Search Results - "Soldatenkov, F. Yu"
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Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs
Published in Semiconductors (Woodbury, N.Y.) (01-04-2024)“…— High-voltage gradual p 0 – i – n 0 junctions of Al x Ga 1 – x As 1 – y Sb y with x ~ 0.24 and y ~ 0.05 in the i ‑region were studied using…”
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Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere
Published in Semiconductors (Woodbury, N.Y.) (01-02-2022)“…We present the results of experimental studies of the capacitance–voltage ( C–V ) characteristics and the spectra of deep-level transient spectroscopy (DLTS)…”
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Forming Regimes of Pd/Ge/Au Contact System to n-GaAs Influence on Its Electric Parameters
Published in Technical physics letters (01-12-2023)“…The investigations of Pd/Ge/Au contact system forming regimes influence on the specific contact resistivity to n -type conductivity GaAs layer were carried…”
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Deep-Level Transient Spectroscopy of Defects in AlGaAsSb/GaAs p–i–n Heterostructures
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01-08-2024)“…The study investigates high-voltage gradual p 0 – i – n 0 junctions in solid solutions of Al x Ga 1 – x As 1 – y Sb y with y up to 15%, which are capable of…”
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Manifestation of Dipole-Dipole and Quadrupole Interactions in the Correlator Spectrum of Optically Cooled Nuclear Spins of a Bulk n-Gaas Sample
Published in Semiconductors (Woodbury, N.Y.) (01-12-2023)“…In this work, we measured the correlator spectrum of optically cooled nuclear spin system of a bulk n -GaAs crystal in a zero magnetic field. The resulting…”
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Front Contact to the GaSb-Photovoltaic Converter: Properties and Thermal Stability
Published in Semiconductors (Woodbury, N.Y.) (01-03-2023)“…issues related to the thermal stability of front contacts, based on Cr–Au and Cr–Au–Ag–Au, to GaSb-based photovoltaic cells have been considered at the…”
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Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons
Published in Semiconductors (Woodbury, N.Y.) (01-04-2024)“…Using high-temperature annealing of thin gold nanofilms deposited onto the (001) surface of doped p -GaAs crystal with an ultrathin oxide layer, the…”
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Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers
Published in Semiconductors (Woodbury, N.Y.) (01-02-2018)“…The results of an experimental study of the capacitance–voltage ( C – V ) characteristics and deep-level transient spectroscopy (DLTS) spectra of p + – p 0 – i…”
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9
Plasmon Spectroscopy of Anisotropic Gold Nanoclusters on GaAs(001) Surface Passivated by Sulphur Atoms
Published in Semiconductors (Woodbury, N.Y.) (01-07-2023)“…This work demonstrates how to create the structures Au/GaAs with perfect on-surface gold nanoclusters. In doing so, used is covering the GaAs substrate with…”
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Effect of Chemical Passivation of GaAs(001) Surface on Anisotropy and Orientation of Gold Nanoclusters Formed on It and Their Plasmons
Published in Semiconductors (Woodbury, N.Y.) (01-04-2023)“…The principal role of chemical passivation of GaAs surface in the formation on it of oriented anisotropic nanoclusters of gold is discussed. The nanoclusters…”
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Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism
Published in Semiconductors (Woodbury, N.Y.) (01-04-2017)“…The interaction of heavily doped p - and n -type Si crystals with hydrofluoric acid in the dark with and without contact with metals having greatly differing…”
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A Study of Ohmic Contacts of Power Photovoltaic Converters
Published in Technical physics letters (01-12-2018)“…Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level…”
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Gold Nanoclusters at the Interface Au/GaAs(001): Preparation, Characterization, and Plasmonic Spectroscopy
Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)“…Local plasmons of gold nanoclusters formed at Au/GaAs interface are observed and investigated. The gold nanoclusters are prepared by thermal annealing of thin…”
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Control over carrier lifetime in high-voltage p-i-n diodes based on InxGa1-xAs/GaAs heterostructures
Published in Semiconductors (Woodbury, N.Y.) (01-02-2007)“…The possibility of controlling the effective lifetime of nonequilibrium carriers by varying the lattice mismatch between the interfaced materials of a…”
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15
Current flow mechanism in ohmic contact to n-4H-SiC
Published in Semiconductors (Woodbury, N.Y.) (01-04-2010)“…Current flow in an In- n -4 H -SiC ohmic contact ( n ≈ 3 × 10 17 cm −3 ) has been studied by analyzing the temperature dependence of the per-unit-area contact…”
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Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAsp-i-n Structures on the Relaxation time of Nonequilibrium Carriers
Published in Semiconductors (Woodbury, N.Y.) (01-02-2018)“…The results of an experimental study of the capacitance-voltage (C-V) characteristics and deep-level transient spectroscopy (DLTS) spectra of…”
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17
Creation and plasmon anisotropy spectroscopy of wedge-shaped gold nanoclusters conditioned by GaAs(001) surface
Published in Surface science (01-04-2024)“…•Wedge-shaped gold nanoclusters are created on gallium arsenide surface.•Elongated Au-wedge nanoclusters are equally oriented on GaAs crystal surface.•Gold…”
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Dissimilar gold nanoclusters at GaAs(0 0 1) surface: Formation chemistry, structure, and localized plasmons
Published in Applied surface science (30-03-2020)“…•Two types of gold nanoclusters are formed on annealing Au/GaAs structures.•The clusters are either buried in GaAs or located just on crystal surface.•The…”
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Study of deep levels in GaAs p–i–n structures
Published in Semiconductors (Woodbury, N.Y.) (01-07-2016)“…An experimental study of the capacitance–voltage ( C–V ) characteristics and deep-level transient spectroscopy (DLTS) of p + – p 0 – i – n 0 structures based…”
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20
GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm
Published in Semiconductors (Woodbury, N.Y.) (01-08-2015)“…The photovoltaic (PV) laser-power converters for the wavelength λ = 1550 nm have been produced by diffusion from the gas phase into an n -GaSb substrate. PV…”
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