Search Results - "Slapovskiy, D N"

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    Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer by Yu, Pavlov A, Tomosh, K N, Yu, Pavlov V, Slapovskiy, D N, Klekovkin, A V, Ivchenko, I A

    Published in Nanotechnologies in Russia (01-12-2022)
    “…The influence of the thickness of the barrier layer of a nitride heterostructure on the characteristics of field-effect transistors with high electron mobility…”
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    Journal Article
  2. 2

    The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures by Pavlov, A. Yu, Pavlov, V. Yu, Slapovskiy, D. N.

    Published in Technical physics letters (01-11-2017)
    “…Degradation of nonalloyed ohmic contacts with heavily doped GaN epitaxially grown to the heterostructures with two-dimensional electron gas has been…”
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    Journal Article
  3. 3

    Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures by Slapovskiy, D. N., Pavlov, A. Yu, Pavlov, V. Yu, Klekovkin, A. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2017)
    “…For the first time in Russia, the Si/Al/Ti/Au alloyed contact composition is investigated for the formation of ohmic contacts to AlGaN/GaN heterostructures…”
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    Journal Article
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    Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures by Pavlov, A. Yu, Pavlov, V. Yu, Slapovskiy, D. N., Arutyunyan, S. S., Fedorov, Yu. V., Mal’tsev, P. P.

    Published in Russian microelectronics (01-09-2017)
    “…A microwave field-effect transistor with nonalloyed ohmic contacts is fabricated using the technique of regrowing a heavily doped region under the contact…”
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    Journal Article
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