Search Results - "Soref, R."

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  1. 1

    The Past, Present, and Future of Silicon Photonics by Soref, R.

    “…The pace of the development of silicon photonics has quickened since 2004 due to investment by industry and government. Commercial state-of-the-art CMOS…”
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  2. 2

    GeSn-based p-i-n photodiodes with strained active layer on a Si wafer by Tseng, H. H., Li, H., Mashanov, V., Yang, Y. J., Cheng, H. H., Chang, G. E., Soref, R. A., Sun, G.

    Published in Applied physics letters (02-12-2013)
    “…We report an investigation of GeSn-based p-i-n photodiodes with an active GeSn layer that is almost fully strained. The results show that (a) the response of…”
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  3. 3

    Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode by Sun, G, Soref, R A, Cheng, H H

    Published in Optics express (13-09-2010)
    “…This paper presents modeling and simulation of a silicon-based group IV semiconductor injection laser diode in which the active region has a multiple quantum…”
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  4. 4

    Germanium as a material for stimulated Brillouin scattering in the mid-infrared by Wolff, C, Soref, R, Poulton, C G, Eggleton, B J

    Published in Optics express (15-12-2014)
    “…In a theoretical design study, we propose buried waveguides made of germanium or alloys of germanium and other group-IV elements as a CMOS-compatible platform…”
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  5. 5

    Longwave IR lattice matched L-valley Ge/GeSiSn waveguide quantum cascade detector by Sun, G., Soref, R. A., Khurgin, J. B., Yu, S.-Q., Chang, Guo-En

    Published in Optics express (07-11-2022)
    “…We propose a lattice-matched Ge/GeSiSn quantum cascade detector (QCD) capable of operating in the longwave infrared. The optical absorption and carrier…”
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  6. 6

    Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination by Chang, C., Li, H., Huang, S. H., Cheng, H. H., Sun, G., Soref, R. A.

    Published in Applied physics letters (11-04-2016)
    “…We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent…”
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  7. 7

    Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy by Li, H., Chang, C., Cheng, H. H., Sun, G., Soref, R. A.

    Published in Applied physics letters (09-05-2016)
    “…We report an investigation on the absorption mechanism of a GeSn photodetector with 2.4% Sn composition in the active region. Responsivity is measured and…”
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  8. 8

    Design and simulation of silicon microring optical routing switches by Emelett, S.J., Soref, R.

    Published in Journal of lightwave technology (01-04-2005)
    “…Using two-dimensional (2-D) scattering matrix theory, the switching behavior of inplane waveguided 2 /spl times/ 2 resonant optical switches in…”
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  9. 9

    High efficiency thin-film crystalline Si/Ge tandem solar cell by Sun, G, Chang, F, Soref, R A

    Published in Optics express (15-02-2010)
    “…We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have…”
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  10. 10

    Practical enhancement of photoluminescence by metal nanoparticles by Sun, G., Khurgin, J. B., Soref, R. A.

    Published in Applied physics letters (09-03-2009)
    “…We develop a simple yet rigorous theory of the photoluminescence (PL) enhancement in the vicinity of metal nanoparticles. The enhancement takes place during…”
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  11. 11

    Simulations of Nanoscale Room Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon Photonic Sensing and Quantum Applications by Soref, R. A, De Leonardis, F, Passaro, V. M. N

    Published in ACS applied nano materials (27-12-2019)
    “…Photonic qubits can represent an ideal choice in quantum information science since photons travel at the speed of light and interact weakly with the…”
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  12. 12

    Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate by Tseng, H. H., Wu, K. Y., Li, H., Mashanov, V., Cheng, H. H., Sun, G., Soref, R. A.

    Published in Applied physics letters (06-05-2013)
    “…We report the observation of mid-infrared room-temperature electroluminescence from a p-i-n Ge/Ge0.922Sn0.078/Ge double heterostructure diode. The device…”
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  13. 13

    Practical limits of absorption enhancement near metal nanoparticles by Khurgin, J. B., Sun, G., Soref, R. A.

    Published in Applied physics letters (16-02-2009)
    “…We consider the enhanced absorption of optical radiation by molecules placed in the vicinity of spherical metal nanoparticles in the realistic situation that…”
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  14. 14

    Synthesis of dual-microring-resonator cross-connect filters by Emelett, S, Soref, R

    Published in Optics express (13-06-2005)
    “…A new type of resonant, waveguided, 2 x 2 cross-connect optical filter is proposed and synthesized using a microwave filter analog. The optical passbands of…”
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  15. 15

    Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions by Sun, G., Cheng, H. H., Menéndez, J., Khurgin, J. B., Soref, R. A.

    Published in Applied physics letters (18-06-2007)
    “…The authors propose a Ge∕Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a “clean” offset…”
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  16. 16

    Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1-14- \mu\hbox Infrared Wavelength Range by Nedeljkovic, M., Soref, R., Mashanovich, G. Z.

    Published in IEEE photonics journal (01-12-2011)
    “…We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range…”
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  17. 17

    SiGe/Si THz laser based on transitions between inverted mass light-hole and heavy-hole subbands by Friedman, L., Sun, G., Soref, R. A.

    Published in Applied physics letters (22-01-2001)
    “…We have investigated a SiGe/Si quantum-well laser based on transitions between the light-hole and heavy-hole subbands. The lasing occurs in the region of k…”
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  18. 18

    Silicon-based optoelectronics by Soref, R.A.

    Published in Proceedings of the IEEE (01-12-1993)
    “…The decade of the 1990's is an opportune time for scientists and engineers to create cost-effective silicon "superchips" that merge silicon photonics with…”
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  19. 19

    Tunable microwave filtering using high dispersion fiber time delays by Norton, D., Johns, S., Keefer, C., Soref, R.

    Published in IEEE photonics technology letters (01-07-1994)
    “…We have demonstrated a tapped delay line microwave filter based on the use of high dispersion fiber as the tunable time delay. This system offers advantages of…”
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  20. 20

    Population-inversion and gain estimates for a semiconductor TASER by Harrison, P., Soref, R.A.

    Published in IEEE journal of quantum electronics (01-01-2001)
    “…We have investigated a solid-state design advanced (see Soref et al. in SPIE Proceedings, vol.3795, p.516, 1999) to achieve a…”
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