering technique by Schrader, J.S., Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J., Exstrom, C.L., Darveau, S.A., Udey, R.N., Dalal, V.L.

“…Experimental results on thin films of the new material Ge x C 1− x , deposited by a unique dual plasma hollow cathode sputtering technique are presented here…”
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Analysis of semiconductor thin films deposited using a hollow cathode plasma torch by Soukup, R.J., Ianno, N.J., Huguenin-Love, J.L.

“…The hollow cathode plasma torch has been used for several years. One of the major applications has been the deposition of dielectric thin films. However, this…”
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Mathematical Modeling and Computer-Aided Manufacturing of Rough Surfaces for Experimental Study of Seafloor Scattering by Summers, J.E., Soukup, R.J., Gragg, R.F.

“…Diverse aspects of stochastic processes, time-series analysis, fractal geometry, and manufacturing technology are brought together to provide a unified…”
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Deposition of high quality amorphous silicon, germanium and silicon-germanium thin films by a hollow cathode reactive sputtering system by Soukup, R.J., Ianno, N.J., Pribil, G., Hubicka, Z.

“…High quality hydrogenated amorphous silicon (a-Si:H), germanium (a-Ge:H) and silicon–germanium (a-SiGe:H) thin films have been deposited by means of a d.c…”
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Epoxy catalyzed sol–gel method for pinhole-free pyrite FeS2 thin films by Kment, S., Kmentova, H., Sarkar, A., Soukup, R.J., Ianno, N.J., Sekora, D., Olejnicek, J., Ksirova, P., Krysa, J., Remes, Z., Hubicka, Z.

“…•Photoactive pyrite thin films can be fabricated by a novel sol–gel route.•The pyrite films are pinhole-free, phase-pure and without contaminants.•The pyrite…”
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A non-vacuum process for preparing nanocrystalline CuIn1-xGaxSe2 materials involving an open-air solvothermal reaction by OLEJNICEK, J, KAMLER, C. A, SOUKUP, R. J, MIRASANO, A, MARTINEZ-SKINNER, A. L, INGERSOLL, M. A, EXSTROM, C. L, DARVEAU, S. A, HUGUENIN-LOVE, J. L, DIAZ, M, IANNO, N. J

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Formation of CuIn1−xAlxSe2 thin films studied by Raman scattering by Olejníček, J., Kamler, C.A., Darveau, S.A., Exstrom, C.L., Slaymaker, L.E., Vandeventer, A.R., Ianno, N.J., Soukup, R.J.

“…CuIn1−xAlxSe2 (CIAS) thin films (x=0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1μm were formed by the selenization of sputtered…”
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CuIn1―xAlxS2 thin films prepared by sulfurization of metallic precursors by OLEJNICEK, J, FLANNERY, L. E, DARVEAU, S. A, EXSTROM, C. L, KMENT, S, IANNO, Nj, SOUKUP, R. J

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CuIn 1− x Al x S 2 thin films prepared by sulfurization of metallic precursors by Olejníček, J., Flannery, L.E., Darveau, S.A., Exstrom, C.L., Kment, Š., Ianno, N.J., Soukup, R.J.

“…► CuIn 1− x Al x S 2 thin films prepared by sulfurization of metallic precursors in sulfur vapors. ► XRD, SEM and Raman spectroscopy. ► CuIn 1− x Al x S 2 thin…”
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Thin films formed by selenization of CuIn x B 1− x precursors in Se vapor by Kamler, C.A., Soukup, R.J., Ianno, N.J., Huguenin-Love, J.L., Olejníček, J., Darveau, S.A., Exstrom, C.L.

“…Previous attempts in producing light absorbing materials with bandgaps near the 1.37 eV efficiency optimum have included the partial substitution of gallium or…”
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A non-vacuum process for preparing nanocrystalline CuIn 1− x Ga x Se 2 materials involving an open-air solvothermal reaction by Olejníček, J., Kamler, C.A., Mirasano, A., Martinez-Skinner, A.L., Ingersoll, M.A., Exstrom, C.L., Darveau, S.A., Huguenin-Love, J.L., Diaz, M., Ianno, N.J., Soukup, R.J.

“…A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn 1− x Ga x Se 2 ( x=0, 0.25, 0.5, 0.75, 1) materials. An open-air…”
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Using spreadsheets to teach problem solving in a first year class by Boye, A.J., Williams, P.F., Soukup, R.J.

“…The problem-solving portion of a two-semester first-year electrical engineering course is described. This course makes use of personal computers and…”
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Thin films of a-SiGe:H with device quality properties prepared by a novel hollow cathode deposition technique by Soukup, R.J., Ianno, N.J., Darveau, Scott A., Exstrom, Christopher L.

“…Using a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H 2 flow, is directed through silicon and…”
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Thin films formed by selenization of CuInxB1-x precursors in Se vapor by KAMLER, C. A, SOUKUP, R. J, IANNO, N. J, HUGUENIN-LOVE, J. L, OLEJNICEK, J, DARVEAU, S. A, EXSTROM, C. L

“…Previous attempts in producing light absorbing materials with bandgaps near the 1.37 eV efficiency optimum have included the partial substitution of gallium or…”
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Investigation of the rf and dc hollow cathode plasma-jet sputtering systems for the deposition of silicon thin films by Hubička, Z., Pribil, G., Soukup, R.J., Ianno, N.J.

“…Both rf and dc hollow cathode plasma-jet sputtering systems have been investigated for thin film semiconductor deposition. These systems were studied as a…”
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Self organized nanostructures of vapor phase grown CuGaS2 thin films by Prabukanthan, P., Harichandran, G., Soukup, R.J., Ianno, N.J., Exstrom, C.L., Darveau, S.A., Olejnicek, J.

“…Thin films of nanocrystalline CuGaS 2 chalcopyrites have been prepared by chemical vapor transport (CVT) using elements of Cu, Ga, and S with iodine as the…”
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Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering technique by Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J., Schrader, J.S., Thompson, D.W., Dalal, V.L.

“…Experimental results on thin films of the new material Ge x C 1− x , deposited by a unique dual plasma hollow cathode sputtering technique, are presented. The…”
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The Properties of Ge-C Thin Films Deposited using Dual Hollow Cathodes by Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J., Schrader, J.S., Dalal, V.L.

“…Experimental results on thin films of the new material Ge x C 1-x , deposited by a unique dual plasma hollow cathode sputtering technique are presented. The…”
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Topography measurement of scale-model representations of the rough ocean bottom by touch-trigger probe and its implications for spectral characterization by Summers, J.E., Gragg, R.F., Soukup, R.J.

“…Scale models of the ocean bottom exhibiting multiscale roughness having power-law form power-spectral density are useful for validation of deterministic and…”
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Germanium nitride layers prepared by supersonic r.f. plasma jet by Soukup, L., Peřina, V., Jastrabík, L., Šícha, M., Pokorný, P., Soukup, R.J., Novák, M., Zemek, J.

“…Rutherford backscattering spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) have been used to characterize Ge x N y films grown on Si substrates…”
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