Search Results - "Sleeckx, Erik"

Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry by Selvaraja, Shankar Kumar, Sleeckx, Erik, Schaekers, Marc, Bogaerts, Wim, Thourhout, Dries Van, Dumon, Pieter, Baets, Roel

“…We report the fabrication of low-loss amorphous silicon photonic wires deposited by plasma enhanced chemical vapor deposition. Single mode photonic wires were…”
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Influence of Si wafer thinning processes on (sub)surface defects by Inoue, Fumihiro, Jourdain, Anne, Peng, Lan, Phommahaxay, Alain, De Vos, Joeri, Rebibis, Kenneth June, Miller, Andy, Sleeckx, Erik, Beyne, Eric, Uedono, Akira

“…[Display omitted] •Mono-vacancy free Si-thinning can be accomplished by combining several thinning techniques.•The grinding damage needs to be removed prior to…”
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Edge trimming for surface activated dielectric bonded wafers by Inoue, Fumihiro, Jourdain, Anne, Visker, Jakob, Peng, Lan, Moeller, Berthold, Yokoyama, Kaori, Phommahaxay, Alain, Rebibis, Kenneth June, Miller, Andy, Beyne, Eric, Sleeckx, Erik

“…The impact of the edge trimming process on permanently bonded wafers is described. The edge trimming process is a blade sawing process applied on the Si wafer…”
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Extremely Low-Force Debonding of Thinned CMOS Substrate by Laser Release of a Temporary Bonding Material by Phommahaxay, Alain, Potoms, Goedele, Verbinnen, Greet, Sleeckx, Erik, Beyer, Gerald, Beyne, Eric, Guerrero, Alice, Dongshun Bai, Xiao Liu, Yess, Kim, Arnold, Kim, Spiess, Walter, Griesbach, Tim, Rapps, Thomas, Lutter, Stefan

“…Over the past few years, temporary bonding has spread together with the development of 3D stacked IC (SIC) technology. Maturity of the various processes has…”
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Characterization of Extreme Si Thinning Process for Wafer-to-Wafer Stacking by Inoue, Fumihiro, Jourdain, Anne, De Vos, Joeri, Sleeckx, Erik, Beyne, Eric, Patel, Jash, Ansell, Oliver, Ashraf, Huma, Hopkins, Janet, Thomas, Dave, Uedono, Akira

“…Wafer-to-wafer 3D integration has a potential to minimize the Si thickness, which enables us to connect multiple wafers with significantly scaled through-Si…”
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Highly efficient grating coupler between optical fiber and silicon photonic circuit by Selvaraja, S.K., Vermeulen, D., Schaekers, M., Sleeckx, E., Bogaerts, W., Roelkens, G., Dumon, P., Van Thourhout, D., Baets, R.

“…We report on a highly efficient grating coupler between an optical fiber and a silicon photonic circuit. Using layers of Si/SiO 2 as a Bragg mirror and…”
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Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems by Phommahaxay, Alain, Suhard, Samuel, Bex, Pieter, Iacovo, Serena, Slabbekoorn, John, Inoue, Fumihiro, Peng, Lan, Kennes, Koen, Sleeckx, Erik, Beyer, Gerald, Beyne, Eric

“…The recent developments of wafer-to-wafer bonding technology based on direct assembly of inorganic dielectric materials is offering a path for the continuous…”
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Advanced Dicing Technologies for Combination of Wafer to Wafer and Collective Die to Wafer Direct Bonding by Inoue, Fumihiro, Phommahaxay, Alain, Podpod, Arnita, Suhard, Samuel, Hoshino, Hitoshi, Moeller, Berthold, Sleeckx, Erik, June Rebibis, Kenneth, Miller, Andy, Beyne, Eric

“…Feasibility study of alternative dicing technologies for collective die to wafer direct bonding combined with wafer to wafer direct bonded dies has been…”
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Direct Bonding of low Temperature Heterogeneous Dielectrics by Iacovo, Serena, Peng, lan, Phommahaxay, Alain, Inoue, Fumihiro, Verdonck, Patrick, Kim, Soon-Wook, Sleeckx, Erik, Miller, Andy, Beyer, Gerald, Beyne, Eric

“…Nowadays, the direct bonding process is embedded in a BEOL manufacturing process where the maximum temperature is 400C. For certain applications there is the…”
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Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy by Inoue, Fumihiro, Peng, Lan, Iacovo, Serena, Nagano, Fuya, Sleeckx, Erik, Beyer, Gerald, Uedono, Akira, Beyne, Eric

“…Defects at (sub)surface of dielectric layers as bonding surface are investigated by using positron annihilation spectroscopy. The defect inspection technique…”
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Advances in Temporary Carrier Technology for High-Density Fan-Out Device Build-up by Podpod, Arnita, Phommahaxay, Alain, Bex, Pieter, Slabbekoorn, John, Bertheau, Julien, Salahoueldhadj, Abdellah, Sleeckx, Erik, Miller, Andy, Beyer, Gerald, Beyne, Eric, Guerrero, Alice, Yess, Kim, Arnold, Kim

