Efficient Spin-Selective Electron Transport at Low Voltages of Thia-Bridged Triarylamine Hetero[4]helicenes Chemisorbed Monolayer

The Chirality Induced Spin Selectivity (CISS) effect describes the capability of chiral molecules to act as spin filters discriminating flowing electrons according to their spin state. Within molecular spintronics, efforts are focused on developing chiral-molecule-based technologies to control the i...

Full description

Saved in:
Bibliographic Details
Published in:ACS nano Vol. 17; no. 15; pp. 15189 - 15198
Main Authors: Giaconi, Niccolò, Poggini, Lorenzo, Lupi, Michela, Briganti, Matteo, Kumar, Anil, Das, Tapan K., Sorrentino, Andrea L., Viglianisi, Caterina, Menichetti, Stefano, Naaman, Ron, Sessoli, Roberta, Mannini, Matteo
Format: Journal Article
Language:English
Published: United States American Chemical Society 08-08-2023
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The Chirality Induced Spin Selectivity (CISS) effect describes the capability of chiral molecules to act as spin filters discriminating flowing electrons according to their spin state. Within molecular spintronics, efforts are focused on developing chiral-molecule-based technologies to control the injection and coherence of spin-polarized currents. Herein, for this purpose, we study spin selectivity properties of a monolayer of a thioalkyl derivative of a thia-bridged triarylamine hetero[4]­helicene chemisorbed on a gold surface. A stacked device assembled by embedding a monolayer of these molecules between ferromagnetic and diamagnetic electrodes exhibits asymmetric magnetoresistance with inversion of the signal according to the handedness of molecules, in line with the presence of the CISS effect. In addition, magnetically conductive atomic force microscopy reveals efficient electron spin filtering even at unusually low potentials. Our results demonstrate that thia[4]­heterohelicenes represent key candidates for the development of chiral spintronic devices.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.3c04878