Search Results - "Smeeton, T. M."

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope by Smeeton, T. M., Kappers, M. J., Barnard, J. S., Vickers, M. E., Humphreys, C. J.

“…InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution…”
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Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy by Smeeton, T. M., Kappers, M. J., Barnard, J. S., Vickers, M. E., Humphreys, C. J.

“…A set of InxGa1−xN/GaN single quantum wells (SQWs) were analysed using X‐ray reflectivity (XRR), high resolution X‐ray diffraction (HRXRD) and high resolution…”
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Exciton localization in InGaN/GaN single quantum well structures by Graham, D. M., Vala, A. Soltani, Dawson, P., Godfrey, M. J., Kappers, M. J., Smeeton, T. M., Barnard, J. S., Humphreys, C. J., Thrush, E. J.

“…We have performed a detailed investigation of the low temperature (T = 6 K) photoluminescence spectra and recombination lifetimes of localized excitons in a…”
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The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy by Smeeton, T M, Humphreys, C J, Barnard, J S, Kappers, M J

“…High-resolution transmission electron microscope (HRTEM) lattice fringe images and lattice parameter maps are used to reveal the rapid modification of InGaN…”
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Sensitisation of erbium luminescence in erbium-implanted alumina by Kenyon, A.J., Chryssou, C.E., Smeeton, T.M., Humphreys, C.J., Hole, D.E.

“…Experimental evidence of an efficient broadband sensitisation mechanism in erbium-implanted alumina is presented. Alumina thin films were deposited by…”
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Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings by Rossetti, M., Smeeton, T. M., Tan, W.-S., Kauer, M., Hooper, S. E., Heffernan, J., Xiu, H., Humphreys, C. J.

“…The degradation of InGaN∕GaN laser diodes grown by molecular beam epitaxy is analyzed by using surface mapping of the photoluminescence emission on a…”
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Performance and degradation characteristics of blue-violet laser diodes grown by molecular beam epitaxy by Tan, W. S., Kauer, M., Hooper, S. E., Smeeton, T. M., Bousquet, V., Rossetti, M., Heffernan, J., Xiu, H., Humphreys, C. J.

“…This paper reports the state of the art performance for blue–violet laser diodes (LD) grown by molecular beam epitaxy. Improvements in device design and growth…”
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Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots by Sénès, M., Smith, K.L., Smeeton, T.M., Hooper, S.E., Heffernan, J.

“…We report photoluminescence and time-resolved photoluminescence experiments on In x Ga 1− x N/GaN quantum dots grown by plasma-assisted molecular beam epitaxy…”
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Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina by Chryssou, C. E., Kenyon, A. J., Smeeton, T. M., Humphreys, C. J., Hole, D. E.

“…Experimental evidence of an efficient broadband sensitization mechanism in erbium-implanted alumina is presented. Alumina thin films were deposited by…”
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Degradation of In Ga N ∕ Ga N laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings by Rossetti, M., Smeeton, T. M., Tan, W.-S., Kauer, M., Hooper, S. E., Heffernan, J., Xiu, H., Humphreys, C. J.

“…The degradation of In Ga N ∕ Ga N laser diodes grown by molecular beam epitaxy is analyzed by using surface mapping of the photoluminescence emission on a…”
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Atomic force microscopy analysis of cleaved facets in III-nitride laser diodes grown on free-standing GaN substrates by Smeeton, T. M., Bousquet, V., Hooper, S. E., Kauer, M., Heffernan, J.

“…The cleaved { 1 1 ¯ 00 } mirror facets of III-nitride ridge waveguide laser diodes grown on free-standing GaN substrates have been characterized using atomic…”
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Erratum: Strong carrier confinement in In x Ga 1 − x N ∕ Ga N quantum dots grown by molecular beam epitaxy [Phys. Rev. B 75 , 045314 (2007)] by Sénès, M., Smith, K. L., Smeeton, T. M., Hooper, S. E., Heffernan, J.

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Strong carrier confinement in In x Ga 1 − x N ∕ Ga N quantum dots grown by molecular beam epitaxy by Sénès, M., Smith, K. L., Smeeton, T. M., Hooper, S. E., Heffernan, J.

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