Search Results - "Snyder, David W."

Ga2O3‑on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics by Song, Yiwen, Shoemaker, Daniel, Leach, Jacob H, McGray, Craig, Huang, Hsien-Lien, Bhattacharyya, Arkka, Zhang, Yingying, Gonzalez-Valle, C. Ulises, Hess, Tina, Zhukovsky, Sarit, Ferri, Kevin, Lavelle, Robert M, Perez, Carlos, Snyder, David W, Maria, Jon-Paul, Ramos-Alvarado, Bladimir, Wang, Xiaojia, Krishnamoorthy, Sriram, Hwang, Jinwoo, Foley, Brian M, Choi, Sukwon

“…β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (E G ∼ 4.8 eV), which promises generational improvements in the performance…”
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Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond by Song, Yiwen, Perez, Carlos, Esteves, Giovanni, Lundh, James Spencer, Saltonstall, Christopher B, Beechem, Thomas E, Yang, Jung In, Ferri, Kevin, Brown, Joseph E, Tang, Zichen, Maria, Jon-Paul, Snyder, David W, Griffin, Benjamin A, Trolier-McKinstry, Susan E, Foley, Brian M, Choi, Sukwon

“…Radio frequency (RF) microelectromechanical systems (MEMS) based on Al1–x Sc x N are replacing AlN-based devices because of their higher achievable bandwidths,…”
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Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation by Robinson, Joshua A, Hollander, Matthew, LaBella, Michael, Trumbull, Kathleen A, Cavalero, Randall, Snyder, David W

“…We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. Upon successful buffer…”
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Characterization of Graphene Films and Transistors Grown on Sapphire by Metal-Free Chemical Vapor Deposition by Fanton, Mark A, Robinson, Joshua A, Puls, Conor, Liu, Ying, Hollander, Matthew J, Weiland, Brian E, LaBella, Michael, Trumbull, Kathleen, Kasarda, Richard, Howsare, Casey, Stitt, Joseph, Snyder, David W

“…We present a novel method for the direct metal-free growth of graphene on sapphire that yields high quality films comparable to that of graphene grown on SiC…”
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Prospects of direct growth boron nitride films as substrates for graphene electronics by Bresnehan, Michael S., Hollander, Matthew J., Wetherington, Maxwell, Wang, Ke, Miyagi, Takahira, Pastir, Gregory, Snyder, David W., Gengler, Jamie J., Voevodin, Andrey A., Mitchel, William C., Robinson, Joshua A.

“…We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x…”
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Influence of the Underlying Substrate on the Physical Vapor Deposition of Zn-Phthalocyanine on Graphene by Mirabito, Timothy, Huet, Benjamin, Redwing, Joan M, Snyder, David W

“…Graphene shows great promise not only as a highly conductive flexible and transparent electrode for fabricating novel device architectures but also as an ideal…”
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Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology by Huet, Benjamin, Raskin, Jean-Pierre, Snyder, David W., Redwing, Joan M.

“…The transfer of large-area graphene is a critical step in the development of technological applications, particularly when its structural integrity and…”
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Cellulose-based laser-induced graphene devices for electrochemical monitoring of bacterial phenazine production and viability by Butler, Derrick, Kammarchedu, Vinay, Zhou, Keren, Peeke, Lachlan, Lyle, Luke, Snyder, David W., Ebrahimi, Aida

“…As an easily disposable substrate with a microporous texture, paper is a well-suited, generic substrate to build analytical devices for studying bacteria…”
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Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices by Bresnehan, Michael S, Hollander, Matthew J, Wetherington, Maxwell, LaBella, Michael, Trumbull, Kathleen A, Cavalero, Randal, Snyder, David W, Robinson, Joshua A

“…Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic devices. Here we investigate the potential of h-BN gate…”
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Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers by Bachu, Saiphaneendra, Kowalik, Malgorzata, Huet, Benjamin, Nayir, Nadire, Dwivedi, Swarit, Hickey, Danielle Reifsnyder, Qian, Chenhao, Snyder, David W., Rotkin, Slava V., Redwing, Joan M., van Duin, Adri C. T., Alem, Nasim

