Search Results - "Somphonsane, R."

Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation by He, G, Ghosh, K, Singisetti, U, Ramamoorthy, H, Somphonsane, R, Bohra, G, Matsunaga, M, Higuchi, A, Aoki, N, Najmaei, S, Gong, Y, Zhang, X, Vajtai, R, Ajayan, P. M, Bird, J. P

“…We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (V…”
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Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors by He, G, Ramamoorthy, H, Kwan, C.-P, Lee, Y.-H, Nathawat, J, Somphonsane, R, Matsunaga, M, Higuchi, A, Yamanaka, T, Aoki, N, Gong, Y, Zhang, X, Vajtai, R, Ajayan, P. M, Bird, J. P

“…We demonstrate a novel form of thermally-assisted hysteresis in the transfer curves of monolayer MoS2 FETs, characterized by the appearance of a large…”
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“Freeing” Graphene from Its Substrate: Observing Intrinsic Velocity Saturation with Rapid Electrical Pulsing by Ramamoorthy, H, Somphonsane, R, Radice, J, He, G, Kwan, C.-P, Bird, J. P

“…Rapid (nanosecond-scale) electrical pulsing is used to study drift-velocity saturation in graphene field-effect devices. In these experiments, high-field…”
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Fast Energy Relaxation of Hot Carriers Near the Dirac Point of Graphene by Somphonsane, R, Ramamoorthy, H, Bohra, G, He, G, Ferry, D. K, Ochiai, Y, Aoki, N, Bird, J. P

“…We investigate energy relaxation of hot carriers in monolayer and bilayer graphene devices, demonstrating that the relaxation rate increases significantly as…”
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Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence by Somphonsane, R., Ramamoorthy, H., He, G., Nathawat, J., Yin, S., Kwan, C.-P., Arabchigavkani, N., Barut, B., Zhao, M., Jin, Z., Fransson, J., Bird, J. P.

“…The differential conductance of graphene is shown to exhibit a zero-bias anomaly at low temperatures, arising from a suppression of the quantum corrections due…”
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Nonergodicity and microscopic symmetry breaking of the conductance fluctuations in disordered mesoscopic graphene by Bohra, G., Somphonsane, R., Aoki, N., Ochiai, Y., Akis, R., Ferry, D. K., Bird, J. P.

“…We show a dramatic deviation from ergodicity for the conductance fluctuations in graphene. In marked contrast to the ergodicity of dirty metals, fluctuations…”
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Plasmon-mediated energy relaxation in graphene by Ferry, D. K., Somphonsane, R., Ramamoorthy, H., Bird, J. P.

“…Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for…”
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Evaluating the Sources of Graphene’s Resistivity Using Differential Conductance by Somphonsane, R., Ramamoorthy, H., He, G., Nathawat, J., Kwan, C.-P., Arabchigavkani, N., Lee, Y.-H., Fransson, J., Bird, J. P.

“…We explore the contributions to the electrical resistance of monolayer and bilayer graphene, revealing transitions between different regimes of charge carrier…”
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Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene by Arabchigavkani, N, Somphonsane, R, Ramamoorthy, H, He, G, Nathawat, J, Yin, S, Barut, B, He, K, Randle, M D, Dixit, R, Sakanashi, K, Aoki, N, Zhang, K, Wang, L, Mei, W-N, Dowben, P A, Fransson, J, Bird, J P

“…Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of…”
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Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs by He, G., Nathawat, J., Kwan, C.-P., Ramamoorthy, H., Somphonsane, R., Zhao, M., Ghosh, K., Singisetti, U., Perea-López, N., Zhou, C., Elías, A. L., Terrones, M., Gong, Y., Zhang, X., Vajtai, R., Ajayan, P. M., Ferry, D. K., Bird, J. P.

“…The high field phenomena of inter-valley transfer and avalanching breakdown have long been exploited in devices based on conventional semiconductors. In this…”
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Robust mesoscopic fluctuations in disordered graphene by Bohra, G, Somphonsane, R, Ferry, D K, Bird, J P

“…The temperature dependence of the mesoscopic conductance fluctuations is investigated for disordered graphene. The fluctuations are generated by varying either…”
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Reversing hot-carrier energy-relaxation in graphene with a magnetic field by Ramamoorthy, H., Somphonsane, R., He, G., Ferry, D. K., Ochiai, Y., Aoki, N., Bird, J. P.

“…We investigate the influence of a perpendicular magnetic field on hot-carrier energy relaxation in bilayer graphene. Working in the regime of incipient Landau…”
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Correction to “Freeing” Graphene from Its Substrate: Observing Intrinsic Velocity Saturation with Rapid Electrical Pulsing by Ramamoorthy, H, Somphonsane, R, Radice, J, He, G, Kwan, C.-P, Bird, J. P

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Thermally Assisted Nonvolatile Memory in Monolayer MoS 2 Transistors by He, G, Ramamoorthy, H, Kwan, C-P, Lee, Y-H, Nathawat, J, Somphonsane, R, Matsunaga, M, Higuchi, A, Yamanaka, T, Aoki, N, Gong, Y, Zhang, X, Vajtai, R, Ajayan, P M, Bird, J P

“…We demonstrate a novel form of thermally-assisted hysteresis in the transfer curves of monolayer MoS FETs, characterized by the appearance of a large…”
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Energy relaxation of hot carriers in graphene via plasmon interactions by Ferry, D. K., Somphonsane, R., Ramamoorthy, H., Bird, J. P.

“…Energy relaxation of hot carriers in graphene is studied theoretically and experimentally at low temperatures, where the loss rate may differ significantly…”
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Robust mesoscopic fluctuations in disordered graphene by Bohra, G., Somphonsane, R., Ferry, D. K., Bird, J. P.

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Plasmon-mediated energy relaxation in graphene by Ferry, D. K., Somphonsane, R., Ramamoorthy, H., Bird, J. P.

“…Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for…”
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Conduction Mechanisms in CVD-Grown Monolayer MoS 2 Transistors: From Variable-Range Hopping to Velocity Saturation by He, G., Ghosh, K., Singisetti, U., Ramamoorthy, H., Somphonsane, R., Bohra, G., Matsunaga, M., Higuchi, A., Aoki, N., Najmaei, S., Gong, Y., Zhang, X., Vajtai, R., Ajayan, P. M., Bird, J. P.

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Conduction Mechanisms in CVD-Grown Monolayer MoS sub(2) Transistors: From Variable-Range Hopping to Velocity Saturation by He, G, Ghosh, K, Singisetti, U, Ramamoorthy, H, Somphonsane, R, Bohra, G, Matsunaga, M, Higuchi, A, Aoki, N, Najmaei, S, Gong, Y, Zhang, X, Vajtai, R, Ajayan, P M, Bird, J P

“…We fabricate transistors from chemical vapor deposition-grown monolayer MoS sub(2) crystals and demonstrate excellent current saturation at large drain…”
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Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene by Arabchigavkani, N, Somphonsane, R, Ramamoorthy, H, He, G, Nathawat, J, Yin, S, Barut, B, He, K, Randle, M. D, Dixit, R, Sakanashi, K, Aoki, N, Zhang, K, Wang, L, Mei, W. -N, Dowben, P. A, Fransson, J, Bird, J. P

“…Phys. Rev. Lett. 126, 086802 (2021) Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting…”
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