Search Results - "Skotnicki, T"

Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors by Knap, W., Teppe, F., Meziani, Y., Dyakonova, N., Lusakowski, J., Boeuf, F., Skotnicki, T., Maude, D., Rumyantsev, S., Shur, M. S.

“…We report on experiments on photoresponse to sub-THz (120GHz) radiation of Si field-effect transistors (FETs) with nanometer and submicron gate lengths at…”
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Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power by Tauk, R., Teppe, F., Boubanga, S., Coquillat, D., Knap, W., Meziani, Y. M., Gallon, C., Boeuf, F., Skotnicki, T., Fenouillet-Beranger, C., Maude, D. K., Rumyantsev, S., Shur, M. S.

“…Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120 - 300 nm have been studied as room temperature plasma wave…”
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Toward quantitative modeling of silicon phononic thermocrystals by Lacatena, V., Haras, M., Robillard, J.-F., Monfray, S., Skotnicki, T., Dubois, E.

“…The wealth of technological patterning technologies of deca-nanometer resolution brings opportunities to artificially modulate thermal transport properties. A…”
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The end of CMOS scaling by Skotnicki, T., Hutchby, J.A., King, T., Wong, H.-S.P., Boeuf, F.

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Analysis of the thermal impact of a bimetal on the dynamic behavior of a thermal energy harvester by Boughaleb, J., Arnaud, A., Cottinet, P.J., Monfray, S., Quenard, S., Boeuf, F., Guyomar, D., Skotnicki, T.

“…•This paper proposes a theoretical dynamic thermal modelling of a thermal energy harvester strengthened by experimental measurements.•The model allows the…”
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Low work function thin film growth for high efficiency thermionic energy converter: Coupled Kelvin probe and photoemission study of potassium oxide by Morini, F., Dubois, E., Robillard, J. F., Monfray, S., Skotnicki, T.

“…Recent researches in thermal energy harvesting have revealed the remarkable efficiency of thermionic energy converters comprising very low work function…”
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FDSOI devices with thin BOX and ground plane integration for 32 nm node and below by Fenouillet-Beranger, C., Denorme, S., Perreau, P., Buj, C., Faynot, O., Andrieu, F., Tosti, L., Barnola, S., Salvetat, T., Garros, X., Cassé, M., Allain, F., Loubet, N., Pham-Nguyen, L., Deloffre, E., Gros-Jean, M., Beneyton, R., Laviron, C., Marin, M., Leyris, C., Haendler, S., Leverd, F., Gouraud, P., Scheiblin, P., Clement, L., Pantel, R., Deleonibus, S., Skotnicki, T.

“…In this paper we compare Fully-Depleted SOI (FDSOI) devices with different BOX (Buried Oxide) thicknesses with or without ground plane (GP). With a simple…”
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The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance by Skotnicki, T., Hutchby, J.A., Tsu-Jae King, Wong, H.-S.P., Boeuf, F.

“…The rapid cadence of metal-oxide semiconductor field-effect transistor (MOSFET) scaling, as seen in the new 2003 International Technology Roadmap for…”
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Phononic engineering of silicon using “dots on the fly” e-beam lithography and plasma etching by Lacatena, V., Haras, M., Robillard, J.-F., Monfray, S., Skotnicki, T., Dubois, E.

“…[Display omitted] •A fabrication process for nanoscale phononic crystals has been developed.•A “dots on the fly” technique is presented and its advantages are…”
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Silicon-on-nothing MOSFETs: performance, short-channel effects, and backgate coupling by Pretet, J., Monfray, S., Cristoloveanu, S., Skotnicki, T.

“…Silicon-on-nothing (SON) transistors with gate length varying from 0.25 /spl mu/m down to 80 nm exhibit excellent performance and scalability. The…”
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On the Limitations of Silicon for I-MOS Integration by Savio, A., Monfray, S., Charbuillet, C., Skotnicki, T.

“…This paper discusses the scalability of the supply voltage with the device length in silicon impact ionization MOS (I-MOS) transistors, by presenting results…”
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Coupling of a bimetallic strip heat engine with a piezoelectric transducer for thermal energy harvesting by Boughaleb, J., Arnaud, A., Monfray, S., Cottinet, P.J., Quenard, S., Boeuf, F., Guyomar, D., Skotnicki, T.