“…As the need for higher degrees of function integration on chips continues to rise, chip-to-chip connection density exponentially increases. The continuous push…”
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Thermal Compression Bonding: Understanding Heat Transfer by in Situ Measurements and Modeling by Bex, Pieter, Teng Wang, Lofrano, Melina, Cherman, Vladimir, Capuz, Giovanni, Sleeckx, Erik, Beyne, Eric

“…Thermal compression bonding (TCB) is becoming an increasingly important process step in the assembly of advanced components such as fine pitch flip chip…”
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Advances in Temporary Bonding and Release Technology for Ultrathin Substrate Processing and High-Density Fan-Out Device Build-up by Phommahaxay, Alain, Podpod, Arnita, Slabbekoorn, John, Sleeckx, Erik, Beyer, Gerald, Beyne, Eric, Guerrero, Alice, Dongshun Bai, Arnold, Kim

“…Thin substrate handling has become one of the cornerstone technologies that enabled the development of 3D stacked ICs over the past years. Temporary wafer…”
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The Growing Application Field of Laser Debonding: From Advanced Packaging to Future Nanoelectronics by Phommahaxay, Alain, Beyer, Gerald, Radu, Iuliana, Beyne, Eric, Guerrero, Alice, Prenger, Luke, Yess, Kim, Arnold, Kim, Tussing, Sebastian, Spiess, Walter, Rapps, Thomas, Kennes, Koen, Lutter, Stefan, Podpod, Arnita, Brems, Steven, Slabbekoorn, John, Sleeckx, Erik, Huyghebaert, Cedric, Asselberghs, Inge, Miller, Andy

“…Thin substrate handling has become one of the cornerstone technologies that enabled the development of 3D stacked ICs over the past years. Temporary wafer…”
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Pre-bonding Characterization of SiCN Enabled Wafer Stacking by Peng, Lan, Kim, Soon-Wook, Iacovo, Serena, Inoue, Fumihiro, De Vos, Joeri, Sleeckx, Erik, Miller, Andy, Beyer, Gerald, Beyne, Eric

“…We present recent study in pre-bonding characterizations for SiCN-to-SiCN wafer stacking. An alternative approach is evaluated to quantify surface hydroxyl…”
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Extreme Thinned-Wafer Bonding Using Low Temperature Curable Polyimide for Advanced Wafer Level Integrations by Bertheau, Julien, Inoue, Fumihiro, Phommahaxay, Alain, Peng, Lan, Iacovo, Serena, Rassoul, Nouredine, Sleeckx, Erik, Rebibs, Kenneth, Miller, Andy, Beyer, Gerald, Beyne, Eric, Nakamura, Atsushi

“…Extreme thinned wafer transfer technologies have been demonstrated by combining a selected set of temporary and permanent bonding materials. The extreme…”
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A Unique Temporary Bond Solution Based on a Polymeric Material Tacky at Room Temperature and Highly Thermally Resistant Application Extension from 3D-SIC to FO-WLP by Phommahaxay, Alain, Potoms, Goedele, Bertheau, Julien, Bex, Pieter, Duval, Fabrice, Podpod, Arnita, Teng Wang, Verbinnen, Greet, Beyer, Gerald, Sleeckx, Erik, Beyne, Eric, Nakamura, Atsushi, Kamochi, Yoshitaka

“…Among the technological developments pushed by the adoption of Through Silicon Vias and 3D Stacked IC technologies, wafer thinning on a temporary carrier has…”
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Advances in Thin Wafer Debonding and Ultrathin 28-nm FinFET Substrate Transfer by Phommahaxay, Alain, Jourdain, Anne, Potoms, Goedele, Verbinnen, Greet, Sleeckx, Erik, Beyer, Gerald, Beyne, Eric, Guerrero, Alice, Dongshun Bai, Yess, Kim, Arnold, Kim

“…Over the past few years, temporary bonding has expanded together with the development of 3D stacked IC (SIC) technology. As maturity of the various processes…”
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W2W permanent stacking for 3D system integration by Lan Peng, Soon-Wook Kim, Soules, Michael, Gabriel, Markus, Zoberbier, Margarete, Sleeckx, Erik, Struyf, Herbert, Miller, Andy, Beyne, Eric

“…In this paper, we present advances in 300mm wafer-to-wafer (W2W) oxide-oxide bonding for high density 3D interconnect application. A CMOS compatible low…”
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Structural and optical properties of amorphous germanium chalcogenide films prepared by PECVD by Sleeckx, Erik

“…This PhD consists of two parts: (1) the preparation by plasma-enhanced chemical vapour deposition (PECVD) and characterization of amorphous Ge-S-, Ge-Se- and…”
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