Search Results - "Son, Nguyen Tien"

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence by Babin, Charles, Stöhr, Rainer, Morioka, Naoya, Linkewitz, Tobias, Steidl, Timo, Wörnle, Raphael, Liu, Di, Hesselmeier, Erik, Vorobyov, Vadim, Denisenko, Andrej, Hentschel, Mario, Gobert, Christian, Berwian, Patrick, Astakhov, Georgy V., Knolle, Wolfgang, Majety, Sridhar, Saha, Pranta, Radulaski, Marina, Son, Nguyen Tien, Ul-Hassan, Jawad, Kaiser, Florian, Wrachtrup, Jörg

“…Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing compatible with nanofabrication…”
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Electron paramagnetic resonance and theoretical study of gallium vacancy in β-Ga2O3 by Son, Nguyen Tien, Ho, Quoc Duy, Goto, Ken, Abe, Hiroshi, Ohshima, Takeshi, Monemar, Bo, Kumagai, Yoshinao, Frauenheim, Thomas, Deák, Peter

“…Unintentionally doped n-type β-Ga2O3 becomes highly resistive after annealing at high temperatures in oxygen ambient. The annealing process also induces an…”
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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide by Nagy, Roland, Niethammer, Matthias, Widmann, Matthias, Chen, Yu-Chen, Udvarhelyi, Péter, Bonato, Cristian, Hassan, Jawad Ul, Karhu, Robin, Ivanov, Ivan G., Son, Nguyen Tien, Maze, Jeronimo R., Ohshima, Takeshi, Soykal, Öney O., Gali, Ádám, Lee, Sang-Yun, Kaiser, Florian, Wrachtrup, Jörg

“…Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a…”
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Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide by Morioka, Naoya, Babin, Charles, Nagy, Roland, Gediz, Izel, Hesselmeier, Erik, Liu, Di, Joliffe, Matthew, Niethammer, Matthias, Dasari, Durga, Vorobyov, Vadim, Kolesov, Roman, Stöhr, Rainer, Ul-Hassan, Jawad, Son, Nguyen Tien, Ohshima, Takeshi, Udvarhelyi, Péter, Thiering, Gergő, Gali, Adam, Wrachtrup, Jörg, Kaiser, Florian

“…Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and…”
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Coherent control of single spins in silicon carbide at room temperature by Widmann, Matthias, Lee, Sang-Yun, Rendler, Torsten, Son, Nguyen Tien, Fedder, Helmut, Paik, Seoyoung, Yang, Li-Ping, Zhao, Nan, Yang, Sen, Booker, Ian, Denisenko, Andrej, Jamali, Mohammad, Momenzadeh, S. Ali, Gerhardt, Ilja, Ohshima, Takeshi, Gali, Adam, Janzén, Erik, Wrachtrup, Jörg

“…Defects in silicon carbide have recently been proposed as bright single-photon sources. It is now shown that they can be used as sources of single electron…”
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Bright single photon sources in lateral silicon carbide light emitting diodes by Widmann, Matthias, Niethammer, Matthias, Makino, Takahiro, Rendler, Torsten, Lasse, Stefan, Ohshima, Takeshi, Ul Hassan, Jawad, Tien Son, Nguyen, Lee, Sang-Yun, Wrachtrup, Jörg

“…Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They…”
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Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions by Niethammer, Matthias, Widmann, Matthias, Rendler, Torsten, Morioka, Naoya, Chen, Yu-Chen, Stöhr, Rainer, Hassan, Jawad Ul, Onoda, Shinobu, Ohshima, Takeshi, Lee, Sang-Yun, Mukherjee, Amlan, Isoya, Junichi, Son, Nguyen Tien, Wrachtrup, Jörg

“…Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap…”
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Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC by Son, Nguyen Tien, Stenberg, Pontus, Jokubavicius, Valdas, Abe, Hiroshi, Ohshima, Takeshi, Ul Hassan, Jawad, Ivanov, Ivan G.

“…The carbon antisite-vacancy pair (CSiVC) in silicon carbide (SiC) has recently emerged as a promising defect for applications in quantum communication. In the…”
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Narrow inhomogeneous distribution of spin-active emitters in silicon carbide by Nagy, Roland, Dasari, Durga Bhaktavatsala Rao, Babin, Charles, Liu, Di, Vorobyov, Vadim, Niethammer, Matthias, Widmann, Matthias, Linkewitz, Tobias, Gediz, Izel, Stöhr, Rainer, Weber, Heiko B., Ohshima, Takeshi, Ghezellou, Misagh, Son, Nguyen Tien, Ul-Hassan, Jawad, Kaiser, Florian, Wrachtrup, Jörg

