Search Results - "Slobodskyy, T"

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  1. 1

    Voltage-controlled spin selection in a magnetic resonant tunneling diode by Slobodskyy, A, Gould, C, Slobodskyy, T, Becker, C R, Schmidt, G, Molenkamp, L W

    Published in Physical review letters (20-06-2003)
    “…We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the…”
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    Journal Article
  2. 2

    Density limits of high temperature and multiple local droplet etching on AlAs by Kerbst, J., Heyn, Ch, Slobodskyy, T., Hansen, W.

    Published in Journal of crystal growth (01-03-2014)
    “…The density of nanoholes created by self-assembled Al droplet etching of AlAs surfaces during molecular beam epitaxy is studied. We find a clear decrease of…”
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    Journal Article
  3. 3

    Strain relaxation in metamorphic InAlAs buffers by Landgraf, B., Slobodskyy, T., Heyn, Ch, Hansen, W.

    “…The strain relaxation in a metamorphic InxAl1−xAs buffer placed on top of an AlAs/GaAs superlattice (SL) was analyzed using high-resolution X-ray diffraction…”
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    Journal Article
  4. 4

    Circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots by Astakhov, G V, Kiessling, T, Platonov, A V, Slobodskyy, T, Mahapatra, S, Ossau, W, Schmidt, G, Brunner, K, Molenkamp, L W

    Published in Physical review letters (20-01-2006)
    “…We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under…”
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    Journal Article
  5. 5

    Remanent zero field spin splitting of self-assembled quantum dots in a paramagnetic host by Gould, C, Slobodskyy, A, Supp, D, Slobodskyy, T, Grabs, P, Hawrylak, P, Qu, F, Schmidt, G, Molenkamp, L W

    Published in Physical review letters (07-07-2006)
    “…We report on the observation of a finite spin splitting at zero magnetic field in resonant tunneling experiments on CdSe self-assembled quantum dots in a…”
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    Journal Article
  6. 6

    Strain field in (Ga,Mn)As/GaAs periodic wires revealed by coherent X-ray diffraction by Minkevich, A. A, Fohtung, E, Slobodskyy, T, Riotte, M, Grigoriev, D, Metzger, T, Irvine, A. C, Novák, V, Holý, V, Baumbach, T

    Published in Europhysics letters (01-06-2011)
    “…An experimental and simulation study of the full strain tensor and of strain-induced magnetocrystalline anisotropies in arrays of lithographically patterned…”
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    Journal Article
  7. 7

    Investigation of buried quantum dots using grazing incidence X-ray diffraction by Schroth, P., Slobodskyy, T., Grigoriev, D., Minkevich, A., Riotte, M., Lazarev, S., Fohtung, E., Hu, D.Z., Schaadt, D.M., Baumbach, T.

    “…Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction…”
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    Journal Article
  8. 8

    X-ray study of surface layers of air-annealed Be12Ti and Be12V samples using synchrotron radiation by Kurinskiy, P., Moeslang, A., Chakin, V., Slobodskyy, T., Minkevich, A.A., Baumbach, T., Dorn, Ch, Goraieb, A.A.

    Published in Fusion engineering and design (01-08-2012)
    “…► Surface layers of air-annealed Be12Ti and Be12V samples were investigated. ► X-ray diffraction analysis using synchrotron radiation allowed the study of…”
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    Journal Article
  9. 9

    Interaction between Mn ions and free carriers in quantum wells with asymmetrical semimagnetic barriers by Zayachuk, D. M, Slobodskyy, T, Astakhov, G. V, Gould, C, Schmidt, G, Ossau, W, Molenkamp, L. W

    Published in Europhysics letters (01-09-2010)
    “…Investigations of photoluminescence (PL) in the magnetic field of quantum structures based on the ZnSe quantum well with asymmetrical ZnBeMnSe and ZnBeSe…”
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    Journal Article
  10. 10

    Micro-patterned RTDs: Fabrication details and device performance by Borzenko, T., Slobodskyy, T., Supp, D., Gould, C., Schmidt, G., Molenkamp, L.W.

