Optical and electrical properties of transparent conducting gallium-doped ZnO electrodes prepared by atomic layer deposition for application in organic solar cells

Transparent and conducting gallium-doped ZnO electrodes were fabricated by means of atomic layer deposition. The electrode showed the lowest resistivity of 7.19×10−4Ωcm at a 5% cyclic layer deposition ratio of Trimethyl-gallium and Diethyl-zinc chemicals. The electrodes showed minimum resistivity wh...

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Bibliographic Details
Published in:	Thin solid films Vol. 546; pp. 271 - 274
Main Authors:	Song, Yoon Seog, Seong, Nak Jin, Choi, Kyu Jeong, Ryu, Sang Ouk
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-11-2013 Elsevier
Subjects:	ALD Applied sciences Bulk hetero junction Condensed matter: electronic structure, electrical, magnetic, and optical properties Conduction Cross-disciplinary physics: materials science; rheology Deposition Electrical resistivity Electrodes Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Energy Equivalence Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Natural energy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Organic solar cell P3HT PCBM PCE Photovoltaic cells Photovoltaic conversion Physics Solar cells Solar cells. Photoelectrochemical cells Solar energy TMG Vapor phase epitaxy; growth from vapor phase Zinc oxide Bulk hetero junction PCE Organic solar cell ALD P3HT PCBM TMG Solar cells Gallium Atomic layer method Electrical conductivity Electrical properties Doping Crystal growth from vapors Layer thickness Indium oxide Zinc Thiophene derivative polymer Tin oxide Optical properties Absorption spectra Nanomaterial synthesis
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Summary:	Transparent and conducting gallium-doped ZnO electrodes were fabricated by means of atomic layer deposition. The electrode showed the lowest resistivity of 7.19×10−4Ωcm at a 5% cyclic layer deposition ratio of Trimethyl-gallium and Diethyl-zinc chemicals. The electrodes showed minimum resistivity when deposited at a temperature of 250°C. The electrode also showed optical transmittance of about 82%–89% with film thicknesses between 100nm and 300nm. An organic solar cell made with a 300-nm-thick gallium-doped ZnO electrode exhibited 2.5% power conversion efficiency, and an efficiency equivalent to that of cells made with conventional indium tin oxide electrodes. •Ga-doped ZnO thin films were successfully grown by atomic layer deposition•The grown thin film has low resistivity compatible to conventional ITO electrodes•The Ga-doped ZnO films were successfully integrated into organic solar cells•The power conversion efficiency was equivalent to the cells with ITO electrodes
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2013.04.063