Search Results - "Son, Su Ji"

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  1. 1

    Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts by Naganawa, Moe, Aoki, Toshichika, Son, Ji-Su, Amano, Hiroshi, Shiojima, Kenji

    “…Electrical characteristics of a variety of Schottky contacts formed with ten metal species on the a‐plane of p‐type low‐Mg‐doped GaN grown on r‐plane sapphire…”
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    Journal Article
  2. 2

    Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates by Seo, Yong Gon, Baik, Kwang Hyeon, Song, Hooyoung, Son, Ji-Su, Oh, Kyunghwan, Hwang, Sung-Min

    Published in Optics express (04-07-2011)
    “…We report on orange a-plane light-emitting diodes (LEDs) with InGaN single quantum well (SQW) grown on r-plane sapphire substrates by metal organic chemical…”
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    Journal Article
  3. 3

    Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates by Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Baik, Kwang Hyeon, Seo, Yong Gon, Hwang, Sung-Min

    Published in Thin solid films (01-11-2013)
    “…We report on the characteristics of a-plane GaN films directly grown on optimized silicon-dioxide-patterned r-plane sapphire substrates. Various shapes and…”
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    Journal Article Conference Proceeding
  4. 4

    Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane ( 11\bar0 ) GaN Light-Emitting Diodes on Sapphire Substrate by Baik, Kwang Hyeon, Seo, Yong Gon, Hong, Soon-Ku, Lee, Seogwoo, Kim, Jaebum, Son, Ji-Su, Hwang, Sung-Min

    Published in IEEE photonics technology letters (01-05-2010)
    “…We report on the effects of basal stacking faults (BSFs) on the electrical anisotropy and the device characteristics of nonpolar a-plane GaN (1120)…”
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    Journal Article
  5. 5

    Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO2 mask by Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Published in Japanese Journal of Applied Physics (04-03-2014)
    “…The characteristics of nonpolar a-plane () GaN (a-GaN) grown using single and double nanopillar SiO2 masks were investigated. The two nanopillar SiO2 masks…”
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    Journal Article
  6. 6

    Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching by Son, Ji-Su, Honda, Yoshio, Amano, Hiroshi

    Published in Optics express (10-02-2014)
    “…Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched…”
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    Journal Article
  7. 7

    Effects of Nano- and Microscale SiO2 Masks on the Growth of $a$-Plane GaN Layers on $r$-Plane Sapphire by Son, Ji-Su, Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Seo, Yong Gon, Hwang, Sung-Min, Baik, Kwang Hyeon

    Published in Jpn J Appl Phys (01-08-2013)
    “…We report on the combined effects of $a$-plane GaN layers on a nanoscale patterned insulator on an $r$-plane sapphire substrate and epitaxial lateral…”
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    Journal Article
  8. 8
  9. 9

    Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates by Hwang, Sung-Min, Song, Hooyoung, Seo, Yong Gon, Son, Ji-Su, Kim, Jihoon, Baik, Kwang Hyeon

    Published in Optics express (07-11-2011)
    “…We report on the new fabrication method of a-plane InGaN light emitting diodes (LEDs) using the epitaxy on patterned insulator on sapphire substrate (EPISS)…”
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    Journal Article
  10. 10

    Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells by Hoon Kim, Ji, Hwang, Sung-Min, Son, Ji-Su, Hyeon Baik, Kwang, Man Song, Keun, Ho Park, Jung

    Published in Journal of crystal growth (15-09-2012)
    “…The structural and optical properties of nonpolar a-plane (11−20) GaN and In0.18GaN0.82/GaN multiple quantum wells (MQWs) grown on TiO2 nanoparticle…”
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    Journal Article
  11. 11

    Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD by Son, Ji-Su, Hyeon Baik, Kwang, Gon Seo, Yong, Song, Hooyoung, Hoon Kim, Ji, Hwang, Sung-Min, Kim, Tae-Geun

