Search Results - "Slapovskiy, D N"
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Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer
Published in Nanotechnologies in Russia (01-12-2022)“…The influence of the thickness of the barrier layer of a nitride heterostructure on the characteristics of field-effect transistors with high electron mobility…”
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The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures
Published in Technical physics letters (01-11-2017)“…Degradation of nonalloyed ohmic contacts with heavily doped GaN epitaxially grown to the heterostructures with two-dimensional electron gas has been…”
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Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures
Published in Semiconductors (Woodbury, N.Y.) (01-04-2017)“…For the first time in Russia, the Si/Al/Ti/Au alloyed contact composition is investigated for the formation of ohmic contacts to AlGaN/GaN heterostructures…”
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Electrical and thermal properties of photoconductive antennas based on In x Ga1 – x As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
Published in Semiconductors (Woodbury, N.Y.) (01-09-2017)“…The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are…”
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5
Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures
Published in Russian microelectronics (01-09-2017)“…A microwave field-effect transistor with nonalloyed ohmic contacts is fabricated using the technique of regrowing a heavily doped region under the contact…”
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6
Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
Published in Semiconductors (Woodbury, N.Y.) (01-09-2017)“…The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are…”
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Electrical and thermal properties of photoconductive antennas based on In{sub x}Ga{sub 1–} {sub x}As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
Published in Semiconductors (Woodbury, N.Y.) (15-09-2017)“…The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are…”
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