“…Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication, and sensing. Realizing scalability…”
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Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device by Widmann, Matthias, Niethammer, Matthias, Fedyanin, Dmitry Yu, Khramtsov, Igor A, Rendler, Torsten, Booker, Ian D, Ul Hassan, Jawad, Morioka, Naoya, Chen, Yu-Chen, Ivanov, Ivan G, Son, Nguyen Tien, Ohshima, Takeshi, Bockstedte, Michel, Gali, Adam, Bonato, Cristian, Lee, Sang-Yun, Wrachtrup, Jörg

“…Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge…”
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Stabilization of point-defect spin qubits by quantum wells by Ivády, Viktor, Davidsson, Joel, Delegan, Nazar, Falk, Abram L., Klimov, Paul V., Whiteley, Samuel J., Hruszkewycz, Stephan O., Holt, Martin V., Heremans, F. Joseph, Son, Nguyen Tien, Awschalom, David D., Abrikosov, Igor A., Gali, Adam

“…Defect-based quantum systems in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are…”
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Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide by Cilibrizzi, Pasquale, Arshad, Muhammad Junaid, Tissot, Benedikt, Son, Nguyen Tien, Ivanov, Ivan G., Astner, Thomas, Koller, Philipp, Ghezellou, Misagh, Ul-Hassan, Jawad, White, Daniel, Bekker, Christiaan, Burkard, Guido, Trupke, Michael, Bonato, Cristian

“…Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in…”
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Spectrally reconfigurable quantum emitters enabled by optimized fast modulation by Lukin, Daniil M., White, Alexander D., Trivedi, Rahul, Guidry, Melissa A., Morioka, Naoya, Babin, Charles, Soykal, Öney O., Ul-Hassan, Jawad, Son, Nguyen Tien, Ohshima, Takeshi, Vasireddy, Praful K., Nasr, Mamdouh H., Sun, Shuo, MacLean, Jean-Philippe W., Dory, Constantin, Nanni, Emilio A., Wrachtrup, Jörg, Kaiser, Florian, Vučković, Jelena

“…The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in…”
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Investigation on origin of Z{sub 1/2} center in SiC by deep level transient spectroscopy and electron paramagnetic resonance by Kawahara, Koutarou, Suda, Jun, Kimoto, Tsunenobu, Thang Trinh, Xuan, Tien Son, Nguyen, Janzen, Erik

“…The Z{sub 1/2} center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage…”
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Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance by Kawahara, Koutarou, Thang Trinh, Xuan, Tien Son, Nguyen, Janzén, Erik, Suda, Jun, Kimoto, Tsunenobu

“…The Z1/2 center in n-type 4H-SiC epilayers—a dominant deep level limiting the carrier lifetime—has been investigated. Using capacitance versus voltage (C-V)…”
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Stable and metastable Si negative-U centers in AlGaN and AlN by Trinh, Xuan Thang, Nilsson, Daniel, Ivanov, Ivan G., Janzén, Erik, Kakanakova-Georgieva, Anelia, Son, Nguyen Tien

“…Electron paramagnetic resonance studies of Si-doped AlxGa1−xN (0.79 ≤ x ≤ 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x…”
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Exciton luminescence in AlN triggered by hydrogen and thermal annealing by Feneberg, Martin, Son, Nguyen Tien, Kakanakova-Georgieva, Anelia

“…Exciton recombination bands in homoepitaxial AlN layers are strongly dependent on the presence of hydrogen. By thermal treatment under hydrogen-free and…”
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Author Correction: Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide by Morioka, Naoya, Babin, Charles, Nagy, Roland, Gediz, Izel, Hesselmeier, Erik, Liu, Di, Joliffe, Matthew, Niethammer, Matthias, Dasari, Durga, Vorobyov, Vadim, Kolesov, Roman, Stöhr, Rainer, Ul-Hassan, Jawad, Son, Nguyen Tien, Ohshima, Takeshi, Udvarhelyi, Péter, Thiering, Gergő, Gali, Adam, Wrachtrup, Jörg, Kaiser, Florian

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Agent-Based Modeling of Rumor Propagation Using Expected Integrated Mean Squared Error Optimal Design by Tseng, Shih-Hsien, Son Nguyen, Tien

“…In the “Age of the Internet”, fake news and rumor-mongering have emerged as some of the most critical factors that affect our online social lives. For example,…”
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The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics by Liu, Di, Kaiser, Florian, Bushmakin, Vladislav, Hesselmeier, Erik, Steidl, Timo, Ohshima, Takeshi, Son, Nguyen Tien, Ul-Hassan, Jawad, Soykal, Öney O., Wrachtrup, Jörg

“…The negatively charged silicon vacancy center ( V Si − ) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing,…”
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