Search Results - "Skorupa, W."

Ferromagnetism and impurity band in a magnetic semiconductor: InMnP by Khalid, M., Weschke, Eugen, Skorupa, W., Helm, M., Zhou, Shengqiang

“…We have synthesized ferromagnetic InMnP, a member of the III-Mn-V ferromagnetic semiconductor family, by Mn ion implantation and pulsed laser annealing. Clear…”
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Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids by Saini, C. P, Barman, A, Banerjee, D, Grynko, O, Prucnal, S, Gupta, M, Phase, D. M, Sinha, A. K, Kanjilal, D, Skorupa, W, Kanjilal, A

“…Temperature-dependent photoluminescence (PL) of titanium oxide (TiO2) shows an evolution of blue emission when exposed to 50 keV Ar+ ions. The origin of…”
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Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy by Zhou, Shengqiang, Liu, Fang, Prucnal, S., Gao, Kun, Khalid, M., Baehtz, C., Posselt, M., Skorupa, W., Helm, M.

“…Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid…”
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Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing by Zhou, Shengqiang, Potzger, K., von Borany, J., Grötzschel, R., Skorupa, W., Helm, M., Fassbender, J.

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Formation and photoluminescence of GaAs1−xNx dilute nitride achieved by N-implantation and flash lamp annealing by Gao, Kun, Prucnal, S., Skorupa, W., Helm, M., Zhou, Shengqiang

“…In this paper, we present the fabrication of dilute nitride semiconductor GaAs1−xNx by nitrogen-ion-implantation and flash lamp annealing (FLA). N was…”
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Ge1−xSnx alloys synthesized by ion implantation and pulsed laser melting by Gao, Kun, Prucnal, S., Huebner, R., Baehtz, C., Skorupa, I., Wang, Yutian, Skorupa, W., Helm, M., Zhou, Shengqiang

“…The tunable bandgap and the high carrier mobility of Ge1−xSnx alloys stimulate a large effort for bandgap and strain engineering for Ge based materials using…”
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Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition by Rebohle, L., Braun, M., Wutzler, R., Liu, B., Sun, J. M., Helm, M., Skorupa, W.

“…We report on the bright green electroluminescence (EL) with power efficiencies up to 0.15% of SiO2-Tb2O3-mixed layers fabricated by atomic layer deposition and…”
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Superconducting state in a gallium-doped germanium layer at low temperatures by Herrmannsdörfer, T, Heera, V, Ignatchik, O, Uhlarz, M, Mücklich, A, Posselt, M, Reuther, H, Schmidt, B, Heinig, K-H, Skorupa, W, Voelskow, M, Wündisch, C, Skrotzki, R, Helm, M, Wosnitza, J

“…We demonstrate that the third elemental group-IV semiconductor, germanium, exhibits superconductivity at ambient pressure. Using advanced doping and annealing…”
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Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates by Heera, V., Fiedler, J., Skorupa, W.

“…We report on large negative and positive magnetoresistance in inhomogeneous, insulating Si:Ga films below a critical temperature of about 7 K. The…”
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Fe implanted ferromagnetic ZnO by Potzger, K., Zhou, Shengqiang, Reuther, H., Mücklich, A., Eichhorn, F., Schell, N., Skorupa, W., Helm, M., Fassbender, J., Herrmannsdörfer, T., Papageorgiou, T. P.

“…Room-temperature ferromagnetism has been induced within ZnO single crystals by implant doping with Fe ions. For an implantation temperature of 623 K and an ion…”
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Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition by Chen, Y. N., Xu, S. J., Zheng, C. C., Ning, J. Q., Ling, F. C. C., Anwand, W., Brauer, G., Skorupa, W.

“…By implanting Zn+ ions into research-grade intentionally undoped ZnO single crystal for facilitating Zn interstitials (Zni) and O vacancies (VO) which is…”
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Suppression of tin precipitation in SiSn alloy layers by implanted carbon by Gaiduk, P. I., Lundsgaard Hansen, J., Nylandsted Larsen, A., Bregolin, F. L., Skorupa, W.

“…By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin…”
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Silicon films with gallium-rich nanoinclusions: from superconductor to insulator by Heera, V, Fiedler, J, Hübner, R, Schmidt, B, Voelskow, M, Skorupa, W, Skrotzki, R, Herrmannsdörfer, T, Wosnitza, J, Helm, M

“…Si films sputter deposited on thermally oxidized Si are enriched with Ga by ion implantation through a SiO2 capping layer. The morphology and the electrical…”
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Resistance fluctuations in insulating silicon films with superconducting nanoprecipitates – superconductor-to-metal or vortex matter phase transition? by Heera, V., Fiedler, J., Skorupa, W.

“…Silicon films with Ga-rich nanoprecipitates are superconductors or insulators in dependence on their normal state resistance. Even in the insulating state of…”
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Band-gap narrowing in Mn-doped GaAs probed by room-temperature photoluminescence by Prucnal, S., Gao, K., Skorupa, I., Rebohle, L., Vines, L., Schmidt, H., Khalid, M., Wang, Y., Weschke, E., Skorupa, W., Grenzer, J., Hübner, R., Helm, M., Zhou, S.

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Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing by Prucnal, S, Gao Kun, Zhou, Shengqiang, Wu Jiada, Cai Hua, Gordan, Ovidiu D, Zahn Dietrich R T, Larkin, G, Helm, M, Skorupa, W

“…Zinc oxide thin film is one of the most promising candidates for the transparent conductive layer in microelectronic and photovoltaic applications, due to its…”
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Millisecond flash lamp annealing of shallow implanted layers in Ge by Wündisch, C., Posselt, M., Schmidt, B., Heera, V., Schumann, T., Mücklich, A., Grötzschel, R., Skorupa, W., Clarysse, T., Simoen, E., Hortenbach, H.

“…Shallow n + layers in Ge are formed by phosphorus implantation and subsequent millisecond flash lamp annealing. Present investigations are focused on the…”
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Correlation between the microstructure and electroluminescence properties of Er-doped metal-oxide semiconductor structures by Kanjilal, A., Rebohle, L., Skorupa, W., Helm, M.

“…Optical response of a rare earth (RE)-doped SiO 2 layer is known to deteriorate markedly at room temperature due to RE clustering. The key challenge is…”
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Crystallization of amorphous-Si films by flash lamp annealing by Pécz, B., Dobos, L., Panknin, D., Skorupa, W., Lioutas, C., Vouroutzis, N.

“…The crystallization of amorphous silicon films deposited on glass, using the flash lamp annealing process was realized and studied. The duration of the flash…”
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p-Type doping of SiC by high dose Al implantation—problems and progress by Heera, V., Panknin, D., Skorupa, W.

“…The development of optimized processes for p-type doping of SiC by ion implantation and subsequent annealing is a remaining challenge to SiC-device technology…”
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