Search Results - "Soldatenkov, F. Yu"

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  1. 1

    Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs by Sobolev, M. M., Soldatenkov, F. Yu

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2024)
    “…— High-voltage gradual p 0 – i – n 0 junctions of Al x Ga 1 – x As 1 – y Sb y with x ~ 0.24 and y ~ 0.05 in the i ‑region were studied using…”
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    Journal Article
  2. 2

    Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere by Sobolev, M. M., Soldatenkov, F. Yu

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2022)
    “…We present the results of experimental studies of the capacitance–voltage ( C–V ) characteristics and the spectra of deep-level transient spectroscopy (DLTS)…”
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  3. 3

    Forming Regimes of Pd/Ge/Au Contact System to n-GaAs Influence on Its Electric Parameters by Malevskaya, A. V., Soldatenkov, F. Yu, Levin, R. V., Potapovich, N. S.

    Published in Technical physics letters (01-12-2023)
    “…The investigations of Pd/Ge/Au contact system forming regimes influence on the specific contact resistivity to n -type conductivity GaAs layer were carried…”
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  4. 4

    Deep-Level Transient Spectroscopy of Defects in AlGaAsSb/GaAs p–i–n Heterostructures by Soldatenkov, F. Yu, Sobolev, M. M., Vlasov, A. S., Rozhkov, A. V.

    “…The study investigates high-voltage gradual p 0 – i – n 0 junctions in solid solutions of Al x Ga 1 –  x As 1 –  y Sb y with y up to 15%, which are capable of…”
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  5. 5

    Manifestation of Dipole-Dipole and Quadrupole Interactions in the Correlator Spectrum of Optically Cooled Nuclear Spins of a Bulk n-Gaas Sample by Litvyak, V. M., Cherbunin, R. V., Soldatenkov, F. Yu, Kalevich, V. K., Kavokin, K. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2023)
    “…In this work, we measured the correlator spectrum of optically cooled nuclear spin system of a bulk n -GaAs crystal in a zero magnetic field. The resulting…”
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  6. 6

    Front Contact to the GaSb-Photovoltaic Converter: Properties and Thermal Stability by Sorokina, S. V., Soldatenkov, F. Yu, Potapovich, N. S., Khvostikov, V. P.

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2023)
    “…issues related to the thermal stability of front contacts, based on Cr–Au and Cr–Au–Ag–Au, to GaSb-based photovoltaic cells have been considered at the…”
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  7. 7

    Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Alekseev, P. A., Soldatenkov, F. Yu, Nashchekin, A. V., Khakhulin, S. A., Komkov, O. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2024)
    “…Using high-temperature annealing of thin gold nanofilms deposited onto the (001) surface of doped p -GaAs crystal with an ultrathin oxide layer, the…”
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  8. 8

    Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers by Sobolev, M. M., Soldatenkov, F. Yu

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2018)
    “…The results of an experimental study of the capacitance–voltage ( C – V ) characteristics and deep-level transient spectroscopy (DLTS) spectra of p + – p 0 – i…”
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    Journal Article
  9. 9

    Plasmon Spectroscopy of Anisotropic Gold Nanoclusters on GaAs(001) Surface Passivated by Sulphur Atoms by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Alekseev, P. A., Soldatenkov, F. Yu, Levitskii, V. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-07-2023)
    “…This work demonstrates how to create the structures Au/GaAs with perfect on-surface gold nanoclusters. In doing so, used is covering the GaAs substrate with…”
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  10. 10

    Effect of Chemical Passivation of GaAs(001) Surface on Anisotropy and Orientation of Gold Nanoclusters Formed on It and Their Plasmons by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Alekseev, P. A., Soldatenkov, F. Yu, Levitskii, V. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2023)
    “…The principal role of chemical passivation of GaAs surface in the formation on it of oriented anisotropic nanoclusters of gold is discussed. The nanoclusters…”
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  11. 11

    Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism by Ulin, V. P., Ulin, N. V., Soldatenkov, F. Yu

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2017)
    “…The interaction of heavily doped p - and n -type Si crystals with hydrofluoric acid in the dark with and without contact with metals having greatly differing…”
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  12. 12

    A Study of Ohmic Contacts of Power Photovoltaic Converters by Malevskaya, A. V., Khvostikov, V. P., Soldatenkov, F. Yu, Khvostikova, O. A., Vlasov, A. S., Andreev, V. M.

    Published in Technical physics letters (01-12-2018)
    “…Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level…”
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  13. 13

    Gold Nanoclusters at the Interface Au/GaAs(001): Preparation, Characterization, and Plasmonic Spectroscopy by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Soldatenkov, F. Yu, Makarenko, I. V., Levitskii, V. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)
    “…Local plasmons of gold nanoclusters formed at Au/GaAs interface are observed and investigated. The gold nanoclusters are prepared by thermal annealing of thin…”
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  14. 14

    Control over carrier lifetime in high-voltage p-i-n diodes based on InxGa1-xAs/GaAs heterostructures by Yu, Soldatenkov F, Danil’chenko V G, Korol’kov V I

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2007)
    “…The possibility of controlling the effective lifetime of nonequilibrium carriers by varying the lattice mismatch between the interfaced materials of a…”
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  15. 15

    Current flow mechanism in ohmic contact to n-4H-SiC by Blank, T. V., Goldberg, Yu. A., Posse, E. A., Soldatenkov, F. Yu

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2010)
    “…Current flow in an In- n -4 H -SiC ohmic contact ( n ≈ 3 × 10 17 cm −3 ) has been studied by analyzing the temperature dependence of the per-unit-area contact…”
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  16. 16

    Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAsp-i-n Structures on the Relaxation time of Nonequilibrium Carriers by Sobolev, M.M, Soldatenkov, F. Yu

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2018)
    “…The results of an experimental study of the capacitance-voltage (C-V) characteristics and deep-level transient spectroscopy (DLTS) spectra of…”
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    Journal Article
  17. 17

    Creation and plasmon anisotropy spectroscopy of wedge-shaped gold nanoclusters conditioned by GaAs(001) surface by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Alekseev, P.A., Borodin, B.R., Soldatenkov, F.Yu, Nashchekin, A.V., Khakhulin, S.A., Komkov, O.S.

    Published in Surface science (01-04-2024)
    “…•Wedge-shaped gold nanoclusters are created on gallium arsenide surface.•Elongated Au-wedge nanoclusters are equally oriented on GaAs crystal surface.•Gold…”
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  18. 18

    Dissimilar gold nanoclusters at GaAs(0 0 1) surface: Formation chemistry, structure, and localized plasmons by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Soldatenkov, F.Yu, Makarenko, I.V., Levitskii, V.S., Nashchekin, A.V., Alekseev, P.A.

    Published in Applied surface science (30-03-2020)
    “…•Two types of gold nanoclusters are formed on annealing Au/GaAs structures.•The clusters are either buried in GaAs or located just on crystal surface.•The…”
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  19. 19

    Study of deep levels in GaAs p–i–n structures by Sobolev, M. M., Soldatenkov, F. Yu, Kozlov, V. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-07-2016)
    “…An experimental study of the capacitance–voltage ( C–V ) characteristics and deep-level transient spectroscopy (DLTS) of p + – p 0 – i – n 0 structures based…”
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  20. 20

    GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm by Khvostikov, V. P., Sorokina, S. V., Soldatenkov, F. Yu, Timoshina, N. Kh

    Published in Semiconductors (Woodbury, N.Y.) (01-08-2015)
    “…The photovoltaic (PV) laser-power converters for the wavelength λ = 1550 nm have been produced by diffusion from the gas phase into an n -GaSb substrate. PV…”
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