Search Results - "Son, Bongkwon"
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Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain
Published in Applied physics letters (16-05-2022)“…GeSn alloys are a promising emerging complementary metal–oxide–semiconductor compatible technology for applications in photonics and electronics. However, the…”
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Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications
Published in IEEE photonics journal (01-06-2022)“…In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge 0.91 Sn 0.09 -on-insulator (GeSnOI) platform. The responsivity was 0.24…”
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3
Tunable single-photon emitters in 2D materials
Published in Nanophotonics (Berlin, Germany) (27-08-2024)“…Single-photon emitters (SPEs) hold the key to many quantum technologies including quantum computing. In particular, developing a scalable array of identical…”
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Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications
Published in Micromachines (Basel) (21-08-2020)“…Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of…”
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5
Monolithic Germanium-Tin Pedestal Waveguide for Mid-Infrared Applications
Published in IEEE photonics journal (01-04-2021)“…Germanium-tin (GeSn) is a CMOS-compatible group-IV material. Its growth, however, is plagued by the tendency of Sn segregation and the generation of defects…”
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High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering
Published in Advanced science (01-06-2023)“…The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key to the realization of scalable…”
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Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth
Published in Optics express (01-02-2021)“…Germanium (Ge)-based photodetectors have become one of the mainstream components in photonic-integrated circuits (PICs). Many emerging PIC applications require…”
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High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Published in Optics express (03-08-2020)Get full text
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9
Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platform
Published in Optics express (14-02-2022)“…Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low…”
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Insights into the Origins of Guided Microtrenches and Microholes/rings from Sn Segregation in Germanium–Tin Epilayers
Published in Journal of physical chemistry. C (17-09-2020)“…We demonstrate the self-assembly synthesis of millimeter-long guided trenches and microholes/rings in the supersaturated GeSn epilayers through two approaches:…”
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11
Efficient Avalanche Photodiodes with a WSe2/MoS2 Heterostructure via Two-Photon Absorption
Published in Nano letters (14-12-2022)“…Two-dimensional (2D) materials-based photodetectors in the infrared range hold the key to enabling a wide range of optoelectronics applications including…”
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12
Wafer-scale growth of 2D SnSx hybrid films on germanium by atomic layer deposition for broadband photodetection
Published in Applied surface science (30-11-2024)“…[Display omitted] •Achieved wafer-scale growth of 2D SnSx hybrid films on 2-inch Ge substrates using atomic layer deposition (ALD) followed by thermal…”
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Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improved responsivity and specific detectivity at 1,550 nm
Published in Optics express (24-05-2021)“…Gourd-shaped hole array germanium (Ge) vertical p-i-n photodiodes were designed and demonstrated on a germanium-on-insulator (GOI) substrate with the excellent…”
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14
Sub-mA/cm2 Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate
Published in IEEE transactions on electron devices (01-04-2021)“…In recent years, Germanium (Ge) photodiodes have established a widespread utilization in photonic-integrated circuits (PICs). However, the devices commonly…”
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15
Sub-mA/cm 2 Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate
Published in IEEE transactions on electron devices (01-04-2021)Get full text
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16
High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy
Published in ACS nano (25-05-2021)“…Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface have gained prominence as high sensitivity…”
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17
Direct Chemisorption-Assisted Nanotransfer Printing with Wafer-Scale Uniformity and Controllability
Published in ACS nano (25-01-2022)“…Nanotransfer printing techniques have attracted significant attention due to their outstanding simplicity, cost-effectiveness, and high throughput. However,…”
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18
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeO x surface passivation
Published in Optics express (03-08-2020)“…Germanium (Ge) vertical p-i-n photodetectors were demonstrated with an ultra-low dark current of 0.57 mA/cm 2 at −1 V. A germanium-on-insulator (GOI) platform…”
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19
Efficient Avalanche Photodiodes with a WSe 2 /MoS 2 Heterostructure via Two-Photon Absorption
Published in Nano letters (14-12-2022)“…Two-dimensional (2D) materials-based photodetectors in the infrared range hold the key to enabling a wide range of optoelectronics applications including…”
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20
Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors
Published in Optics express (03-08-2020)“…The germanium-on-insulator (GOI) has recently emerged as a new platform for complementary metal-oxide-semiconductor (CMOS)-compatible photonic integrated…”
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