Search Results - "Sormunen, Jaakko"

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  1. 1

    Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration by Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Geens, Karen, Guo, Weiming, You, Shuzhen, Stoffels, Steve, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Decoutere, Stefaan

    Published in IEEE electron device letters (01-07-2018)
    “…The backgating effect on trench-isolated enhancement-mode p-GaN devices fabricated on 200-mm GaN-on-SOI was investigated. We show that to minimize the…”
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    Journal Article
  2. 2

    200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration by Xiangdong Li, Van Hove, Marleen, Ming Zhao, Geens, Karen, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Decoutere, Stefaan

    Published in IEEE electron device letters (01-07-2017)
    “…Monolithic integration of a half bridge on the same GaN-on-Si wafer is very challenging because the devices share a common conductive Si substrate. In this…”
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    Journal Article
  3. 3

    Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots by Riikonen, Juha, Sormunen, Jaakko, Koskenvaara, Hannu, Mattila, Marco, Sopanen, Markku, Lipsanen, Harri

    Published in Japanese Journal of Applied Physics (01-01-2005)
    “…Low-temperature photoluminescence (PL), tunable between 1.3 and 1.7 µm, is obtained from strain-induced quantum dots (SIQDs). The quantum dots are fabricated…”
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    Journal Article
  4. 4

    InGaAs/InP Quantum Dots Induced by Self-Organized InAs Stressor-Islands by Riikonen, Juha, Sormunen, Jaakko, Mattila, Marco, Sopanen, Markku, Lipsanen, Harri

    Published in Japanese Journal of Applied Physics (01-01-2005)
    “…A material system utilizing InGaAs/InP quantum wells (QWs) and InAs islands to create strain-induced quantum dots (SIQDs) is introduced. The SIQDs are…”
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    Journal Article
  5. 5

    Evolution of Self-Assembled InAs/InP Islands into Quantum Rings by Sormunen, Jaakko, Riikonen, Juha, Hakkarainen, Teppo, Sopanen, Markku, Lipsanen, Harri

    Published in Japanese Journal of Applied Physics (01-01-2005)
    “…Fabrication of quantum rings (QRs) by transforming self-assembled InAs islands on InP is studied. The islands are annealed in-situ in a tertiarybutylphosphine…”
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    Journal Article
  6. 6

    Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI by Li, Xiangdong, Zhao, Ming, Bakeroot, Benoit, Geens, Karen, Guo, Weiming, You, Shuzhen, Stoffels, Steve, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Decoutere, Stefaan

    Published in IEEE transactions on electron devices (01-01-2019)
    “…A comprehensive study on buffer vertical leakage mechanism and buffer reliability of 200-mm GaN-on-SOI is conducted in this paper. The buffer vertical leakage…”
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    Journal Article
  7. 7

    Transformation of Self-Assembled InAs/InP Quantum Dots into Quantum Rings without Capping by Sormunen, Jaakko, Riikonen, Juha, Mattila, Marco, Tiilikainen, Jouni, Sopanen, Markku, Lipsanen, Harri

    Published in Nano letters (01-08-2005)
    “…Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III−V…”
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    Journal Article