“…The field of energy harvesting became attractive due to the development of wireless sensors networks. Consequently many systems emerged to harvest wasted…”
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Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond by Andrieu, F, Weber, O, Mazurier, J, Thomas, O, Noel, J.-P, Fenouillet-Béranger, C, Mazellier, J.-P, Perreau, P, Poiroux, T, Morand, Y, Morel, T, Allegret, S, Loup, V, Barnola, S, Martin, F, Damlencourt, J.-F, Servin, I, Cassé, M, Garros, X, Rozeau, O, Jaud, M.-A, Cibrario, G, Cluzel, J, Toffoli, A, Allain, F, Kies, R, Lafond, D, Delaye, V, Tabone, C, Tosti, L, Brévard, L, Gaud, P, Paruchuri, V, Bourdelle, K K, Schwarzenbach, W, Bonnin, O, Nguyen, B.-Y, Doris, B, Bœuf, F, Skotnicki, T, Faynot, O

“…We fabricated CMOS devices on Ultra-Thin Boby and Buried Oxide SOI wafers using a single mid-gap gate stack. Excellent global, local and intrinsic V T…”
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Silicon-on-Nothing (SON)-an innovative process for advanced CMOS by Jurczak, M., Skotnicki, T., Paoli, M., Tormen, B., Martins, J., Regolini, J.L., Dutartre, D., Ribot, P., Lenoble, D., Pantel, R., Monfray, S.

“…A novel CMOS device architecture called silicon on nothing (SON) is proposed, which allows extremely thin (in the order of a few nanometers) buried dielectrics…”
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Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below by Fenouillet-Beranger, C., Perreau, P., Denorme, S., Tosti, L., Andrieu, F., Weber, O., Monfray, S., Barnola, S., Arvet, C., Campidelli, Y., Haendler, S., Beneyton, R., Perrot, C., de Buttet, C., Gros, P., Pham-Nguyen, L., Leverd, F., Gouraud, P., Abbate, F., Baron, F., Torres, A., Laviron, C., Pinzelli, L., Vetier, J., Borowiak, C., Margain, A., Delprat, D., Boedt, F., Bourdelle, K., Nguyen, B.-Y., Faynot, O., Skotnicki, T.

“…In this paper we explore for the first time the impact of an ultra-thin BOX (UTBOX) with and without ground plane (GP) on a 32 nm fully-depleted SOI (FDSOI)…”
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Requirements for ultra-thin-film devices and new materials for the CMOS roadmap by Fenouillet-Beranger, C., Skotnicki, T., Monfray, S., Carriere, N., Boeuf, F.

“…For the first time various devices architectures (bulk, SOI and SON) and process modules (metal gate, strained-Si channel) are compared in a consistent way…”
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Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs by Pham-Nguyen, L., Fenouillet-Beranger, C., Ghibaudo, G., Skotnicki, T., Cristoloveanu, S.

“…The electrical properties of front and back channels in advanced SOI MOSFETs (ultrathin film, short length, metal-gate/high-K stack, thin BOX) are used to…”
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Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond by Liu, Q, Yagishita, A, Loubet, N, Khakifirooz, A, Kulkarni, P, Yamamoto, T, Cheng, K, Fujiwara, M, Cai, J, Dorman, D, Mehta, S, Khare, P, Yako, K, Zhu, Y, Mignot, S, Kanakasabapathy, S, Monfray, S, Boeuf, F, Koburger, C, Sunamura, H, Ponoth, S, Reznicek, A, Haran, B, Upham, A, Johnson, R, Edge, L F, Kuss, J, Levin, T, Berliner, N, Leobandung, E, Skotnicki, T, Hane, M, Bu, H, Ishimaru, K, Kleemeier, W, Takayanagi, M, Doris, B, Sampson, R

“…We present UTBB devices with a gate length (L G ) of 25nm and competitive drive currents. The process flow features conventional gate-first high-k/metal and…”
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A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET by Fuchs, E., Dollfus, P., Le Carval, G., Barraud, S., Villanueva, D., Salvetti, F., Jaouen, H., Skotnicki, T.

“…A backscattering model suitable for compact modeling of nanoscale MOSFET is developed within the Landauer flux-scattering theory. To describe the…”
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Multi-Channel Field-Effect Transistor (MCFET)-Part I: Electrical Performance and Current Gain Analysis by Bernard, E., Ernst, T., Guillaumot, B., Vulliet, N., Coronel, P., Skotnicki, T., Deleonibus, S., Faynot, O.

“…Multi-Channel Field-Effect Transistor (MCFET) structures with ultralow I OFF (16 pA/mum) and high I ON (N: 2.27 mA/mum and P: 1.32 mA/mum) currents are…”
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