Search Results - "Son, Bongkwon"

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  1. 1

    Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain by Burt, Daniel, Joo, Hyo-Jun, Kim, Youngmin, Jung, Yongduck, Chen, Melvina, Luo, Manlin, Kang, Dong-Ho, Assali, Simone, Zhang, Lin, Son, Bongkwon, Fan, Weijun, Moutanabbir, Oussama, Ikonic, Zoran, Tan, Chuan Seng, Huang, Yi-Chiau, Nam, Donguk

    Published in Applied physics letters (16-05-2022)
    “…GeSn alloys are a promising emerging complementary metal–oxide–semiconductor compatible technology for applications in photonics and electronics. However, the…”
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  2. 2

    Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications by Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Margetis, Joe, Kohen, David, Tolle, John, Tan, Chuan Seng

    Published in IEEE photonics journal (01-06-2022)
    “…In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge 0.91 Sn 0.09 -on-insulator (GeSnOI) platform. The responsivity was 0.24…”
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  3. 3

    Tunable single-photon emitters in 2D materials by Yu, Yi, Seo, In Cheol, Luo, Manlin, Lu, Kunze, Son, Bongkwon, Tan, Jian Kwang, Nam, Donguk

    Published in Nanophotonics (Berlin, Germany) (27-08-2024)
    “…Single-photon emitters (SPEs) hold the key to many quantum technologies including quantum computing. In particular, developing a scalable array of identical…”
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  4. 4

    Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications by Ghosh, Soumava, Lin, Kuan-Chih, Tsai, Cheng-Hsun, Kumar, Harshvardhan, Chen, Qimiao, Zhang, Lin, Son, Bongkwon, Tan, Chuan Seng, Kim, Munho, Mukhopadhyay, Bratati, Chang, Guo-En

    Published in Micromachines (Basel) (21-08-2020)
    “…Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of…”
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  5. 5

    Monolithic Germanium-Tin Pedestal Waveguide for Mid-Infrared Applications by Goh, Simon Chun Kiat, Shiau, Li Lynn, Zhang, Lin, Son, Bongkwon, Chen, Qimiao, Zhong, Jian, Teddy, Salim, Tan, Chuan Seng

    Published in IEEE photonics journal (01-04-2021)
    “…Germanium-tin (GeSn) is a CMOS-compatible group-IV material. Its growth, however, is plagued by the tendency of Sn segregation and the generation of defects…”
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  6. 6

    High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering by Kim, Youngmin, Joo, Hyo‐Jun, Chen, Melvina, Son, Bongkwon, Burt, Daniel, Shi, Xuncheng, Zhang, Lin, Ikonic, Zoran, Tan, Chuan Seng, Nam, Donguk

    Published in Advanced science (01-06-2023)
    “…The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key to the realization of scalable…”
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  7. 7

    Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth by Lin, Yiding, Lee, Kwang Hong, Son, Bongkwon, Tan, Chuan Seng

    Published in Optics express (01-02-2021)
    “…Germanium (Ge)-based photodetectors have become one of the mainstream components in photonic-integrated circuits (PICs). Many emerging PIC applications require…”
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  8. 8
  9. 9

    Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platform by Zhou, Hao, Chen, Qimiao, Wu, Shaoteng, Zhang, Lin, Guo, Xin, Son, Bongkwon, Tan, Chuan Seng

    Published in Optics express (14-02-2022)
    “…Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low…”
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  10. 10

    Insights into the Origins of Guided Microtrenches and Microholes/rings from Sn Segregation in Germanium–Tin Epilayers by Wu, Shaoteng, Zhang, Lin, Son, Bongkwon, Chen, Qimiao, Zhou, Hao, Tan, Chuan Seng

    Published in Journal of physical chemistry. C (17-09-2020)
    “…We demonstrate the self-assembly synthesis of millimeter-long guided trenches and microholes/rings in the supersaturated GeSn epilayers through two approaches:…”
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  11. 11

    Efficient Avalanche Photodiodes with a WSe2/MoS2 Heterostructure via Two-Photon Absorption by Son, Bongkwon, Wang, Yadong, Luo, Manlin, Lu, Kunze, Kim, Youngmin, Joo, Hyo-Jun, Yi, Yu, Wang, Chongwu, Wang, Qi Jie, Chae, Sang Hoon, Nam, Donguk

