Search Results - "Skorobogatov, P.K"

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  1. 1

    Influence of temperature on dose rate laser simulation adequacy by Skorobogatov, P.K., Nikiforov, A.Y., Demidov, A.A., Levin, V.V.

    Published in IEEE transactions on nuclear science (01-12-2000)
    “…Temperature dependence of the equivalent dose rate in silicon integrated circuits (IC's) under 1.06 /spl mu/m laser irradiation is investigated. 2D-numerical…”
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    Journal Article
  2. 2

    A way to improve dose rate laser simulation adequacy [Si ICs] by Skorobogatov, P.K., Nikiforov, A.Y., Demidov, A.A.

    Published in IEEE transactions on nuclear science (01-12-1998)
    “…A method for improving laser simulation of dose rate radiation in silicon ICs is analyzed based on the application of noncoherent laser radiation. Experimental…”
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    Journal Article
  3. 3

    Dose rate laser simulation tests adequacy: shadowing and high intensity effects analysis by Nikiforov, A.Y., Skorobogatov, P.K.

    Published in IEEE transactions on nuclear science (01-12-1996)
    “…The adequacy of laser based simulation of the flash X-ray effects in microcircuits may be corrupted mainly due to laser radiation shadowing by the…”
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    Journal Article
  4. 4

    IC’s radiation effects modeling and estimation by Belyakov, V.V, Chumakov, A.I, Nikiforov, A.Y, Pershenkov, V.S, Skorobogatov, P.K, Sogoyan, A.V

    Published in Microelectronics and reliability (01-12-2000)
    “…The approach for IC's radiation hardness estimation and fault prediction is presented in this paper. It is based on the implementation of low-energy laboratory…”
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    Journal Article
  5. 5

    Radiation effects in piezoelectric sensor by Boychenko, D.V., Nikiforov, A.Y., Skorobogatov, P.K., Sogoyan, A.V.

    “…These Total dose effects in piezoelectric sensor PKGS-90LC-R are investigated. Experimental results comply with the supposition about accumulation of…”
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    Conference Proceeding
  6. 6

    Test method for IC electrical overstress hardness estimation by Skorobogatov, P.K.

    “…A test method to estimate the electrical overstress (EOS) hardness of ICs is presented. It is based on unification of test conditions. The advantage of the…”
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    Conference Proceeding
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  9. 9

    Laser simulation adequacy of dose rate latch-up by Skorobogatov, P.K., Nikiforov, A.Y., Ahabaev, B.A.

    “…2D-numerical joint solution of the optical equations and fundamental system of equations was performed to check the adequacy of laser simulation in application…”
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    Conference Proceeding
  10. 10

    Latch-up windows tests in high temperature range by Nikiforov, A.Y., Bykov, V.V., Figurov, V.S., Chumakov, A.I., Skorobogatov, P.K., Telets, V.A.

    “…CMOS IC dose rate latch-up was investigated within 10 to 100/spl deg/C temperature range with pulsed laser simulator and flash X-ray machine. Devices were…”
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    Conference Proceeding
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