Search Results - "Smith, Casey E."

Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation by Sevilla, Galo A. Torres, Rojas, Jhonathan P., Fahad, Hossain M., Hussain, Aftab M., Ghanem, Rawan, Smith, Casey E., Hussain, Muhammad M.

“…An industry standard 8′′ silicon‐on‐insulator wafer based ultra‐thin (1 μm), ultra‐light‐weight, fully flexible and remarkably transparent state‐of‐the‐art…”
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Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature by Qaisi, Ramy M., Smith, Casey E., Hussain, Muhammad M.

“…We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra‐scaled (10 nm) high‐κ dielectric…”
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Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits by Fahad, Hossain M, Smith, Casey E, Rojas, Jhonathan P, Hussain, Muhammad M

“…We introduce the concept of a silicon nanotube field effect transistor whose unique core–shell gate stacks help achieve full volume inversion by giving a surge…”
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Design and Finite Element Method Analysis of Laterally Actuated Multi-Value Nano Electromechanical Switches by Kloub, Hussam A, Smith, Casey E, Hussain, Muhammad M

“…We report on the design and modeling of novel nano electromechanical switches suitable for implementing reset/set flip-flops, AND, NOR, and XNOR Boolean…”
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Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate by Aktakka, Ethem Erkan, Ghafouri, Niloufar, Smith, Casey E., Peterson, Rebecca L., Hussain, Muhammad Mustafa, Najafi, Khalil

“…This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi 2 Te 3 ) and antimony telluride (Sb 2 Te 3 ) thin-film-based…”
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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k /Metal Gates CMOS FinFETs for Multi- V Th Engineering by Hussain, Muhammad Mustafa, Smith, Casey E, Harris, HRusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao

“…Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high- k /metal gates CMOS FinFETs was demonstrated to…”
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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-VTh Engineering by MUHAMMAD MUSTAFA HUSSAIN, SMITH, Casey E, RUSTY HARRIS, H, YOUNG, Chadwin D, TSENG, Hsing-Huang, JAMMY, Rajarao

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Cover Picture: Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature (Phys. Status Solidi RRL 7/2014) by Qaisi, Ramy M., Smith, Casey E., Hussain, Muhammad M.

“…A low‐cost and simple atmospheric chemical vapor deposition (APCVD) based double‐layer graphene is used to study its transport phenomena at temperature as high…”
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Design and Finite Element Method Analysis of Laterally Actuated Multi-Value Nano Electromechanical Switches by Kloub, Hussam A., Smith, Casey E., Hussain, Muhammad M.

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Erratum: "Mitigation of Complementary Metal--Oxide--Semiconductor Variability with Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors" by Yang, Ji-Woon, Park, Chang Seo, Smith, Casey E, Adhikari, Hemant, Huang, Jeff, Heh, Dawei, Majhi, Prashant, Jammy, Raj

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Simplistic graphene transfer process and its impact on contact resistance by Ghoneim, Mohamed T., Smith, Casey E., Hussain, Muhammad M.

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Energy reversible switching from amorphous metal based nanoelectromechanical switch by Mayet, Abdulilah, Smith, Casey E., Hussain, Muhammad M.

“…We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM…”
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Field-Effect Transistors: Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation (Adv. Mater. 18/2014) by Sevilla, Galo A. Torres, Rojas, Jhonathan P., Fahad, Hossain M., Hussain, Aftab M., Ghanem, Rawan, Smith, Casey E., Hussain, Muhammad M.

“…The brain's cortex is folded and thus can accommodate billions of neurons in an ultra‐compact area. On page 2794, M. M. Hussain and co‐workers demonstrate the…”
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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering by Hussain, Muhammad Mustafa, Smith, Casey E, Harris, H Rusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao

“…Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve…”
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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-[Formula Omitted]/Metal Gates CMOS FinFETs for Multi- [Formula Omitted] Engineering by Hussain, Muhammad Mustafa, Smith, Casey E, Harris, H. Rusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao

“…Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-[Formula Omitted]/metal gates CMOS FinFETs was…”
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Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors” by Yang, Ji-Woon, Park, Chang Seo, Smith, Casey E., Adhikari, Hemant, Huang, Jeff, Heh, Dawei, Majhi, Prashant, Jammy, Raj

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k/Metal Gates CMOS FinFETs for Multi- V Engineering by Hussain, M.M., Smith, C.E., Harris, H.R., Young, C.D., Hsing-Huang Tseng, Jammy, R.

“…Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve…”
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Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors by Yang, Ji-Woon, Park, Chang Seo, Smith, Casey E., Adhikari, Hemant, Huang, Jeff, Heh, Dawei, Majhi, Prashant, Jammy, Raj

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High mobility SiGe shell-Si core omega gate pFETS by Adhikari, H., Harris, H.R., Smith, C.E., Ji-Woon Yang, Coss, B., Parthasarathy, S., Bich-Yen Nguyen, Patruno, P., Krishnamohan, T., Cayrefourcq, I., Majhi, P., Jammy, R.

“…Omega gate type pFETs with SiGe shell-Si core are demonstrated that show 30% mobility enhancement for (110) oriented fins and 46% mobility enhancement for…”
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