Search Results - "Slaughter, J.M."

Materials for Magnetoresistive Random Access Memory by Slaughter, J.M.

“…MRAM technology is based on the storage of data in stable magnetic states using devices that have a large magnetoresistance effect, so that the data can be…”
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Magnetoresistive random access memory using magnetic tunnel junctions by Tehrani, S., Butcher, B., Smith, K., Grynkewich, G., Slaughter, J.M., Deherrera, M., Engel, B.N., Rizzo, N.D., Salter, J., Durlam, M., Dave, R.W., Janesky, J.

“…Magnetoresistive random access memory (MRAM) technology combines a spintronic device with standard silicon-based microelectronics to obtain a combination of…”
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A 4-Mb toggle MRAM based on a novel bit and switching method by Engel, B.N., Akerman, J., Butcher, B., Dave, R.W., DeHerrera, M., Durlam, M., Grynkewich, G., Janesky, J., Pietambaram, S.V., Rizzo, N.D., Slaughter, J.M., Smith, K., Sun, J.J., Tehrani, S.

“…A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five…”
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Recent developments in magnetic tunnel junction MRAM by Tehrani, S., Engel, B., Slaughter, J.M., Chen, E., DeHerrera, M., Durlam, M., Naji, P., Whig, R., Janesky, J., Calder, J.

“…We summarize our progress on Magnetoresistive Random Access Memory (MRAM) based on Magnetic Tunnel Junctions (MTJ). We have demonstrated MTJ material in the…”
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A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects by Durlam, M., Naji, P.J., Omair, A., DeHerrera, M., Calder, J., Slaughter, J.M., Engel, B.N., Rizzo, N.D., Grynkewich, G., Butcher, B., Tracy, C., Smith, K., Kyler, K.W., Ren, J.J., Molla, J.A., Feil, W.A., Williams, R.G., Tehrani, S.

“…A low-power 1-Mb magnetoresistive random access memory (MRAM) based on a one-transistor and one-magnetic tunnel junction (1T1MTJ) bit cell is demonstrated…”
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Exchange coupling control and thermal endurance of synthetic antiferromagnet structures for MRAM by Pietambaram, S.V., Janesky, J., Dave, R.W., Sun, J.J., Steiner, G., Slaughter, J.M.

“…Synthetic antiferromagnet (SAF) structures are a key element of TMR and GMR read heads and MRAM devices. Control of the SAF coupling strength and thermal…”
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The science and technology of magnetoresistive tunneling memory by Engel, B.N., Rizzo, N.D., Janesky, J., Slaughter, J.M., Dave, R., DeHerrera, M., Durlam, M., Tehrani, S.

“…Rapid advances in portable communication and computing systems are creating an increasing demand for nonvolatile random access memory that is both high-density…”
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Intrinsic Reliability of AlOx-Based Magnetic Tunnel Junctions by Akerman, J., DeHerrera, M., Slaughter, J.M., Dave, R., Sun, J.J., Martin, J.T., Tehrani, S.

“…We present a detailed investigation into the intrinsic tunnel barrier reliability in AlOx-based magnetic tunnel junctions (MTJs) as a function of aluminum…”
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First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache Applications by Wu, H., Katragadda, V., Evarts, E., Edwards, E., Southwick, R., Dutta, A., Lauer, G., Mehta, V., Johnson, R., van der Straten, O., Reznicek, A., Wordeman, M., Rizzolo, M., Patlolla, R., Metzler, D., Yang, C., Edelstein, D., Canaperi, D., Teehan, S., Slaughter, J.M., Worledge, D.C.

“…This work provides the first experimental demonstration of data scrubbing effectiveness for MRAM, using an 80 Mb array with 40 nm critical dimension (CD). We…”
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Magnetostatic interactions between sub-micrometer patterned magnetic elements by Janesky, J., Rizzo, N.D., Savtchenko, L., Engel, B., Slaughter, J.M., Tehrani, S.

