Top-gated Thin Film FETs Fabricated from Arrays of Self-aligned Semiconducting Carbon Nanotubes

In this paper, we present a new approach for making active carbon nanotube (CNT) electrical devices and demonstrate the first aligned CNT array field effect transistors (FET) from 99% pure separated semiconducting nanotubes. Through evaporation-driven deposition of predominantly semiconducting nanot...

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Bibliographic Details
Published in:	2008 Device Research Conference pp. 149 - 150
Main Authors:	Engel, M., Small, J.P., Steiner, M., Yu-Ming Lin, Green, A.A., Hersam, M.C., Avouris, P.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2008
Subjects:	Carbon nanotubes Fabrication FETs Plastic films Production Semiconductivity Semiconductor nanotubes Semiconductor thin films Sputtering Thin film devices
Online Access:	Get full text
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Summary:	In this paper, we present a new approach for making active carbon nanotube (CNT) electrical devices and demonstrate the first aligned CNT array field effect transistors (FET) from 99% pure separated semiconducting nanotubes. Through evaporation-driven deposition of predominantly semiconducting nanotubes from the liquid phase, we have fabricated aligned, thin-film CNT devices with high on-state currents. The fabrication scheme presented here provides a versatile production method translatable to other substrates such as flexible plastics.
ISBN:	9781424419425 1424419425
ISSN:	1548-3770 2640-6853
DOI:	10.1109/DRC.2008.4800778