Search Results - "Smoliner, J."
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1
Bias-tunable temperature coefficient of resistance in Ge transistors
Published in Applied physics letters (26-02-2024)“…Ge-based bolometers are widely used for near-infrared detection for a broad range of applications such as thermography or chemical analysis. Notably, for the…”
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2
Calibrated nanoscale capacitance measurements using a scanning microwave microscope
Published in Review of scientific instruments (01-11-2010)“…A scanning microwave microscope (SMM) for spatially resolved capacitance measurements in the attofarad-to-femtofarad regime is presented. The system is based…”
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3
Rashba effect in type-II resonant tunneling diodes enhanced by in-plane magnetic fields
Published in Physical review. B, Condensed matter and materials physics (08-02-2012)“…In this paper, we adapt the transfer matrix method to calculate the current-voltage curves of type-II GaAsSb/InGaAs resonant tunneling diodes on which a huge…”
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4
Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric
Published in Applied surface science (01-02-2012)“…► Comparative XPS analysis of the chemical stability of La2O3 and GeO2 Ge surface passivation during ALD of ZrO2. ► Comparative electrical characterization of…”
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5
Integrating an Ultramicroelectrode in an AFM Cantilever: Combined Technology for Enhanced Information
Published in Analytical chemistry (Washington) (01-06-2001)“…We present a novel approach to develop and process a microelectrode integrated in a standard AFM tip. The presented fabrication process allows the integration…”
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6
An intercepted feedback mode for light sensitive spectroscopic measurements in atomic force microscopy
Published in Review of scientific instruments (01-10-2007)“…In most atomic force microscopes (AFMs), the motion of the tip is detected by the deflection of a laser beam shining onto the cantilever. AFM applications such…”
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7
FIB processing of silicon in the nanoscale regime
Published in Applied physics. A, Materials science & processing (01-03-2003)“…We have investigated the impact of shrinking feature sizes on the sputter efficiency of focused ion beams on crystalline silicon. On the basis of this…”
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8
Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors
Published in Applied physics letters (01-02-2010)“…ZrO 2 / GeO 2 dielectrics are grown on germanium substrates by Atomic Layer Deposition (ALD) at substrate temperatures of 150, 200, and 250 °C, respectively…”
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9
Quantitative scanning capacitance microscopy on single subsurface InAs quantum dots
Published in Applied physics letters (03-03-2008)“…Quantitative scanning capacitance microscopy on InAs quantum dots requires low modulation frequencies and complete darkness. Using a modified feedback method…”
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10
Cross-sectional ballistic electron emission microscopy for Schottky barrier height profiling on heterostructures
Published in Applied physics letters (16-05-2005)“…In this work, cross-sectional ballistic electron emission microscopy is introduced to determine a Schottky barrier height profile of a GaAs-AlGaAs…”
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11
Electron-beam deposited SiO2 investigated by scanning capacitance microscopy
Published in Applied physics letters (20-03-2006)“…The quality of electron-beam deposited, few nanometers thick, SiO2 layers on silicon substrates was investigated by scanning capacitance microscopy and…”
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12
Quantitative scanning capacitance spectroscopy
Published in Applied physics letters (17-11-2003)“…In this work, a setup for quantitative scanning capacitance spectroscopy is introduced, where an ultrahigh precision, calibrated capacitance bridge is used…”
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13
Two color, low intensity photocurrent feedback for local photocurrent spectroscopy
Published in Review of scientific instruments (01-06-2007)“…In this work, we introduce a two color, low intensity photocurrent feedback method for photocurrent spectroscopy utilizing an atomic force microscope (AFM). In…”
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14
Ballistic electron emission microscopy on spin valve structures
Published in Applied physics letters (08-11-2004)“…Spin valve structures, as employed in base layers of spin valve transistor devices, are characterized by ballistic electron emission microscopy (BEEM). In…”
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15
Geometry effects and frequency dependence in scanning capacitance microscopy on GaAs Schottky and metal–oxide–semiconductor-Type junctions
Published in Physica. E, Low-dimensional systems & nanostructures (01-02-2010)“…In this work, the influence of the tip-geometry and an unusual low frequency behavior in scanning capacitance microscopy is investigated experimentally and…”
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Journal Article Conference Proceeding -
16
Tracing deeply buried InAs∕GaAs quantum dots using atomic force microscopy and wet chemical etching
Published in Applied physics letters (07-02-2005)“…We present cross-sectional atomic-force-microscope measurements of buried self-assembled quantum dots. The used method needs a minimum of time and sample…”
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17
Mechanism of bias-dependent contrast in scanning-capacitance-microscopy images
Published in Applied physics letters (05-11-2001)“…In this work, the physical processes leading to contrast in scanning capacitance microscopy (SCM) are investigated both experimentally and theoretically. Using…”
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18
Nanoscopic versus macroscopic C-V characterization of high-κ metal-oxide chemical vapor deposition ZrO2 thin films
Published in Microelectronic engineering (01-04-2006)“…In this paper we compare macroscopic C-V-measurements with (local) scanning capacitance (SCM) measurements to extract electrical parameters. In future…”
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Conference Proceeding Journal Article -
19
Advanced nanoscale material processing with focused ion beams
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-11-2004)“…We present an approach for the generation of metallic Ga dots and In nano-crystallites which, in contrast to conventional bottom-up or top-down processes, is…”
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20
Measuring the energetic distribution of ballistic electrons after their refraction at an Au–GaAs interface
Published in Applied physics letters (23-12-2002)“…In this work, ballistic electron emission microscopy/spectroscopy on biased GaAs–AlAs double-barrier resonant tunneling structures is used to study the…”
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