High quality ZnTe heteroepitaxy layers using low-temperature buffer layers

Low dislocation density ZnTe heteroepitaxial layers are achieved by inserting a thin ZnTe buffer layer at low growth temperature (LT-buffer) followed by annealing. The ZnTe heteroepitaxy layer with a LT-buffer shows a narrow line width of X-ray rocking curve as narrow as 42 arcsec in (0 0 4) reflect...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 251; no. 1; pp. 596 - 601
Main Authors:	Chang, Jiho, Godo, Kenji, Song, Junsuk, Oh, Dongcheol, Lee, Changwoo, Yao, Takafumi
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-04-2003 Elsevier
Subjects:	A1. Defect density A3. Heteroepitaxy A3. Molecular beam epitaxy A3. ZnTe thin films Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology 85.60.Jb 81.15. Hi A1. Defect density A3. Heteroepitaxy A3. Molecular beam epitaxy A3. ZnTe thin films 81.05.Zx Buffer layer Inorganic compounds Zinc tellurides Transition element compounds Operating mode Crystal growth from vapors Experimental study Crystal perfection Thin films Dislocation density II-VI semiconductors 81.15. Hi Al. Defect density Molecular beam epitaxy Heterojunctions Thermal annealing Low temperature
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Summary:	Low dislocation density ZnTe heteroepitaxial layers are achieved by inserting a thin ZnTe buffer layer at low growth temperature (LT-buffer) followed by annealing. The ZnTe heteroepitaxy layer with a LT-buffer shows a narrow line width of X-ray rocking curve as narrow as 42 arcsec in (0 0 4) reflection and the dislocation density is estimated as 1.3×10 6 cm −2 . A cross-sectional view of transmission electron microscopy shows high structural quality of ZnTe layer with LT-buffers.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(03)00974-6