    Published in Nano letters (14-12-2022)
    “…Two-dimensional (2D) materials-based photodetectors in the infrared range hold the key to enabling a wide range of optoelectronics applications including…”
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  12. 12

    Wafer-scale growth of 2D SnSx hybrid films on germanium by atomic layer deposition for broadband photodetection by Choi, Yeonsik, Son, Bongkwon, Chen, Qimiao, Lu, Kunze, Nam, Donguk, Lee, Sang Yeon, Tan, Chuan Seng, Lee, Jung-Yong, Jeon, Hyeongtag

    Published in Applied surface science (30-11-2024)
    “…[Display omitted] •Achieved wafer-scale growth of 2D SnSx hybrid films on 2-inch Ge substrates using atomic layer deposition (ALD) followed by thermal…”
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  13. 13

    Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improved responsivity and specific detectivity at 1,550 nm by Son, Bongkwon, Zhou, Hao, Lin, Yiding, Lee, Kwang Hong, Tan, Chuan Seng

    Published in Optics express (24-05-2021)
    “…Gourd-shaped hole array germanium (Ge) vertical p-i-n photodiodes were designed and demonstrated on a germanium-on-insulator (GOI) substrate with the excellent…”
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  14. 14

    Sub-mA/cm2 Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate by Lin, Yiding, Son, Bongkwon, Lee, Kwang Hong, Michel, Jurgen, Tan, Chuan Seng

    Published in IEEE transactions on electron devices (01-04-2021)
    “…In recent years, Germanium (Ge) photodiodes have established a widespread utilization in photonic-integrated circuits (PICs). However, the devices commonly…”
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  16. 16

    High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy by Zhang, Yi-Yu, Zheng, Yi-Xiong, Lai, Jun-Yu, Seo, Jung-Hun, Lee, Kwang Hong, Tan, Chuan Seng, An, Shu, Shin, Sang-Ho, Son, Bongkwon, Kim, Munho

    Published in ACS nano (25-05-2021)
    “…Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface have gained prominence as high sensitivity…”
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  17. 17

    Direct Chemisorption-Assisted Nanotransfer Printing with Wafer-Scale Uniformity and Controllability by Zhao, Zhi-Jun, Shin, Sang-Ho, Lee, Sang Yeon, Son, Bongkwon, Liao, Yikai, Hwang, Soonhyoung, Jeon, Sohee, Kang, Hyeokjoong, Kim, Munho, Jeong, Jun-Ho

    Published in ACS nano (25-01-2022)
    “…Nanotransfer printing techniques have attracted significant attention due to their outstanding simplicity, cost-effectiveness, and high throughput. However,…”
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  18. 18

    High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeO x surface passivation by Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Wang, Yue, Wu, Shaoteng, Tan, Chuan Seng

    Published in Optics express (03-08-2020)
    “…Germanium (Ge) vertical p-i-n photodetectors were demonstrated with an ultra-low dark current of 0.57 mA/cm 2 at −1 V. A germanium-on-insulator (GOI) platform…”
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  19. 19

    Efficient Avalanche Photodiodes with a WSe 2 /MoS 2 Heterostructure via Two-Photon Absorption by Son, Bongkwon, Wang, Yadong, Luo, Manlin, Lu, Kunze, Kim, Youngmin, Joo, Hyo-Jun, Yi, Yu, Wang, Chongwu, Wang, Qi Jie, Chae, Sang Hoon, Nam, Donguk

    Published in Nano letters (14-12-2022)
    “…Two-dimensional (2D) materials-based photodetectors in the infrared range hold the key to enabling a wide range of optoelectronics applications including…”
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    Journal Article
  20. 20

    Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors by Ghosh, Soumava, Lin, Kuan-Chih, Tsai, Cheng-Hsun, Lee, Kwang Hong, Chen, Qimiao, Son, Bongkwon, Mukhopadhyay, Bratati, Tan, Chuan Seng, Chang, Guo-En

    Published in Optics express (03-08-2020)
    “…The germanium-on-insulator (GOI) has recently emerged as a new platform for complementary metal-oxide-semiconductor (CMOS)-compatible photonic integrated…”
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