Search Results - "Smoliner, J."

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  1. 1

    Bias-tunable temperature coefficient of resistance in Ge transistors by Behrle, R., Smoliner, J., Wind, L., Nazzari, D., Lugstein, A., Weber, W. M., Sistani, M.

    Published in Applied physics letters (26-02-2024)
    “…Ge-based bolometers are widely used for near-infrared detection for a broad range of applications such as thermography or chemical analysis. Notably, for the…”
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    Journal Article
  2. 2

    Calibrated nanoscale capacitance measurements using a scanning microwave microscope by Huber, H P, Moertelmaier, M, Wallis, T M, Chiang, C J, Hochleitner, M, Imtiaz, A, Oh, Y J, Schilcher, K, Dieudonne, M, Smoliner, J, Hinterdorfer, P, Rosner, S J, Tanbakuchi, H, Kabos, P, Kienberger, F

    Published in Review of scientific instruments (01-11-2010)
    “…A scanning microwave microscope (SMM) for spatially resolved capacitance measurements in the attofarad-to-femtofarad regime is presented. The system is based…”
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    Journal Article
  3. 3

    Rashba effect in type-II resonant tunneling diodes enhanced by in-plane magnetic fields by Silvano de Sousa, J., Smoliner, J.

    “…In this paper, we adapt the transfer matrix method to calculate the current-voltage curves of type-II GaAsSb/InGaAs resonant tunneling diodes on which a huge…”
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    Journal Article
  4. 4

    Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric by Bethge, O., Henkel, C., Abermann, S., Pozzovivo, G., Stoeger-Pollach, M., Werner, W.S.M., Smoliner, J., Bertagnolli, E.

    Published in Applied surface science (01-02-2012)
    “…► Comparative XPS analysis of the chemical stability of La2O3 and GeO2 Ge surface passivation during ALD of ZrO2. ► Comparative electrical characterization of…”
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    Journal Article
  5. 5

    Integrating an Ultramicroelectrode in an AFM Cantilever:  Combined Technology for Enhanced Information by Kranz, Christine, Friedbacher, Gernot, Mizaikoff, Boris, Lugstein, Alois, Smoliner, Jürgen, Bertagnolli, Emmerich

    Published in Analytical chemistry (Washington) (01-06-2001)
    “…We present a novel approach to develop and process a microelectrode integrated in a standard AFM tip. The presented fabrication process allows the integration…”
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    Journal Article
  6. 6

    An intercepted feedback mode for light sensitive spectroscopic measurements in atomic force microscopy by Smoliner, J, Brezna, W

    Published in Review of scientific instruments (01-10-2007)
    “…In most atomic force microscopes (AFMs), the motion of the tip is detected by the deflection of a laser beam shining onto the cantilever. AFM applications such…”
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    Journal Article
  7. 7

    FIB processing of silicon in the nanoscale regime by Lugstein, A., Basnar, B., Smoliner, J., Bertagnolli, E.

    “…We have investigated the impact of shrinking feature sizes on the sputter efficiency of focused ion beams on crystalline silicon. On the basis of this…”
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    Journal Article
  8. 8

    Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors by Bethge, O., Abermann, S., Henkel, C., Straif, C. J., Hutter, H., Smoliner, J., Bertagnolli, E.

    Published in Applied physics letters (01-02-2010)
    “…ZrO 2 / GeO 2 dielectrics are grown on germanium substrates by Atomic Layer Deposition (ALD) at substrate temperatures of 150, 200, and 250 °C, respectively…”
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    Journal Article
  9. 9

    Quantitative scanning capacitance microscopy on single subsurface InAs quantum dots by Smoliner, J., Brezna, W., Klang, P., Andrews, A. M., Strasser, G.

    Published in Applied physics letters (03-03-2008)
    “…Quantitative scanning capacitance microscopy on InAs quantum dots requires low modulation frequencies and complete darkness. Using a modified feedback method…”
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    Journal Article
  10. 10

    Cross-sectional ballistic electron emission microscopy for Schottky barrier height profiling on heterostructures by Rakoczy, D., Strasser, G., Smoliner, J.