“…We have investigated the effect of the magnetostatic interaction field between submicrometer patterned magnetic elements in arrays (/spl sim/10/sup 8/…”
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Progress and outlook for MRAM technology by Tehrani, S., Slaughter, J.M., Chen, E., Durlam, M., Shi, J., DeHerren, M.

“…We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM),a semiconductor memory with…”
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MgO-based tunnel junction material for high-speed toggle magnetic random access memory by Dave, Renu W., Steiner, G., Slaughter, J. M., Sun, J. J., Craigo, B., Pietambaram, S., Smith, K., Grynkewich, G., DeHerrera, M., Akerman, J., Tehrani, S.

“…We report the first demonstration of a magnetoresistive random access memory (MRAM) circuit incorporating MgO-based magnetic tunnel junction (MTJ) material for…”
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Recent Advances in MRAM Technology by Slaughter, J.M.

“…In this paper we review recent progress, present specifics of Freescale's commercial MRAM device, and discuss the future outlook for MRAM technology, including…”
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Criteria for ferromagnetic–insulator–ferromagnetic tunneling by Åkerman, Johan J., Escudero, R., Leighton, C., Kim, S., Rabson, D.A., Dave, Renu Whig, Slaughter, J.M., Schuller, Ivan K.

“…The Rowell criteria, commonly used to identify tunneling in magnetic tunnel junctions (MTJ), are scrutinized. While neither the exponential-thickness…”
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MRAM Memory for Embedded and Stand Alone Systems by Durlam, M., Chung, Y., DeHerrera, M., Engel, B.N., Grynkewich, G., Martino, B., Nguyen, B., Salter, J., Shah, P., Slaughter, J.M.

“…Magnetoresistive random access memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS resulting in high-speed read and write,…”
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Reliability of 4 Mbit MRAM by Akerman, J., Brown, P., Gajewski, D., Griswold, M., Janesky, J., Martin, M., Mekonnen, H., Nahas, J.J., Pietambaram, S., Slaughter, J.M., Tehrani, S.

“…Prior to our recent publication (J. Akerman et al, IEEE Trans. Dev. Mat. Rel. 4, p.428-435, 2004), little data on magnetoresistive random access memory (MRAM)…”
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Device performance in a fully functional 800MHz DDR3 spin torque magnetic random access memory by Janesky, J., Rizzo, N. D., Houssameddine, D., Whig, R., Mancoff, F. B., DeHerrera, M., Sun, J. J., Schneider, M., Chia, H. J., Aggarwal, S., Nagel, K., Deshpande, S., Andre, T., Alam, S., Tan, C. H., Slaughter, J. M., Hellmold, S., LoPresti, P.

“…With the recent sampling of Everspin Technologies spin torque magnetoresistive random access memory (ST-MRAM), the performance gap between the high speed…”
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Toggle MRAM: A highly-reliable Non-Volatile Memory by Durlam, M., Craigo, B., DeHerrera, M., Engel, B.N., Grynkewich, G., Huang, B., Janesky, J., Martin, M., Martino, B., Salter, J., Slaughter, J.M., Wise, L., Tehrani, S.

“…Magnetoresistive Random Access Memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS, resulting in high-speed read and…”
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Intrinsic Reliability of AlOx-based Magnetic Tunnel Junctions by Akerman, J., DeHerrera, M., Slaughter, J.M., Dave, R., Sun, J., Tehrani, S.

“…The intrinsic reliability of MTJs is studied via the ramped breakdown voltage (V bd ), which has the benefit of a much shorter measurement time than TDDB where…”
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High speed toggle MRAM with mgO-based tunnel junctions by Slaughter, J.M., Dave, R.W., Durlam, M., Kerszykowski, G., Smith, K., Nagel, K., Feil, B., Calder, J., DeHerrera, M., Garni, B., Tehrani, S.

“…We report here the first integration of a new generation of high magnetoresistance-ratio (MR) magnetic tunnel junction (MTJ) material with a 90 nm CMOS…”
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