Search Results - "Soci, Fabio"

Deep Levels Characterization in GaN HEMTs-Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy by Chini, Alessandro, Soci, Fabio, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico

“…In this paper, the effects of device self-heating on the extraction of traps activation energy are investigated through experimental measurements and numerical…”
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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design by Bisi, Davide, Chini, Alessandro, Soci, Fabio, Stocco, Antonio, Meneghini, Matteo, Pantellini, Alessio, Nanni, Antonio, Lanzieri, Claudio, Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, di-Forte-Poisson, Marie-Antoinette, Meneghesso, Gaudenzio, Zanoni, Enrico

“…Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility transistor employing different GaN buffer designs, including…”
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Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy : GaN ELECTRONIC DEVICES by CHINI, Alessandro, SOCI, Fabio, MENEGHINI, Matteo, MENEGHESSO, Gaudenzio, ZANONI, Enrico

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