Search Results - "Smyslova, T. N."

Phase transformations and ordering effects in nanocrystalline carbon-containing silicon films by Orlov, L. K., Drozdov, Yu. N., Drozdov, M. N., Tarasova, Yu. I., Smyslova, T. N., Alyabina, N. A., Pitirimova, E. A., Vdovin, V. I.

“…The phase composition, surface morphology, and crystal structure of carbon-containing Si layers obtained on silicon surface by chemical conversion are…”
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Hydrogen Desorption from the Surface under the Conditions of Epitaxial Growth of Silicon Layers from Monosilane in Vacuum by Orlov, L. K.

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Kinetics of the decomposition of disilane molecules on a silicon growth surface in vacuum chemical epitaxy by Ivina, N. L., Smyslova, T. N.

“…In the framework of the kinetic approach based on data of technological experiments, the range of characteristic rates of decomposition of disilane radical…”
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Specificity of mono- and disilane decomposition at silicon surface under conditions of epitaxial growth by Orlov, L. K., Ivina, N. L., Smyslova, T. N.

“…Basic kinetic parameters of surface hydrogen desorption and of adsorbed silicon hydrides decomposition has been evaluated by kinetic simulation based on data…”
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Kinetics of disilane molecule decomposition on the growth surface of silicon in vacuum gas-phase epitaxy reactors by Orlov, L. K., Smyslova, T. N.

“…The range of the characteristic decomposition rates of dihydride molecule radicals adsorbed by the silicon surface in the temperature interval 450–700°C is…”
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The special features of adsorption and the kinetics of decomposition of monosilane molecules on the epitaxial surface of silicon by Orlov, L. K., Ivin, S. V., Smyslova, T. N.

“…Analytic equations relating the rate of the incorporation of silicon atoms into a growing crystal to the characteristic frequency of the pyrolysis of silane…”
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Features and mechanisms of growth of cubic silicon carbide films on silicon by Orlov, L. K., Steinman, E. A., Smyslova, T. N., Ivina, N. L., Tereshchenko, A. N.

“…The mechanisms and specific features of the growth of silicon carbide layers through vacuum chemical epitaxy in the range of growth temperatures from 1000 to…”
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A comparative analysis of the dissociation kinetics models for silane molecules on the surface at epitaxial growth, of silicon films, in vacuum by Orlov, L. K., Smyslova, T. N.

“…On the basis of different physicochemical models, surface concentrations of monosilane dissociation products on the surface of a silicon film are analyzed. The…”
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Specific features of morphology and the structure of nanocrystalline cubic silicon carbide films grown on a silicon surface by Orlov, L. K., Drozdov, Yu. N., Vdovin, V. I., Tarasova, Yu. I., Smyslova, T. N.

“…The composition, surface morphology, and crystal structure of nanocrystalline cubic silicon carbide films grown on a silicon surface through chemical…”
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Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures by Orlov, L.K., Ivina, N.L., Potapov, A.V., Smyslova, T.N., Vinogradsky, L.M., Horvath, Z.J.

“…In the present activity the properties of the Si/SiGe MODFET structure with a Si electronic transport channel in SiGe layer are studied. Larger attention is…”
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