Search Results - "Song, Myeong Ho"
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1
Torsional Vibration Stress and Fatigue Strength Analysis of Marine Propulsion Shafting System Based on Engine Operation Patterns
Published in Journal of marine science and engineering (01-08-2020)“…Modern merchant ships use marine propulsion systems equipped with an ultra-long-stroke diesel engine that directly drives a large slow-turning propeller. Such…”
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2
Self-Excited Torsional Vibration in the Flexible Coupling of a Marine Propulsion Shafting System Employing Cardan Shafts
Published in Journal of marine science and engineering (01-05-2020)“…The reliability of propulsion shafting systems is a major concern for ocean-going vessels because mid-ocean repairs can be time-consuming and spare parts must…”
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3
Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications
Published in Nanomaterials (Basel, Switzerland) (06-12-2022)“…In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~70 nm by the plasma-enhanced chemical vapor deposition (PECVD) method,…”
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4
High Performing Facial Skin Problem Diagnosis with Enhanced Mask R-CNN and Super Resolution GAN
Published in Applied sciences (01-01-2023)“…Facial skin condition is perceived as a vital indicator of the person’s apparent age, perceived beauty, and degree of health. Machine-learning-based software…”
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5
Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory
Published in IEEE electron device letters (01-01-2009)“…A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND flash memory with a proposed architecture is demonstrated for the first time. A DSSB…”
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6
Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried [Formula Omitted] Substrate for Multifunctioning Flash Memory and 1T-DRAM
Published in IEEE transactions on electron devices (01-04-2009)“…A band-offset-based unified-RAM (URAM) cell fabricated on a Si/Si@@d1- y@C@@dy@ substrate is presented for the fusion of a nonvolatile memory (NVM) and a…”
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7
Establishing the True Dynamic Bending Moment of Propeller Shaft Using a Single Bridge of Strain Gauge
Published in Applied sciences (01-09-2022)“…The measurement of shaft bending (whirling) moment can be performed via a telemetry system including strain gauges which can obtain the bending stress. By…”
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8
Electrical and structural properties of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films
Published in Applied physics letters (02-07-2007)“…The authors investigate the electrical and structural properties of high-k Er-silicate film formed by the interfacial reaction between Er and SiO2 films. The…”
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9
A Bulk FinFET Unified-RAM (URAM) Cell for Multifunctioning NVM and Capacitorless 1T-DRAM
Published in IEEE electron device letters (01-06-2008)“…A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An…”
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10
Partially Depleted SONOS FinFET for Unified RAM (URAM)-Unified Function for High-Speed 1T DRAM and Nonvolatile Memory
Published in IEEE electron device letters (01-07-2008)“…Unified random access memory (URAM) is demonstrated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a…”
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11
High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory
Published in IEEE electron device letters (01-03-2009)“…A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor-type flash memory is successfully demonstrated. Compared…”
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12
Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried \hbox\hbox Substrate for Multifunctioning Flash Memory and 1T-DRAM
Published in IEEE transactions on electron devices (01-04-2009)“…A band-offset-based unified-RAM (URAM) cell fabricated on a Si/Si 1-y C y substrate is presented for the fusion of a nonvolatile memory (NVM) and a…”
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13
Performance Improvement of ZnO Based ReRAM with SiCN Oxygen Reservoir
Published in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (07-03-2023)“…In this paper, a new structure of ZnO based ReRAM with SiCN capping layer is suggested as oxygen reservoir to improve the device performances. The fabricated…”
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Conference Proceeding -
14
A Unified-RAM (URAM) Cell for Multi-Functioning Capacitorless DRAM and NVM
Published in 2007 IEEE International Electron Devices Meeting (01-12-2007)“…A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless IT-DRAM and non-volatile memory (NVM). A…”
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Conference Proceeding
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15
High speed Flash Memory and 1T-DRAM on dopant segregated Schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications
Published in 2008 IEEE International Electron Devices Meeting (01-12-2008)“…A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multi functioning in a high speed NAND-type flash memory and…”
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Conference Proceeding -
16
Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices
Published in Applied physics letters (01-02-2010)“…The structural and compositional dependence of gadolinium-aluminum oxide (GdAlO) for application to nonvolatile memory is investigated. An addition of Gd into…”
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17
Mask R-CNN Models to Purify Medical Images of Training Sets
Published in 2021 International Conference on e-Health and Bioengineering (EHB) (18-11-2021)“…Machine learning approach to medical image segmentation becomes more prevalent in radiology. However, the performance of segmentation models is not yet…”
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Conference Proceeding -
18
Electrical and structural properties of high- k Er-silicate gate dielectric formed by interfacial reaction between Er and Si O 2 films
Published in Applied physics letters (03-07-2007)“…The authors investigate the electrical and structural properties of high- k Er-silicate film formed by the interfacial reaction between Er and Si O 2 films…”
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Journal Article -
19
Electrical and structural properties of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO{sub 2} films
Published in Applied physics letters (02-07-2007)“…The authors investigate the electrical and structural properties of high-k Er-silicate film formed by the interfacial reaction between Er and SiO{sub 2} films…”
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Journal Article -
20
High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for @@inor@-type Flash Memory
Published in IEEE electron device letters (01-03-2009)“…A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor- type flash memory is successfully demonstrated…”
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Journal Article