“…Over the past few years, graphene grown by chemical vapor deposition (CVD) has gained prominence as a template to grow transition metal dichalcogenide (TMD)…”
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Growth Kinetics and Atomistic Mechanisms of Native Oxidation of ZrSxSe2-x and MoS2 Crystals by Jo, Seong Soon, Singh, Akshay, Yang, Liqiu, Tiwari, Subodh C, Hong, Sungwook, Krishnamoorthy, Aravind, Sales, Maria Gabriela, Oliver, Sean M, Fox, Joshua, Cavalero, Randal L, Snyder, David W, Vora, Patrick M, McDonnell, Stephen J, Vashishta, Priya, Kalia, Rajiv K, Nakano, Aiichiro, Jaramillo, R

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Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching by Han, Sang-Woo, Song, Jianan, Yoo, Sang Ha, Ma, Ziguang, Lavelle, Robert M., Snyder, David W., Redwing, Joan M., Jackson, Thomas N., Chu, Rongming

“…This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the…”
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Role of Bilayer Graphene Microstructure on the Nucleation of WSe 2 Overlayers by Bachu, Saiphaneendra, Kowalik, Malgorzata, Huet, Benjamin, Nayir, Nadire, Dwivedi, Swarit, Hickey, Danielle Reifsnyder, Qian, Chenhao, Snyder, David W, Rotkin, Slava V, Redwing, Joan M, van Duin, Adri C T, Alem, Nasim

“…Over the past few years, graphene grown by chemical vapor deposition (CVD) has gained prominence as a template to grow transition metal dichalcogenide (TMD)…”
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Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene by Hollander, Matthew J, LaBella, Michael, Hughes, Zachary R, Zhu, Michael, Trumbull, Kathleen A, Cavalero, Randal, Snyder, David W, Wang, Xiaojun, Hwang, Euichul, Datta, Suman, Robinson, Joshua A

“…We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for…”
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Chemical vapor transport synthesis, characterization and compositional tuning of ZrSxSe2−x for optoelectronic applications by Fox, Joshua J., Bachu, Saiphaneendra, Cavalero, Randal L., Lavelle, Robert M., Oliver, Sean M., Yee, Sam, Vora, Patrick M., Alem, Nasim, Snyder, David W.

“…•Growth of ZrSxSe2−x by CVT process is influenced strongly by selection of metal source particles.•Raman spectra of ZrSxSe2−x mixed alloys reveals presence of…”
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Thermal Conductivity of β‑Phase Ga2O3 and (Al x Ga1– x )2O3 Heteroepitaxial Thin Films by Song, Yiwen, Ranga, Praneeth, Zhang, Yingying, Feng, Zixuan, Huang, Hsien-Lien, Santia, Marco D, Badescu, Stefan C, Gonzalez-Valle, C. Ulises, Perez, Carlos, Ferri, Kevin, Lavelle, Robert M, Snyder, David W, Klein, Brianna A, Deitz, Julia, Baca, Albert G, Maria, Jon-Paul, Ramos-Alvarado, Bladimir, Hwang, Jinwoo, Zhao, Hongping, Wang, Xiaojia, Krishnamoorthy, Sriram, Foley, Brian M, Choi, Sukwon

“…Heteroepitaxy of β-phase gallium oxide (β-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar…”
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Impact of Copper Overpressure on the Synthesis of Hexagonal Boron Nitride Atomic Layers by Bresnehan, Michael S, Bhimanapati, Ganesh R, Wang, Ke, Snyder, David W, Robinson, Joshua A

“…Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains…”
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Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals by Zhang, Shujun, Yoshikawa, Akira, Kamada, Kei, Frantz, Eric, Xia, Ru, Snyder, David W., Fukuda, Tsuguo, Shrout, Thomas R.

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High-temperature piezoelectric single crystal ReCa4O(BO3)3 for sensor applications by Shujun Zhang, Yiting Fei, Frantz, E., Snyder, D., Chai, B., Shrout, T.

“…Large-size and high-quality ReCa 4 O(BO 3 ) 3 (ReCOB, Re = rare earth) single crystals were grown by the Czochralski pulling method. In this work, the…”
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Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties by Hollander, Matthew J., Agrawal, Ashish, Bresnehan, Michael S., LaBella, Michael, Trumbull, Kathleen A., Cavalero, Randal, Snyder, David W., Datta, Suman, Robinson, Joshua A.

“…We present a comprehensive study on the integration of hexagonal boron nitride (h‐BN) with epitaxial graphene (EG) and bilayer hydrogen intercalated EG…”
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