Search Results - "Sormunen, Jaakko"
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Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
Published in IEEE electron device letters (01-07-2018)“…The backgating effect on trench-isolated enhancement-mode p-GaN devices fabricated on 200-mm GaN-on-SOI was investigated. We show that to minimize the…”
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200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration
Published in IEEE electron device letters (01-07-2017)“…Monolithic integration of a half bridge on the same GaN-on-Si wafer is very challenging because the devices share a common conductive Si substrate. In this…”
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Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots
Published in Japanese Journal of Applied Physics (01-01-2005)“…Low-temperature photoluminescence (PL), tunable between 1.3 and 1.7 µm, is obtained from strain-induced quantum dots (SIQDs). The quantum dots are fabricated…”
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InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands
Published in Japanese Journal of Applied Physics (01-01-2005)“…A material system utilizing InGaAs/InP quantum wells (QWs) and InAs islands to create strain-induced quantum dots (SIQDs) is introduced. The SIQDs are…”
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Evolution of Self-Assembled InAs/InP Islands into Quantum Rings
Published in Japanese Journal of Applied Physics (01-01-2005)“…Fabrication of quantum rings (QRs) by transforming self-assembled InAs islands on InP is studied. The islands are annealed in-situ in a tertiarybutylphosphine…”
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Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
Published in IEEE transactions on electron devices (01-01-2019)“…A comprehensive study on buffer vertical leakage mechanism and buffer reliability of 200-mm GaN-on-SOI is conducted in this paper. The buffer vertical leakage…”
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Transformation of Self-Assembled InAs/InP Quantum Dots into Quantum Rings without Capping
Published in Nano letters (01-08-2005)“…Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III−V…”
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