Search Results - "Song, Yoon J."

Some characterizations of cone preserving Z-transformations by Gowda, M. Seetharama, Song, Yoon J., Sivakumar, K. C.

“…Given a proper cone K in a finite dimensional real Hilbert space H , we present some results characterizing Z -transformations that keep K invariant. We show…”
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Integration technology for ferroelectric memory devices by Kim, Kinam, Song, Yoon J.

“…Ferroelectric devices have been developed for future memory devices due to their ideal memory properties such as non-volatility, fast access time, and low…”
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Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1−xTix)O3 thin films by Song, Yoon J., Zhu, Yongfei, Desu, Seshu B.

“…A novel processing method is developed for preparing sol-gel derived Pb(Zr1−xTix)O3 (x=0.47) thin films on Pt/Ti/SiO2/Si substrates. Using a modified precursor…”
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Laser-assisted low temperature processing of Pb(Zr, Ti)O3 thin film by Zhu, Yongfei, Zhu, Jinsong, Song, Yoon J., Desu, S. B.

“…A method for lowering the processing temperature of PbZr1−xTixO3 (PZT) films was developed utilizing a laser-assisted two-step process. In the first step,…”
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Integration and electrical properties of diffusion barrier for high density ferroelectric memory by Song, Yoon J., Kim, H. H., Lee, Sung Y., Jung, D. J., Koo, B. J., Lee, J. K., Park, Y. S., Cho, H. J., Park, S. O., Kim, Kinam

“…A reliable Ir diffusion barrier was prepared on polysilicon plugged substrate with a contact size of 0.6 μm. Using a Ti adhesion layer and stress-relief…”
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Current and Future High Density FRAM Technology by KIM, KINAM, SONG, YOON J.

“…Current high density FRAM devices have been fabricated by developing several novel integration technologies such as capacitor technology and process…”
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Electrical properties of highly reliable plug buffer layer for high-density ferroelectric memory by Song, Yoon J., Koo, B. J., Lee, J. K., Kim, C. J., Jang, N. W., Kim, H. H., Jung, D. J., Lee, S. Y., Kim, Kinam

“…A CoSi2 buffer layer was prepared in polycrystalline silicon (polysilicon) plug for preventing an undesired microvoid between the polysilicon plug and Ir/Ti…”
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Highly reliable etching mask technology for high density fram by Song, Yoon J., Jang, N. W., Lee, S. Y., Jung, D. J., Kim, H. H., Joo, S. H., Lee, J. K., Kim, C. J., Kim, Kinam

“…It is well known that ferroelectric capacitors are degraded during etching process due to its highly energetic ion bombardment. The etching damage is…”
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Integration Technology of Interlayer and Intermetallic Dielectrics for High Density 32Mb FRAM by Song, Yoon J., Joo, H. J., Jang, N. W., Lee, S. Y., Kim, H. H., Park, Y. S., Kim, Kinam

“…Ferroelectric capacitors are severely degraded by integrating interlayer dielectrics (ILD) and intermetallic dielectrics (IMD) due to their undesired hydrogen…”
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A novel diffusion barrier using oxygen stopping layer for high density FRAM by Song, Yoon J., Kim, H. H., Lee, S. Y., Jung, D. J., Koo, B. J., Chang, N. W., Kim, C. J., Kim, Kinam

“…A novel diffusion barrier was successfully developed by using an oxygen stopping layer between Ir barrier films. The oxygen stopping layer was generated by…”
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Insulin-Like Growth Factor-I, Insulin-Like Growth Factor Binding Protein-3 and Risk of Benign Prostate Hyperplasia in the Prostate Cancer PreventionTrial by NEUHOUSER, Marian L, SCHENK, Jeannette, YOON JU SONG, TANGEN, Catherine M, GOODMAN, Phyllis J, POLLAK, Michael, PENSON, David F, THOMPSON, Ian M, KRISTAL, Alan R

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