Search Results - "Song, Taejoong"
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A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization
Published in IEEE journal of solid-state circuits (01-01-2017)“…Two 128 Mb 6T SRAM test chips are implemented in a 10 nm FinFET technology. A 0.040 μm 2 6T SRAM bitcell is designed for high density (HD), and 0.049 μm 2 for…”
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Journal Article -
2
Embedded MRAM Macro for eFlash Replacement
Published in 2018 IEEE International Symposium on Circuits and Systems (ISCAS) (01-05-2018)“…In this paper, we have presented 28-nm embedded 8Mb 64 I/O Spin-Transfer-Torque Magnetic RAM (STT-MRAM) Macro. Besides being the one of the world's first mass…”
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Conference Proceeding -
3
Bitline Charge-Recycling SRAM Write Assist Circuitry for V} Improvement and Energy Saving
Published in IEEE journal of solid-state circuits (01-03-2019)“…Bitline (BL) charge-recycling-based static random access memory (SRAM) write assist circuits (BCR-WA) are proposed to reduce the minimum operating voltage (V…”
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Journal Article -
4
A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01-02-2018)“…SRAM plays an integral role in the power, performance, and area of a mobile system-on-a-chip. To achieve low power and high density, extreme ultraviolet (EUV)…”
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Conference Proceeding -
5
An Embedded Level-Shifting Dual-Rail SRAM for High-Speed and Low-Power Cache
Published in IEEE access (2020)“…An embedded level-shifting (ELS) dual-rail SRAM is proposed to enhance the availability of dual-rail SRAMs. Although dual-rail SRAM is a powerful solution for…”
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Journal Article -
6
Offset-Compensated Cross-Coupled PFET Bit-Line Conditioning and Selective Negative Bit-Line Write Assist for High-Density Low-Power SRAM
Published in IEEE transactions on circuits and systems. I, Regular papers (01-04-2015)“…An offset-compensated cross-coupled PFET bit-line (BL) conditioning circuit (OC-CPBC) and a selective negative BL write-assist circuit (SNBL-WA) are proposed…”
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Journal Article -
7
Trip-Point Bit-Line Precharge Sensing Scheme for Single-Ended SRAM
Published in IEEE transactions on very large scale integration (VLSI) systems (01-07-2015)“…A trip-point bit-line precharge (TBP) sensing scheme is proposed for high-speed single-ended static random-access memory (SRAM). This TBP scheme mitigates the…”
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24.3 A 3nm Gate-All-Around SRAM Featuring an Adaptive Dual-BL and an Adaptive Cell-Power Assist Circuit
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13-02-2021)“…Advanced technologies help to improve SRAM performance via recent transistor breakthroughs [1], which allow SRAM designers to focus on handling metal…”
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Conference Proceeding -
9
A Fully Integrated UHF-Band CMOS Receiver With Multi-Resolution Spectrum Sensing (MRSS) Functionality for IEEE 802.22 Cognitive Radio Applications
Published in IEEE journal of solid-state circuits (01-01-2009)“…Fast and accurate spectrum sensing is one of the most important functions in a cognitive radio (CR) seeking to use the licensed but unoccupied spectrum…”
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Journal Article Conference Proceeding -
10
Switching pMOS Sense Amplifier for High-Density Low-Voltage Single-Ended SRAM
Published in IEEE transactions on circuits and systems. I, Regular papers (01-06-2015)“…A switching pMOS sense amplifier (SPSA) is proposed for high-speed single-ended static RAM sensing. By using the same pull-up pMOS transistor for sensing and…”
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Journal Article -
11
Bitline Precharging and Preamplifying Switching pMOS for High-Speed Low-Power SRAM
Published in IEEE transactions on circuits and systems. II, Express briefs (01-11-2016)“…A pMOS transistor with a switch is used for two purposes in a differential bitline: precharging and preamplifying during a read operation. These functions are…”
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Journal Article -
12
A 14 nm FinFET 128 Mb SRAM With V Enhancement Techniques for Low-Power Applications
Published in IEEE journal of solid-state circuits (01-01-2015)“…Two 128 Mb dual-power-supply SRAM chips are fabricated in a 14 nm FinFET technology. A 0.064 μm 2 and a 0.080 μm 2 6T SRAM bitcells are designed for…”
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13
A CMOS Integrated Analog Pulse Compressor for MIMO Radar Applications
Published in IEEE transactions on microwave theory and techniques (01-04-2010)“…Conventional radar pulse compressors use either surface acoustic wave devices or fast convolution processing, but both solutions have significant drawbacks. To…”
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14
A 122-mW Low-Power Multiresolution Spectrum-Sensing IC With Self-Deactivated Partial Swing Techniques
Published in IEEE transactions on circuits and systems. II, Express briefs (01-03-2010)“…A low-power multiresolution spectrum-sensing (LP-MRSS) IC utilizing self-deactivated partial swing techniques is fabricated in 0.18-¿m complementary…”
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15
A Low-Power CMOS Antenna-Switch Driver Using Shared-Charge Recycling Charge Pump
Published in IEEE transactions on microwave theory and techniques (01-12-2010)“…A technique to reduce power consumption of charge-pump-based antenna-switch drivers by recycling wasted charges in clock buffers of charge pumps is presented…”
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16
Low-Power Technique for SRAM-Based On-Chip Arbitrary-Waveform Generator
Published in IEEE transactions on instrumentation and measurement (01-04-2011)“…A low-power technique for a static random-access memory (SRAM)-based on-chip arbitrary-waveform generator (AWG) is proposed for two types of…”
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17
Power analysis of asynchronous design using charge recycling and push-pull level converter
Published in 2010 53rd IEEE International Midwest Symposium on Circuits and Systems (01-08-2010)“…An asynchronous charge-recycling (ACR) scheme with a push-pull level converter (PPLC) receiver is proposed. In ACR_PPLC, ACR reduces the dynamic power…”
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Conference Proceeding -
18
Half-and-Half Compare Content Addressable Memory with Charge-Sharing Based Selective Match-Line Precharge Scheme
Published in 2018 IEEE Symposium on VLSI Circuits (01-06-2018)“…In this paper, we present a half-and-half compare contents addressable memory (HHC-CAM) to reduce the dynamic power consumption as well as white space between…”
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Conference Proceeding -
19
Semi-active high-efficient CMOS rectifier for wireless power transmission
Published in 2010 IEEE Radio Frequency Integrated Circuits Symposium (01-01-2010)“…A semi-active high-efficient (SA-HE) CMOS rectifier with reverse leakage control has been developed. It employs a cross-coupled NMOS pair and two leakage…”
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Conference Proceeding -
20
A 3-nm Gate-All-Around SRAM Featuring an Adaptive Dual-Bitline and an Adaptive Cell-Power Assist Circuit
Published in IEEE journal of solid-state circuits (01-01-2022)“…A 256-Mb gate-all-around (GAA) 6T SRAM is implemented in Samsung 3GAE EUV technology. Adaptive dual-bitline (ADBL) and adaptive cell-power (ACP) SRAM assist…”
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