Search Results - "Song, In Hyuk"

A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film by Song, In-Hyuk, Kang, Su-Hyuk, Nam, Woo-Jin, Han, Min-Koo

“…A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for…”
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A poly-Si TFT fabricated by excimer laser recrystallization on floating active structure by Kim, Cheon-Hong, Song, In-Hyuk, Nam, Woo-Jin, Han, Min-Koo

“…This letter reports a. new excimer laser annealing (ELA) method to produce large polycrystalline silicon (poly-Si) lateral grains exceeding 4 μm. A selectively…”
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Effect of channel length on the threshold voltage degradation of hydrogenated amorphous silicon TFTs due to the drain bias stress by Shin, Kwang-Sub, Lee, Jae-Hoon, Han, Sang-Myeon, Song, In-Hyuk, Han, Min-Koo

“…The threshold voltage (VT) degradation of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) with various channel lengths of 2–100μm has been…”
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A high resolution Poly-Si TFT–LCD employing analog sample and hold driver by Lim, Kyoung Moon, Lee, KyungEon, Baek, Myoung Kee, Lee, Bu Yeol, Song, In-Hyuk, Yu, Jae-Sung, Lee, Hye-Jin, Jang, Kwang Ho, Park, Yong-In, Yoo, Yong Su, Kang, HoChul, Kim, Chang-Dong, Lee, Deuk Su, Kang, In-Byung

“…In this study, we have developed high performance TFT (thin film transistor) and a 7.4-inch high resolution LCD (liquid crystal display) panel of full color…”
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Low temperature poly-Si TFTs for display application by Song, In-Hyuk, Han, Min-Koo

“…We have fabricated new polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a single grain-boundary by a simple excimer laser annealing (ELA)…”
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Poly-Si thin film transistors fabricated by combining excimer laser annealing and metal induced lateral crystallization by Park, Kee-Chan, Lee, Jae-Hoon, Song, In-Hyuk, Jung, Sang-Hoon, Han, Min-Koo

“…Two μm long polycrystalline silicon (poly-Si) grains were obtained by irradiating a XeCl excimer laser beam on metal induced laterally crystallized (MILC)…”
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Excimer laser recrystallization of selectively floating a-Si thin film by Kim, Cheon-Hong, Song, In-Hyuk, Nam, Woo-Jin, Han, Min-Koo

“…We report a new excimer laser annealing (ELA) method which increases the grain size of poly-Si film considerably by employing a selectively floating a-Si…”
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Recessed gate-data line-crossover structures employing an air-gap to reduce signal delay for TFT-LCD panel by Park, Fin-Woo, Song, In-Hyuk, Lee, Min-Cheol, Han, Min-Koo

“…Two new line-crossover structures entitled "recessed air-bridge structure" and "recessed gate-line structure," which have improved mechanical durability and…”
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Effects of selective Si ion implantation on excimer laser annealing of dehydrogenated a-Si film by Lee, Min-Cheol, Park, Kee-Chan, Song, In-Hyuk, Han, Min-Koo

“…The effects of selective Si + ion implantation on excimer laser annealing (ELA) of PECVD a-Si thin film were investigated. The selective Si + ion implantation…”
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Effect of fine boron powders prepared with a self-propagating high temperature synthesis on flux pinning properties of the MgB2/Fe composite wires by KIM, Young-Kuk, CHUNG, Kookchae, YOO, Jaimoo, SONG, In-Hyuk, KO, Jaewoong, CHUNG, Woo-Hyun, KIM, Dong-Ho, XIOLIN WANG, SHI XUE DOU, SHINE, Pyung-Woo

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Low temperature short channel polycrystalline silicon thin film transistors with high reliability for flat panel display by Park, Joong-Hyun, Song, In-Hyuk, Han, Min-Koo

“…We have investigated a short channel ( L ≤ 1 μm) effect on the electrical reliability of the low temperature poly-Si thin film transistors (TFT) on a glass…”
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P-17: Characteristics of Poly-Si TFTs Employing "Counter-Doped Body Tied Source" for Kink Suppression by Kim, Ji Hoon, Nam, Woo-Jin, Song, In-Hyuk, Park, Jung-Hyun, Han, Min-Koo

“…A new poly‐Si TFTs employing “Counter‐doped Body Tied Source (BTS)” have been proposed and fabricated in order to suppress the kink current. In our experiment,…”
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60.2: Invited Paper: Advanced In-cell Touch Technology for Large Sized Liquid Crystal Displays by Kim, Cheolse, Lee, Deuk Su, Kim, Ju Han, Kim, Hun Bae, Shin, Seung Rok, Jung, Ji Hyun, Song, In Hyuk, Jang, Chul Sang, Kwon, Keuk Sang, Kim, Sung Ho, Kim, Geon Tae, Yoon, Jeong Hwan, Lee, Bu-Yeol, Kim, Byeong Koo, Kang, In-Byeong

“…We propose an advanced in‐cell touch (AIT) sensor integrated on TFT substrate. The proposed touch sensor perceives selfcapacitance formed between touching…”
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P125: The Value of Propella dMRI in Diagnosis of Cholesteatoma by Nam, Sung-Il, Park, Soon-Hyung, Park, Sun-Ho, Nam, Young-Jin, Song, In-Hyuk, Cho, Yu-Mi

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A new poly-Si TFT structure with air cavities at the gate-oxide edges by Lee, Min-Cheol, Jung, Sang-Hoon, Song, In-Hyuk, Han, Min-Koo

“…We propose a new poly-Si TFT structure employing air cavities at the edges of gate oxide in order to reduce the threshold voltage shift after electrical stress…”
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A poly-Si thin film transistor fabricated by new excimer laser recrystallization employing floating active structure by Song, In-Hyuk, Kim, Cheon-Hong, Nam, Woo-Jin, Han, Min-Koo

“…We fabricated a high-performance polycrystalline silicon (poly-Si) thin film transistor (TFT) by new excimer laser annealing (ELA) method employing floating…”
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P-21: Nanocrystalline-Si TFT Fabricated at 150°C Using ICP-CVD by Han, Sang-Myeon, Shin, Moon-Young, Park, Joong-Hyun, Song, In-Hyuk, Han, Min-Koo

“…We have fabricated nanocrystalline Si (nc‐Si) TFTs at 150°C using inductively coupled plasma chemical vapor deposition (ICP‐CVD). A nc‐Si film with large…”
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A poly-Si TFT integrated gate-data line-crossover structure employing an air-gap for large-size AMLCD panel by Park, Jin-Woo, Lee, Min-Cheol, Nam, Woo-Jin, Song, In-Hyuk, Han, Min-Koo

“…We have fabricated a novel poly-Si TFT integrated at the gate-data line-crossover structure without sacrificing the electrical characteristics. The aperture…”
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28.1: High-Mobility Poly-Si TFTs Employing XeCl Excimer Laser Annealing on Selectively Floating a-Si Thin Film by Kim, Cheon-Hong, Song, In-Hyuk, Han, Min-Koo

“…High‐mobility poly‐Si TFTs have been fabricated by a simple ELA method which employs a selectively floating a Si active layer. Large lateral grains exceeding…”
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P‐52: Low Power Method for SPR Pixel Structure Using 2‐Line Interlace Driving by Kim, Hak-Su, Kim, Tae-Hwan, Jeon, Eun-Seok, Song, In-Hyuk, Park, Cheol-Woo, Kim, Byeong-Koo

“…In SPR structure panel, GIP circuit which is different from normal RGB should be applied, and GIP circuit should be designed by referring to the concept…”
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