    Published in Journal of crystal growth (01-07-2011)
    “…The optimal conditions of p-type activation for nonpolar a-plane (1 1 –2 0) p-type GaN films on r-plane (1 –1 0 2) sapphire substrates with various off-axis…”
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    Journal Article Conference Proceeding
  12. 12

    Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions by Song, Hooyoung, Kim, Jin Soak, Kim, Eun Kyu, Lee, Sung-Ho, Kim, Jae Bum, Son, Ji-su, Hwang, Sung-Min

    Published in Solid-state electronics (01-10-2010)
    “…Characteristics of nonpolar (1 1–2 0) a-plane GaN template on r-plane sapphire substrate and subsequently grown InGaN/GaN quantum well (QW) structures were…”
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    Journal Article
  13. 13

    Cannabidiol mediates epidermal terminal differentiation and redox homeostasis through aryl hydrocarbon receptor (AhR)-dependent signaling by Jang, Young su, Jeong, Sugyeong, Kim, A.-ram, Mok, Bo Ram, Son, Su Ji, Ryu, Jae-sang, Son, Woo Sung, Yun, Seok Kyun, Kang, Seunghyun, Kim, Hyun Jung, Kim, Dong Hyun, Shin, Jung U.

    Published in Journal of dermatological science (01-02-2023)
    “…Cannabidiol, a non-psychoactive phytocannabinoid, has antioxidant and anti-inflammatory activity in keratinocytes. However, the signaling pathway through which…”
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    Journal Article
  14. 14

    Temporal and spatial variations in the proximate composition, amino acid, and mineral content of Pyropia yezoensis by Jung, Sang Mok, Kang, Seul Gi, Son, Ji Su, Jeon, Jae Hyuk, Lee, Han Joo, Shin, Hyun Woung

    Published in Journal of applied phycology (01-12-2016)
    “…Temporal and spatial variations in the proximate composition, amino acid content, and mineral content of Pyropia yezoensis were evaluated at Jindo, Haenam, and…”
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    Journal Article
  15. 15

    Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO 2 mask by Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Published in Japanese Journal of Applied Physics (01-05-2014)
    “…The characteristics of nonpolar a -plane ( ) GaN ( a -GaN) grown using single and double nanopillar SiO 2 masks were investigated. The two nanopillar SiO 2…”
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    Journal Article
  16. 16

    Characterization of nonpolar a-plane InGaN/GaN multiple quantum well using double nanopillar SiO sub(2) mask by Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

    Published in Japanese Journal of Applied Physics (01-01-2014)
    “…The characteristics of nonpolar a-plane (1120) GaN (a-GaN) grown using single and double nanopillar SiO sub(2) masks were investigated. The two nanopillar SiO…”
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    Journal Article
  17. 17

    Effects of Nano- and Microscale SiO sub(2) Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire by Son, Ji-Su, Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Seo, Yong Gon, Hwang, Sung-Min, Baik, Kwang Hyeon

    Published in Japanese Journal of Applied Physics (01-08-2013)
    “…We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth…”
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    Journal Article
  18. 18

    Effects of Nano- and Microscale SiO 2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire by Son, Ji-Su, Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Seo, Yong Gon, Hwang, Sung-Min, Baik, Kwang Hyeon

    Published in Japanese Journal of Applied Physics (01-08-2013)
    “…We report on the combined effects of a -plane GaN layers on a nanoscale patterned insulator on an r -plane sapphire substrate and epitaxial lateral overgrowth…”
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    Journal Article
  19. 19
  20. 20

    Structural, electrical, and optical characterizations of a-plane InGaN/GaN quantum well structures by Hooyoung Song, Jin Soak Kim, Eun Kyu Kim, Sung-Ho Lee, Jae Bum Kim, Ji-Su Son, Sung-Min Hwang

    “…GaN and related ternary compounds have been widely used for fabrication of light emitting diodes (LEDs) and laser diodes (LDs). Especially, the low-dimensional…”
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    Conference Proceeding