Search Results - "Songang Peng"

Emerging Internet of Things driven carbon nanotubes-based devices by Zhang, Shu, Pang, Jinbo, Li, Yufen, Yang, Feng, Gemming, Thomas, Wang, Kai, Wang, Xiao, Peng, Songang, Liu, Xiaoyan, Chang, Bin, Liu, Hong, Zhou, Weijia, Cuniberti, Gianaurelio, Rümmeli, Mark H.

“…Carbon nanotubes (CNTs) have attracted great attentions in the field of electronics, sensors, healthcare, and energy conversion. Such emerging applications…”
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Effect of annealing temperature on solar-blind photodetectors based on 60-nm-thick Ga2O3 films by Wang, Shaoqing, Cheng, Nini, Zhong, Guoen, Liu, Xiangtai, Wang, Zhan, Chen, Haifeng, Jia, Yifan, Peng, Songang

“…In this study, 60-nm-thick Ga 2 O 3 films were deposited on c -plane sapphire substrates by atomic layer deposition process. The effect of annealing…”
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Single‐Crystal MoS2 Monolayer Wafer Grown on Au (111) Film Substrates by Li, Jing, Wang, Shuang, Jiang, Qi, Qian, Haoji, Hu, Shike, Kang, He, Chen, Chen, Zhan, Xiaoyi, Yu, Aobo, Zhao, Sunwen, Zhang, Yanhui, Chen, Zhiying, Sui, Yanping, Qiao, Shan, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu

“…Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next‐generation electronics. Researches on…”
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Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor by Peng, Songang, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Mao, Dacheng, Wang, Shaoqing, Yu, Guanghui

“…A top-gated graphene FET with an ultralow 1/f noise level of 1.8 × 10–12 μm2Hz1– (f = 10 Hz) has been fabricated. The noise has the least value at Dirac point,…”
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Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors by Huang, Xinnan, Yao, Yao, Peng, Songang, Zhang, Dayong, Shi, Jingyuan, Jin, Zhi

“…The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS2 field effect…”
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Interface Characterization of Graphene‐Silicon Heterojunction Using Hg Probe Capacitance–Voltage Measurement by Wang, Ting, Peng, Songang, Jin, Zhi, Hu, Chen, Tian, He

“…Investigating the intrinsic properties of the Schottky interface between graphene and 3D bulk silicon is crucial. However, the semiconductor technology…”
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The Roadmap of 2D Materials and Devices Toward Chips by Liu, Anhan, Zhang, Xiaowei, Liu, Ziyu, Li, Yuning, Peng, Xueyang, Li, Xin, Qin, Yue, Hu, Chen, Qiu, Yanqing, Jiang, Han, Wang, Yang, Li, Yifan, Tang, Jun, Liu, Jun, Guo, Hao, Deng, Tao, Peng, Songang, Tian, He, Ren, Tian-Ling

“…Highlights This review introduces the potential of 2D electronics for post-Moore era and discusses their current progress in digital circuits, analog circuits,…”
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Seeding-Layer-Free Deposition of High-k Dielectric on CVD Graphene for Enhanced Gate Control Ability by Yan, Yunpeng, Peng, Songang, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan

“…The gate insulator is one of the most crucial factors determining the performance of a graphene field effect transistor (GFET). Good electrostatic control of…”
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The Effect of a Vacuum Environment on the Electrical Properties of a MoS2 Back-Gate Field Effect Transistor by Li, Jichao, Peng, Songang, Jin, Zhi, Tian, He, Wang, Ting, Peng, Xueyang

“…Adsorption of gas molecules on the surface of two-dimensional (2D) molybdenum disulfide (MoS2) can significantly affect its carrier transport properties. In…”
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Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene by Peng, Songang, Zhang, Jing, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Wei, Shuhua

