Search Results - "Smit, J. D. G."

Layout Dependent Effects Of Passive Devices And Their Impact On Analog Integrated Circuits by Jayakumar, A., van Dort, M., Vertregt, M., Smit, G. D. J., Lander, R., Liu, I., Volf, P.

“…Analog blocks on products built using advanced CMOS technologies were seen to have deviating behavior on silicon than estimated by post layout simulations,…”
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Scaling of nano-Schottky-diodes by Smit, G. D. J., Rogge, S., Klapwijk, T. M.

“…A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a…”
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Enhanced tunneling across nanometer-scale metal–semiconductor interfaces by Smit, G. D. J., Rogge, S., Klapwijk, T. M.

“…We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the…”
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Stark effect in shallow impurities in Si by SMIT, G. D. J, ROGGE, S, CARO, J, KLAPWIJK, T. M

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PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations by Wu, W., Li, X., Gildenblat, G., Workman, G.O., Veeraraghavan, S., McAndrew, C.C., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., Watts, J.

“…This paper reports recent progress in partially depleted (PD) SOI MOSFET modeling using a surface potential based approach. The new model is formulated within…”
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Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs by van der Steen, J.-L.P.J., Hueting, R.J.E., Smit, G.D.J., Hoang, T.., Holleman, J.., Schmitz, J..

“…The effect of quantum confinement in thin silicon-on-insulator double-gate MOSFETs has been directly determined from subthreshold current measurements for the…”
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RF benchmark tests for compact MOS models by Smit, G D J, Scholten, A J, Klaassen, D B M

“…Next to accurate fits of measurements, smoothness, and robustness, compact MOSFET models should ideally meet a large number of additional requirements. In this…”
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Scaling of micro-fabricated nanometer-sized Schottky diodes by Smit, G.D.J., Flokstra, M.G., Rogge, S., Klapwijk, T.M.

“…Diodes on the nanometer scale generally show non-ideal transport characteristics. In this paper, the transition of a conventional Schottky diode to a…”
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The Relation Between Degradation Under DC and RF Stress Conditions by Scholten, A. J., Stephens, D., Smit, G. D. J., Sasse, G. T., Bisschop, J.

“…In this paper, we develop a method to derive degradation formulas for time-varying stress from the formulas for the constant-bias case, discuss its…”
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A surface-potential based model for GaN HEMTs in RF power amplifier applications by John, D L, Allerstam, F, Rodle, T, Murad, S K, Smit, G D J

“…We present the first surface-potential based compact model for RF GaN HEMTs and benchmark our work against both numerical simulations and device measurements…”
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Multi-Subband Monte Carlo simulations of ION degradation due to fin thickness fluctuations in FinFETs: Special Issue with Papers Selected from the Ultimate Integration on Silicon Conference, Ulis 2008 by SERRA, N, PALESTRI, P, SMIT, G. D. J, SELMI, L

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The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications by Scholten, A.J., Smit, G.D.J., De Vries, B.A., Tiemeijer, L.F., Croon, J.A., Klaassen, D.B.M., van Langevelde, R., Xin Li, Weimin Wu, Gildenblat, G.

“…The surface-potential-based compact MOS model PSP is reviewed with special emphasis to features of interest to analog and RF designers. Various aspects of the…”
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Multi-Subband Monte Carlo simulations of I ON degradation due to fin thickness fluctuations in FinFETs by Serra, N., Palestri, P., Smit, G.D.J., Selmi, L.

“…The impact of fin thickness nonuniformities on carrier transport in n-type FinFETs is analyzed with a Multi-Subband Monte Carlo technique, which allows for an…”
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Analysis and Prediction of Structural Motifs in the Glycolytic Enzymes [and Discussion] by Sternberg, M. J. E., Cohen, F. E., Taylor, W. R., Feldmann, R. J., Smit, J. D. G.

“…Protein crystallography has determined the three-dimensional structures of 10 of the 13 enzymes of the glycolytic pathway. Diagrams and details of these enzyme…”
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The Low-Resolution Structure of Human Muscle Aldolase [and Discussion] by Millar, J. R., Shaw, P. J., Stammers, D. K., Watson, H. C., Smit, J. D. G.

“…The three-dimensional structure of human muscle aldolase has been solved at 5 Å resolution with the use of two isomorphous heavy atom derivatives. The enzyme's…”
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Haemoglobin crystals in the midgut of the tick Ornithodorus moubata Murray by SMIT, J. D. G, GRANDJEAN, O, GUGGENHEIM, R, WINTERHALTER, K. H

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Group-theoretical analysis of double acceptors in a magnetic field: Identification of the Si : B + ground state by Smit, G. D. J., Rogge, S., Caro, J., Klapwijk, T. M.

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PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs by Wu, W., Li, X., Gildenblat, G., Workman, G., Veeraraghavan, S., McAndrew, C., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., Watts, J.

“…This paper reports recent progress on partially depleted (PD) SOI modeling using a surface potential based approach. The new model, called PSP-SOI, is…”
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The crystal structure of fructose-1,6-bisphosphate aldolase from Drosophila melanogaster at 2.5 Å resolution by HESTER, G, BRENNER-HOLZACH, O, ROSSI, F. A, STRUCK-DONATZ, M, WINTERHALTER, K. H, SMIT, J. D. G, PIONTEK, K

“…The structure of fructose-1,6-bisphosphate aldolase from Drosophila melanogaster has been determined by X-ray diffraction at 2.5 A resolution. The insect…”
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Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics by Smit, G. D. J., Rogge, S., Caro, J., Klapwijk, T. M.

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