    Published in Applied physics letters (16-05-2005)
    “…In this work, cross-sectional ballistic electron emission microscopy is introduced to determine a Schottky barrier height profile of a GaAs-AlGaAs…”
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    Journal Article
  11. 11

    Electron-beam deposited SiO2 investigated by scanning capacitance microscopy by Brezna, W., Fischer, M., Wanzenboeck, H. D., Bertagnolli, E., Smoliner, J.

    Published in Applied physics letters (20-03-2006)
    “…The quality of electron-beam deposited, few nanometers thick, SiO2 layers on silicon substrates was investigated by scanning capacitance microscopy and…”
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    Journal Article
  12. 12

    Quantitative scanning capacitance spectroscopy by Brezna, W., Schramboeck, M., Lugstein, A., Harasek, S., Enichlmair, H., Bertagnolli, E., Gornik, E., Smoliner, J.

    Published in Applied physics letters (17-11-2003)
    “…In this work, a setup for quantitative scanning capacitance spectroscopy is introduced, where an ultrahigh precision, calibrated capacitance bridge is used…”
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    Journal Article
  13. 13

    Two color, low intensity photocurrent feedback for local photocurrent spectroscopy by Brezna, W, Strasser, G, Smoliner, J

    Published in Review of scientific instruments (01-06-2007)
    “…In this work, we introduce a two color, low intensity photocurrent feedback method for photocurrent spectroscopy utilizing an atomic force microscope (AFM). In…”
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    Journal Article
  14. 14

    Ballistic electron emission microscopy on spin valve structures by Heer, R., Smoliner, J., Bornemeier, J., Brückl, H.

    Published in Applied physics letters (08-11-2004)
    “…Spin valve structures, as employed in base layers of spin valve transistor devices, are characterized by ballistic electron emission microscopy (BEEM). In…”
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    Journal Article
  15. 15

    Geometry effects and frequency dependence in scanning capacitance microscopy on GaAs Schottky and metal–oxide–semiconductor-Type junctions by Eckhardt, C., Brezna, W., Silvano, J., Bethge, O., Bertagnolli, E., Smoliner, J.

    “…In this work, the influence of the tip-geometry and an unusual low frequency behavior in scanning capacitance microscopy is investigated experimentally and…”
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    Journal Article Conference Proceeding
  16. 16

    Tracing deeply buried InAs∕GaAs quantum dots using atomic force microscopy and wet chemical etching by Fasching, G., Unterrainer, K., Brezna, W., Smoliner, J., Strasser, G.

    Published in Applied physics letters (07-02-2005)
    “…We present cross-sectional atomic-force-microscope measurements of buried self-assembled quantum dots. The used method needs a minimum of time and sample…”
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    Journal Article
  17. 17

    Mechanism of bias-dependent contrast in scanning-capacitance-microscopy images by Smoliner, J., Basnar, B., Golka, S., Gornik, E., Löffler, B., Schatzmayr, M., Enichlmair, H.

    Published in Applied physics letters (05-11-2001)
    “…In this work, the physical processes leading to contrast in scanning capacitance microscopy (SCM) are investigated both experimentally and theoretically. Using…”
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    Journal Article
  18. 18

    Nanoscopic versus macroscopic C-V characterization of high-κ metal-oxide chemical vapor deposition ZrO2 thin films by ABERMANN, S, BREZNA, W, SMOLINER, J, BERTAGNOLLI, E

    Published in Microelectronic engineering (01-04-2006)
    “…In this paper we compare macroscopic C-V-measurements with (local) scanning capacitance (SCM) measurements to extract electrical parameters. In future…”
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    Conference Proceeding Journal Article
  19. 19

    Advanced nanoscale material processing with focused ion beams by Lugstein, A., Basnar, B., Smoliner, J., Bertagnolli, E., Weil, M.

    “…We present an approach for the generation of metallic Ga dots and In nano-crystallites which, in contrast to conventional bottom-up or top-down processes, is…”
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    Journal Article
  20. 20

    Measuring the energetic distribution of ballistic electrons after their refraction at an Au–GaAs interface by Rakoczy, D., Strasser, G., Smoliner, J.

    Published in Applied physics letters (23-12-2002)
    “…In this work, ballistic electron emission microscopy/spectroscopy on biased GaAs–AlAs double-barrier resonant tunneling structures is used to study the…”
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    Journal Article