Search Results - "Sobolewski, Mark A."
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Ion velocities in the presheath of electronegative, radio-frequency plasmas measured by low-energy cutoff
Published in Applied physics letters (11-07-2016)“…Simple kinematic considerations indicate that, under certain conditions in radio-frequency (rf) plasmas, the amplitude of the low-energy peak in ion energy…”
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Electrical characterization of radio‐frequency discharges in the Gaseous Electronics Conference Reference Cell
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-1992)“…Measurements of the electrical characteristics of radio‐frequency (rf) discharges can be subject to large errors due to limitations in the measurement…”
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Electrical characteristics of argon radio frequency glow discharges in an asymmetric cell
Published in IEEE transactions on plasma science (01-12-1995)“…Measurements of the current and voltage at both electrodes of a parallel-plate, capacitively coupled RF discharge cell (the Gaseous Electronics Conference…”
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2-D Imaging of Temperature in CF4 Plasmas
Published in IEEE transactions on plasma science (01-04-2005)“…Two-dimensional maps of rotational temperature were determined in CF4 plasmas using planar laser-induced fluorescence of CF. Experiments were performed in a…”
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Origin of electrical signals for plasma etching endpoint detection
Published in Applied physics letters (14-11-2011)“…Electrical signals are used for endpoint detection in plasma etching, but the origin of the electrical changes observed at endpoint is not known. They may be…”
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Electrical control of the spatial uniformity of reactive species in plasmas
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-1999)“…We report a new method for controlling the spatial distribution of reactive chemical species in a parallel-plate plasma reactor, by means of a…”
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Origin of electrical signals for plasma etching end point detection: Comparison of end point signals and electron density
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-09-2012)“…Electrical signals are used for end point detection in plasma etching, but the origin of the electrical changes observed at end point is not well understood…”
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Real-time, noninvasive monitoring of ion energy and ion current at a wafer surface during plasma etching
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-09-2006)“…A noninvasive, nonperturbing technique for real-time monitoring of ion energy distributions and total ion current at a wafer surface during plasma processing…”
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Current and Voltage Measurements in the Gaseous Electronics Conference RF Reference Cell
Published in Journal of research of the National Institute of Standards and Technology (01-07-1995)“…Measurements of the electrical characteristics of discharges in the Gaseous Electronics Conference Radio-Frequency Reference Cell are reviewed here. Topics…”
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Power coupling and utilization efficiencies of silicon-depositing plasmas in mixtures of H2, SiH4, Si2H6, and Si3H8
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2014)“…Adding Si2H6 or Si3H8 additives to SiH4/H2 discharges increases the growth rates for thin films of microcrystalline and amorphous silicon, but the reasons for…”
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Electrical control of plasma spatial uniformity investigated by planar laser-induced fluorescence
Published in IEEE transactions on plasma science (01-02-1999)“…Planar laser-induced fluorescence was performed in the parallel-plate gaseous electronics conference reference cell to determine two-dimensional maps of the…”
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Real-Time, Noninvasive Monitoring of Ion Energy and Ion Current at Insulating Electrodes
Published in 2007 IEEE 34th International Conference on Plasma Science (ICOPS) (01-06-2007)“…Summary form only given. The dc self bias voltage is often monitored during plasma processing because it provides a rough estimate of ion bombardment energies…”
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Conference Proceeding -
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Effect of changing the electrode gap on the spatial and electrical properties of O2/CF4 plasmas
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2003)“…Planar laser-induced fluorescence (PLIF) measurements were made to determine two-dimensional spatial maps of CF2 density as a chemical marker of plasma…”
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Planar laser-induced fluorescence of CF2 in O2/CF4 and O2/C2F6 chamber-cleaning plasmas: Spatial uniformity and comparison to electrical measurements
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-1999)“…Planar laser-induced fluorescence (PLIF) measurements were made to determine two-dimensional spatial maps of CF2 density as an indicator of chemical uniformity…”
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Effect of changing the electrode gap on the spatial and electrical properties of O 2 / CF 4 plasmas
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2003)“…Planar laser-induced fluorescence (PLIF) measurements were made to determine two-dimensional spatial maps of CF 2 density as a chemical marker of plasma…”
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Planar laser-induced fluorescence of CF 2 in O 2 / CF 4 and O 2 / C 2 F 6 chamber-cleaning plasmas: Spatial uniformity and comparison to electrical measurements
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-03-1999)“…Planar laser-induced fluorescence (PLIF) measurements were made to determine two-dimensional spatial maps of CF 2 density as an indicator of chemical…”
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Experimental tests of models of radio-frequency plasma sheaths
Published in Czechoslovak journal of physics (01-02-1998)Get full text
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