Search Results - "Son, Su Ji"
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Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts
Published in Physica Status Solidi. B: Basic Solid State Physics (01-05-2015)“…Electrical characteristics of a variety of Schottky contacts formed with ten metal species on the a‐plane of p‐type low‐Mg‐doped GaN grown on r‐plane sapphire…”
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Journal Article -
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Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates
Published in Optics express (04-07-2011)“…We report on orange a-plane light-emitting diodes (LEDs) with InGaN single quantum well (SQW) grown on r-plane sapphire substrates by metal organic chemical…”
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3
Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
Published in Thin solid films (01-11-2013)“…We report on the characteristics of a-plane GaN films directly grown on optimized silicon-dioxide-patterned r-plane sapphire substrates. Various shapes and…”
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4
Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane ( 11\bar0 ) GaN Light-Emitting Diodes on Sapphire Substrate
Published in IEEE photonics technology letters (01-05-2010)“…We report on the effects of basal stacking faults (BSFs) on the electrical anisotropy and the device characteristics of nonpolar a-plane GaN (1120)…”
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5
Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask
Published in Japanese Journal of Applied Physics (04-03-2014)“…The characteristics of nonpolar a-plane () GaN (a-GaN) grown using single and double nanopillar SiO2 masks were investigated. The two nanopillar SiO2 masks…”
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Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching
Published in Optics express (10-02-2014)“…Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched…”
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Effects of Nano- and Microscale SiO2 Masks on the Growth of $a$-Plane GaN Layers on $r$-Plane Sapphire
Published in Jpn J Appl Phys (01-08-2013)“…We report on the combined effects of $a$-plane GaN layers on a nanoscale patterned insulator on an $r$-plane sapphire substrate and epitaxial lateral…”
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8
Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH_3 interrupted etching
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9
Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates
Published in Optics express (07-11-2011)“…We report on the new fabrication method of a-plane InGaN light emitting diodes (LEDs) using the epitaxy on patterned insulator on sapphire substrate (EPISS)…”
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10
Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells
Published in Journal of crystal growth (15-09-2012)“…The structural and optical properties of nonpolar a-plane (11−20) GaN and In0.18GaN0.82/GaN multiple quantum wells (MQWs) grown on TiO2 nanoparticle…”
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Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD
Published in Journal of crystal growth (01-07-2011)“…The optimal conditions of p-type activation for nonpolar a-plane (1 1 –2 0) p-type GaN films on r-plane (1 –1 0 2) sapphire substrates with various off-axis…”
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Journal Article Conference Proceeding -
12
Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions
Published in Solid-state electronics (01-10-2010)“…Characteristics of nonpolar (1 1–2 0) a-plane GaN template on r-plane sapphire substrate and subsequently grown InGaN/GaN quantum well (QW) structures were…”
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13
Cannabidiol mediates epidermal terminal differentiation and redox homeostasis through aryl hydrocarbon receptor (AhR)-dependent signaling
Published in Journal of dermatological science (01-02-2023)“…Cannabidiol, a non-psychoactive phytocannabinoid, has antioxidant and anti-inflammatory activity in keratinocytes. However, the signaling pathway through which…”
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14
Temporal and spatial variations in the proximate composition, amino acid, and mineral content of Pyropia yezoensis
Published in Journal of applied phycology (01-12-2016)“…Temporal and spatial variations in the proximate composition, amino acid content, and mineral content of Pyropia yezoensis were evaluated at Jindo, Haenam, and…”
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Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO 2 mask
Published in Japanese Journal of Applied Physics (01-05-2014)“…The characteristics of nonpolar a -plane ( ) GaN ( a -GaN) grown using single and double nanopillar SiO 2 masks were investigated. The two nanopillar SiO 2…”
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Journal Article -
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Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO sub(2) mask
Published in Japanese Journal of Applied Physics (01-01-2014)“…The characteristics of nonpolar a-plane (1120) GaN (a-GaN) grown using single and double nanopillar SiO sub(2) masks were investigated. The two nanopillar SiO…”
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Journal Article -
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Effects of Nano- and Microscale SiO sub(2) Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire
Published in Japanese Journal of Applied Physics (01-08-2013)“…We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth…”
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Journal Article -
18
Effects of Nano- and Microscale SiO 2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire
Published in Japanese Journal of Applied Physics (01-08-2013)“…We report on the combined effects of a -plane GaN layers on a nanoscale patterned insulator on an r -plane sapphire substrate and epitaxial lateral overgrowth…”
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Journal Article -
19
Optical properties of green light-emitting diodes grown on r-plane sapphire substrates
“…Nonpolar a-plane light emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapour…”
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Conference Proceeding -
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Structural, electrical, and optical characterizations of a-plane InGaN/GaN quantum well structures
Published in 2009 International Semiconductor Device Research Symposium (01-12-2009)“…GaN and related ternary compounds have been widely used for fabrication of light emitting diodes (LEDs) and laser diodes (LDs). Especially, the low-dimensional…”
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Conference Proceeding