“…The top-gated graphene field effect transistor (GFET) with electric-field induced doping polarity conversion has been demonstrated. The polarity of channel…”
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Detecting the Repair of Sulfur Vacancies in CVD-Grown MoS2 Domains via Hydrogen Etching by Hu, Shike, Li, Jing, Wang, Shuang, Liang, Yijian, Kang, He, Zhang, Yanhui, Chen, Zhiying, Sui, Yanping, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu

“…Inherent sulfur vacancies in molybdenum disulfide (MoS 2 ) films grown via chemical vapor deposition have restricted the practical application of MoS 2 in…”
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Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering by Peng, Songang, Jin, Zhi, Yao, Yao, Huang, Xinnan, Zhang, Dayong, Niu, Jiebin, Shi, Jingyuan, Zhang, Yanhui, Yu, Guanghui

“…Modulating the electronic property of graphene by doping is essential for its device and circuit applications. Unfortunately, controllable p‐ and n‐type doping…”
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Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping by Songang Peng, Zhi Jin, Yao Yao, Ling Li, Dayong Zhang, Jingyuan Shi, Xinnan Huang, Jiebin Niu, Yanhui Zhang, Guanghui Yu

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Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition by Sui, Yanping, Chen, Zhiying, Zhang, Yanhui, Hu, Shike, Liang, Yijian, Ge, Xiaoming, Li, Jing, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu

“…This study investigates the growth promotion of vertically oriented graphene in plasma-enhanced chemical vapor deposition through Ar plasma treatment. Combined…”
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Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping by Peng, Songang, Jin, Zhi, Yao, Yao, Li, Ling, Zhang, Dayong, Shi, Jingyuan, Huang, Xinnan, Niu, Jiebin, Zhang, Yanhui, Yu, Guanghui

“…An understanding of the charge transport of atomically thin molybdenum sulfide (MoS2) beneath the metal electrode is important to the fabrication of high…”
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Opposite doping distribution in TMD monolayer regulated by VLS and VSS growth mechanism by Tian, Chuang, Xiao, Runhan, Sui, Yanping, Feng, Yuhan, Wang, Haomin, Zhao, Sunwen, Liu, Jiawen, Gao, Xiuli, Sun, Hao, Peng, Songang, Jin, Zhi, Liu, Xinyu, Wang, Shuang, Li, Pai, Yu, Guanghui

“…Doping is crucial for improving the properties of transition metal dichalcogenide (TMD) monolayers. However, most existing studies have focused on doping…”
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Nondestructive visualization of graphene on Pt with methylene blue surface modification by Kang, He, Zhang, Yanhui, Wu, Yun, Hu, Shike, Li, Jing, Chen, Zhiying, Sui, Yanping, Wang, Shuang, Zhao, Sunwen, Xiao, Runhan, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu

“…Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of graphene…”
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Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition by Hu, Shike, Li, Jing, Zhan, Xiaoyi, Wang, Shuang, Lei, Longbiao, Liang, Yijian, Kang, He, Zhang, Yanhui, Chen, Zhiying, Sui, Yanping, Jiang, Da, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu

“…This study reports the growth of aligned monolayer molybdenum disulfide (MoS 2 ) ribbons on a sapphire substrate via NaOH-assisted chemical vapor deposition…”
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Chemical vapor deposition growth and characterization of graphite-like film by Zhang, Yanhui, Shu, Haibo, Chen, Zhiying, Mu, Gang, Sui, Yanping, Liang, Yijian, Hu, Shike, Li, Jing, Kang, He, Yu, Guanghui, Peng, Songang, Jin, Zhi, Liu, Xinyu

“…Thick graphene film can be widely used in surface protection, heat dissipation, heating devices and other fields. Here we present a study on the growth and…”
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Dielectrics for 2-D Electronics: From Device to Circuit Applications by Liu, Anhan, Peng, Xueyang, Peng, Songang, Tian, He

“…2-D electronics is an important pathway to develop advanced monolithic integrated circuits. Due to the nature of the van der Waals force between 2-D materials…”
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