    Published in Microelectronic engineering (01-05-2007)
    “…Resonant tunnelling diode (RTD) structures of complex design can be fabricated from diluted magnetic semiconductors (ZnSe-based material) grown by molecular…”
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    Journal Article Conference Proceeding
  11. 11

    Molecular-beam epitaxy of (Zn,Mn)Se on Si(100) by Slobodskyy, T., Rüster, C., Fiederling, R., Keller, D., Gould, C., Ossau, W., Schmidt, G., Molenkamp, L. W.

    Published in Applied physics letters (20-12-2004)
    “…We have investigated the growth by molecular-beam epitaxy of the II–VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth…”
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    Journal Article
  12. 12

    Magnetic resonant tunnelling diodes as voltage-controlled spin selectors by Gould, C., Slobodskyy, A., Slobodskyy, T., Grabs, P., Becker, C. R., Schmidt, G., Molenkamp, L. W.

    Published in Physica Status Solidi (b) (01-03-2004)
    “…We study the transport characteristics of all II–VI semiconductor resonant tunneling diodes made from the (Zn,Mn,Be)Se material system and with a quantum well…”
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    Journal Article Conference Proceeding
  13. 13

    Density limits of high temperature and multiple local droplet etching on AlAs by Kerbst, J, Heyn, Ch, Slobodskyy, T, Hansen, W

    Published in Journal of crystal growth (01-03-2014)
    “…The density of nanoholes created by self-assembled Al droplet etching of AlAs surfaces during molecular beam epitaxy is studied. We find a clear decrease of…”
    Get full text
    Journal Article
  14. 14

    Asymmetric skew X-ray diffraction at fixed incidence angle: application to semiconductor nano-objects by Grigoriev, D., Lazarev, S., Schroth, P., Minkevich, A.A., Köhl, M., Slobodskyy, T., Helfrich, M., Schaadt, D.M., Aschenbrenner, T., Hommel, D., Baumbach, T.

    Published in Journal of applied crystallography (01-06-2016)
    “…A procedure for obtaining three‐dimensionally resolved reciprocal‐space maps in a skew X‐ray diffraction geometry is described. The geometry allows tuning of…”
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    Journal Article
  15. 15

    In-depth analysis of the CuIn1−xGaxSe2 film for solar cells, structural and optical characterization by Slobodskyy, A., Slobodskyy, T., Ulyanenkova, T., Doyle, S., Powalla, M., Baumbach, T., Lemmer, U.

    Published in Applied physics letters (20-12-2010)
    “…Space-resolved x-ray diffraction measurements of gradient-etched CuIn1−xGaxSe2 (CIGS) solar cells provide information about stress and texture depth profiles…”
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    Journal Article
  16. 16
  17. 17

    Fermi edge singularity in II-VI semiconductor resonant tunneling structures by Rüth, M., Slobodskyy, T., Gould, C., Schmidt, G., Molenkamp, L. W.

    Published in Applied physics letters (03-11-2008)
    “…We report on the observation of Fermi edge enhanced resonant tunneling transport in a II-VI semiconductor heterostructure. The resonant transport through a…”
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    Journal Article
  18. 18

    Resonant tunneling diode with spin polarized injector by Slobodskyy, A., Gould, C., Slobodskyy, T., Schmidt, G., Molenkamp, L. W., Sánchez, D.

    Published in Applied physics letters (19-03-2007)
    “…The authors investigate the current-voltage characteristics of a II-VI semiconductor resonant tunneling diode coupled to a diluted magnetic semiconductor…”
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    Journal Article
  19. 19
  20. 20

    In-depth analysis of the CuIn 1 − x Ga x Se 2 film for solar cells, structuraland optical characterization by Slobodskyy, A., Slobodskyy, T., Ulyanenkova, T., Doyle, S., Powalla, M., Baumbach, T., Lemmer, U.

    Published in Applied physics letters (23-12-2010)
    “…Space-resolved x-ray diffraction measurements of gradient-etched CuIn 1 − x Ga x Se 2 (CIGS) solar cells provide information about stress and texture depth…”
    Get full text
    Journal Article