Search Results - "Slobodskyy, T"
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Voltage-controlled spin selection in a magnetic resonant tunneling diode
Published in Physical review letters (20-06-2003)“…We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the…”
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Density limits of high temperature and multiple local droplet etching on AlAs
Published in Journal of crystal growth (01-03-2014)“…The density of nanoholes created by self-assembled Al droplet etching of AlAs surfaces during molecular beam epitaxy is studied. We find a clear decrease of…”
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3
Strain relaxation in metamorphic InAlAs buffers
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05-06-2012)“…The strain relaxation in a metamorphic InxAl1−xAs buffer placed on top of an AlAs/GaAs superlattice (SL) was analyzed using high-resolution X-ray diffraction…”
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Circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots
Published in Physical review letters (20-01-2006)“…We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under…”
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Remanent zero field spin splitting of self-assembled quantum dots in a paramagnetic host
Published in Physical review letters (07-07-2006)“…We report on the observation of a finite spin splitting at zero magnetic field in resonant tunneling experiments on CdSe self-assembled quantum dots in a…”
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6
Strain field in (Ga,Mn)As/GaAs periodic wires revealed by coherent X-ray diffraction
Published in Europhysics letters (01-06-2011)“…An experimental and simulation study of the full strain tensor and of strain-induced magnetocrystalline anisotropies in arrays of lithographically patterned…”
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Investigation of buried quantum dots using grazing incidence X-ray diffraction
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05-06-2012)“…Self-organized, buried InAs quantum dots covered by an AlAs diffusion barrier were investigated under UHV conditions using grazing incidence X-ray diffraction…”
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X-ray study of surface layers of air-annealed Be12Ti and Be12V samples using synchrotron radiation
Published in Fusion engineering and design (01-08-2012)“…► Surface layers of air-annealed Be12Ti and Be12V samples were investigated. ► X-ray diffraction analysis using synchrotron radiation allowed the study of…”
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Interaction between Mn ions and free carriers in quantum wells with asymmetrical semimagnetic barriers
Published in Europhysics letters (01-09-2010)“…Investigations of photoluminescence (PL) in the magnetic field of quantum structures based on the ZnSe quantum well with asymmetrical ZnBeMnSe and ZnBeSe…”
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Micro-patterned RTDs: Fabrication details and device performance
Published in Microelectronic engineering (01-05-2007)“…Resonant tunnelling diode (RTD) structures of complex design can be fabricated from diluted magnetic semiconductors (ZnSe-based material) grown by molecular…”
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Journal Article Conference Proceeding -
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Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)
Published in Applied physics letters (20-12-2004)“…We have investigated the growth by molecular-beam epitaxy of the II–VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth…”
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12
Magnetic resonant tunnelling diodes as voltage-controlled spin selectors
Published in Physica Status Solidi (b) (01-03-2004)“…We study the transport characteristics of all II–VI semiconductor resonant tunneling diodes made from the (Zn,Mn,Be)Se material system and with a quantum well…”
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Journal Article Conference Proceeding -
13
Density limits of high temperature and multiple local droplet etching on AlAs
Published in Journal of crystal growth (01-03-2014)“…The density of nanoholes created by self-assembled Al droplet etching of AlAs surfaces during molecular beam epitaxy is studied. We find a clear decrease of…”
Get full text
Journal Article -
14
Asymmetric skew X-ray diffraction at fixed incidence angle: application to semiconductor nano-objects
Published in Journal of applied crystallography (01-06-2016)“…A procedure for obtaining three‐dimensionally resolved reciprocal‐space maps in a skew X‐ray diffraction geometry is described. The geometry allows tuning of…”
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15
In-depth analysis of the CuIn1−xGaxSe2 film for solar cells, structural and optical characterization
Published in Applied physics letters (20-12-2010)“…Space-resolved x-ray diffraction measurements of gradient-etched CuIn1−xGaxSe2 (CIGS) solar cells provide information about stress and texture depth profiles…”
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Fermi edge singularity in II-VI semiconductor resonant tunneling structures
Published in Applied physics letters (03-11-2008)“…We report on the observation of Fermi edge enhanced resonant tunneling transport in a II-VI semiconductor heterostructure. The resonant transport through a…”
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Resonant tunneling diode with spin polarized injector
Published in Applied physics letters (19-03-2007)“…The authors investigate the current-voltage characteristics of a II-VI semiconductor resonant tunneling diode coupled to a diluted magnetic semiconductor…”
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In-depth analysis of the CuIn 1 − x Ga x Se 2 film for solar cells, structuraland optical characterization
Published in Applied physics letters (23-12-2010)“…Space-resolved x-ray diffraction measurements of gradient-etched CuIn 1 − x Ga x Se 2 (CIGS) solar cells provide information about stress and texture depth…”
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