Search Results - "Smith, Jackson S"

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  1. 1

    Influence of Device Geometry and Imperfections on the Interpretation of Transverse Magnetic Focusing Experiments by Lee, Yik Kheng, Smith, Jackson S., Cole, Jared H.

    Published in Nanoscale research letters (05-03-2022)
    “…Spatially separating electrons of different spins and efficiently generating spin currents are crucial steps towards building practical spintronics devices…”
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    Journal Article
  2. 2

    Microscopic quantum point contact formation as the electromigration mechanism in granular superconductor nanowires by Bartolo, Tommy C, Smith, Jackson S, Schön, Yannick, Voss, Jan Nicolas, Cyster, Martin J, Ustinov, Alexey V, Rotzinger, Hannes, Cole, Jared H

    Published in New journal of physics (01-07-2022)
    “…Granular aluminium is a high kinetic inductance thin film superconductor which, when formed into nanowires can undergo an intrinsic electromigration process…”
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    Journal Article
  3. 3

    Localized Wannier function based tight-binding models for two-dimensional allotropes of bismuth by Li, Qile, Smith, Jackson S, Yin, Yuefeng, Wang, Chutian, Klymenko, Mykhailo V, Cole, Jared H, Medhekar, Nikhil V

    Published in New journal of physics (01-06-2021)
    “…With its monoelemental composition, various crystalline forms and an inherently strong spin–orbit coupling, bismuth has been regarded as an ideal prototype…”
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    Journal Article
  4. 4

    A Laser-Activated Membrane Introduction Mass Spectrometry Study of Proton Spillover Promoted Alkane Dehydrogenation by Kim, Ryan Yongtae, Rivera, Harry, Evarts, Sara E, Rodríguez-Martínez, José A, Willis, Richard R, Galloway, Douglas B, Falih, Falaah, McCall, Michael J, Smith, S. Jackson, Perz, Kyra, Smotkin, Eugene S

    Published in Analytical chemistry (Washington) (06-10-2020)
    “…Operando high-throughput evaluation of heterogeneous catalysts by laser-activated membrane introduction mass spectrometry (LAMIMS) elucidates the Pt loading…”
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    Journal Article
  5. 5

    Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide by Booth, Jamie M., Drumm, Daniel W., Casey, Phil S., Smith, Jackson S., Seeber, Aaron J., Bhargava, Suresh K., Russo, Salvy P.

    Published in Scientific reports (23-05-2016)
    “…Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the…”
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    Journal Article
  6. 6

    Influence of device geometry and imperfections on the interpretation of transverse magnetic focusing experiments by Lee, Yik K, Smith, Jackson S, Cole, Jared H

    Published 18-03-2022
    “…Spatially separating electrons of different spins and efficiently generating spin currents are crucial steps towards building practical spintronics devices…”
    Get full text
    Journal Article
  7. 7

    Localized Wannier function based tight-binding models for two-dimensional allotropes of bismuth by Li, Qile, Smith, Jackson S, Yin, Yuefeng, Wang, Chutian, Klymenko, Mykhailo V, Cole, Jared H, Medhekar, Nikhil V

    Published 23-02-2021
    “…New J. Phys. 23, 063042 (2021) With its monoelemental composition, various crystalline forms and an inherently strong spin-orbit coupling, bismuth has been…”
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    Journal Article
  8. 8

    An Ab Initio Description of the Mott Metal-Insulator Transition of M$_{2}$ Vanadium Dioxide by Booth, Jamie M, Drumm, Daniel W, Casey, Phil S, Bhargava, Suresh K, Smith, Jackson S, Russo, Salvy P

    Published 13-09-2017
    “…Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of…”
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    Journal Article
  9. 9

    Hubbard Physics in the PAW GW Approximation by Booth, Jamie M, Drumm, Daniel W, Casey, Phil S, Smith, Jackson S, Russo, Salvy P

    Published 29-04-2016
    “…It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero…”
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    Journal Article
  10. 10

    Electronic properties of delta-doped phosphorus layers in silicon and germanium by Smith, Jackson S, Cole, Jared H, Russo, Salvy P

    Published 23-08-2013
    “…Phys. Rev. B 89, 035306 (2014) The Thomas-Fermi-Dirac (TFD) approximation and an sp3d5s* tight binding method were used to calculate the electronic properties…”
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    Journal Article
  11. 11

    Electronic structure of tungsten-doped vanadium dioxide by Booth, Jamie M, Drumm, Daniel W, Casey, Phil S, Smith, Jackson S, Russo, Salvy P

    Published 01-07-2015
    “…A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting…”
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    Journal Article
  12. 12