Search Results - "Sobolewski, Mark A."

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  1. 1

    Ion velocities in the presheath of electronegative, radio-frequency plasmas measured by low-energy cutoff by Sobolewski, Mark A., Wang, Yicheng, Goyette, Amanda

    Published in Applied physics letters (11-07-2016)
    “…Simple kinematic considerations indicate that, under certain conditions in radio-frequency (rf) plasmas, the amplitude of the low-energy peak in ion energy…”
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    Journal Article
  2. 2

    Electrical characterization of radio‐frequency discharges in the Gaseous Electronics Conference Reference Cell by Sobolewski, Mark A.

    “…Measurements of the electrical characteristics of radio‐frequency (rf) discharges can be subject to large errors due to limitations in the measurement…”
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    Journal Article
  3. 3

    Electrical characteristics of argon radio frequency glow discharges in an asymmetric cell by Sobolewski, M.A.

    Published in IEEE transactions on plasma science (01-12-1995)
    “…Measurements of the current and voltage at both electrodes of a parallel-plate, capacitively coupled RF discharge cell (the Gaseous Electronics Conference…”
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    Journal Article
  4. 4

    2-D Imaging of Temperature in CF4 Plasmas by Steffens, Kristen L, Sobolewski, Mark A

    Published in IEEE transactions on plasma science (01-04-2005)
    “…Two-dimensional maps of rotational temperature were determined in CF4 plasmas using planar laser-induced fluorescence of CF. Experiments were performed in a…”
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    Journal Article
  5. 5

    Origin of electrical signals for plasma etching endpoint detection by Sobolewski, Mark A.

    Published in Applied physics letters (14-11-2011)
    “…Electrical signals are used for endpoint detection in plasma etching, but the origin of the electrical changes observed at endpoint is not known. They may be…”
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    Journal Article
  6. 6

    Electrical control of the spatial uniformity of reactive species in plasmas by Sobolewski, Mark A., Steffens, Kristen L.

    “…We report a new method for controlling the spatial distribution of reactive chemical species in a parallel-plate plasma reactor, by means of a…”
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    Journal Article
  7. 7

    Origin of electrical signals for plasma etching end point detection: Comparison of end point signals and electron density by Sobolewski, Mark A., Lahr, David L.

    “…Electrical signals are used for end point detection in plasma etching, but the origin of the electrical changes observed at end point is not well understood…”
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    Journal Article
  8. 8

    Real-time, noninvasive monitoring of ion energy and ion current at a wafer surface during plasma etching by Sobolewski, Mark A.

    “…A noninvasive, nonperturbing technique for real-time monitoring of ion energy distributions and total ion current at a wafer surface during plasma processing…”
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    Journal Article
  9. 9

    Current and Voltage Measurements in the Gaseous Electronics Conference RF Reference Cell by Sobolewski, Mark A

    “…Measurements of the electrical characteristics of discharges in the Gaseous Electronics Conference Radio-Frequency Reference Cell are reviewed here. Topics…”
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    Journal Article
  10. 10

    Power coupling and utilization efficiencies of silicon-depositing plasmas in mixtures of H2, SiH4, Si2H6, and Si3H8 by Sobolewski, Mark A., Ridgeway, Robert G., Bitner, Mark D., Sinatore, Dino, Hurley, Patrick T.

    “…Adding Si2H6 or Si3H8 additives to SiH4/H2 discharges increases the growth rates for thin films of microcrystalline and amorphous silicon, but the reasons for…”
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    Journal Article
  11. 11

    Electrical control of plasma spatial uniformity investigated by planar laser-induced fluorescence by Steffens, K.L., Sobolewski, M.A.

    Published in IEEE transactions on plasma science (01-02-1999)
    “…Planar laser-induced fluorescence was performed in the parallel-plate gaseous electronics conference reference cell to determine two-dimensional maps of the…”
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    Journal Article
  12. 12

    Real-Time, Noninvasive Monitoring of Ion Energy and Ion Current at Insulating Electrodes by Sobolewski, Mark A.

    “…Summary form only given. The dc self bias voltage is often monitored during plasma processing because it provides a rough estimate of ion bombardment energies…”
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    Conference Proceeding
  13. 13

    Effect of changing the electrode gap on the spatial and electrical properties of O2/CF4 plasmas by Steffens, Kristen L., Sobolewski, Mark A.

    “…Planar laser-induced fluorescence (PLIF) measurements were made to determine two-dimensional spatial maps of CF2 density as a chemical marker of plasma…”
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    Journal Article
  14. 14

    Planar laser-induced fluorescence of CF2 in O2/CF4 and O2/C2F6 chamber-cleaning plasmas: Spatial uniformity and comparison to electrical measurements by Steffens, Kristen L., Sobolewski, Mark A.

    “…Planar laser-induced fluorescence (PLIF) measurements were made to determine two-dimensional spatial maps of CF2 density as an indicator of chemical uniformity…”
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    Journal Article
  15. 15

    Effect of changing the electrode gap on the spatial and electrical properties of O 2 / CF 4 plasmas by Steffens, Kristen L., Sobolewski, Mark A.

    “…Planar laser-induced fluorescence (PLIF) measurements were made to determine two-dimensional spatial maps of CF 2 density as a chemical marker of plasma…”
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    Journal Article
  16. 16

    Planar laser-induced fluorescence of CF 2 in O 2 / CF 4 and O 2 / C 2 F 6 chamber-cleaning plasmas: Spatial uniformity and comparison to electrical measurements by Steffens, Kristen L., Sobolewski, Mark A.

    “…Planar laser-induced fluorescence (PLIF) measurements were made to determine two-dimensional spatial maps of CF 2 density as an indicator of chemical…”
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    Journal Article
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