Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

Scanning tunneling spectroscopy was used to investigate surface doping in silicon, based on the grafting of a boron-containing molecular layer and the subsequent thermal diffusion of boron into silicon. Curve fitting of the experimental I(V) characteristics with a planar computation of the tunnel cu...

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Bibliographic Details
Published in:Microelectronic engineering Vol. 149; pp. 125 - 128
Main Authors: Sossoe, K.K., Durand, C., Mathey, L., Alphazan, T., Sylla, A., Dzagli, M.M., Mohou, M.A., Nys, J.P., Berthe, M., Thieuleux, C., Copéret, C., Barnes, J.P., Grandidier, B.
Format: Journal Article
Language:English
Published: Elsevier B.V 05-01-2016
Elsevier
Subjects:
Boron
Condensed Matter
Diffusion
Doping
Electrical measurement
Materials Science
Physics
Scanning tunneling microscopy
Secondary ion mass spectrometry
Silicon
Surface doping
Thermal diffusion
Transport simulation
Transport simulation
Silicon
Surface doping
Diffusion
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Summary:Scanning tunneling spectroscopy was used to investigate surface doping in silicon, based on the grafting of a boron-containing molecular layer and the subsequent thermal diffusion of boron into silicon. Curve fitting of the experimental I(V) characteristics with a planar computation of the tunnel current yields a dopant concentration that is consistent with secondary ion mass spectrometry analyses in the subsurface region. Additional two-point probe electrical measurements performed at variable tip separations indicate a bulk-like transport, that corresponds to a significant diffusion of the boron impurities below the surface of low doped n-type Si wafers. Such results show the interest of multiple-probe scanning tunneling microscopy as a non-invasive technique to determine the electrically active content of doped layers during the fabrication of advanced integrated circuits. [Display omitted] •Boron-doping of silicon from molecular monolayer doping•Tunneling spectroscopy analysis of the surface•Surface doping from correlation with numerical simulations
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ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2015.10.002