Search Results - "Skogman, R."
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Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
Published in Applied physics letters (16-03-1992)“…In this letter we report the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates. A low pressure metalorganic…”
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Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates
Published in Applied physics letters (23-11-1992)“…In this letter we report the deposition of high quality single-crystal films of AIN over basal plane sapphire substrates. A conventional low pressure…”
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Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
Published in Applied physics letters (01-08-1994)“…We report the observation of room temperature violet (415 nm) stimulated emission in the vertical cavity mode from photopumped GaN/In0.25Ga0.75N…”
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Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells
Published in Applied physics letters (26-03-1990)“…AlxGa1−xN-GaN quantum wells were grown on basal plane sapphire by low-pressure metalorganic vapor deposition. The photoluminescence spectra of samples of…”
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Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p -type layers
Published in Applied physics letters (17-04-1995)“…In this letter we report the fabrication and optical-electrical characterization of violet-blue GaN homojunction light emitting diodes. Rapid thermal annealing…”
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Low pressure metalorganic chemical vapor deposition of AlN over sapphire substrates
Published in Applied physics letters (23-11-1992)“…In this letter we report the deposition of high quality single-crystal films of AlN over basal plane sapphire substrates. A conventional low pressure…”
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Properties and ion implantation of AlxGa1-xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
Published in Applied physics letters (01-01-1983)Get full text
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Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition
Published in Applied physics letters (01-03-1983)“…High quality single crystal GaN films with extremely uniform thicknesses have been grown in low pressure metalorganic chemical vapor deposition system using…”
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Infrared transmitting fibers of polycrystalline silver halides
Published in IEEE journal of quantum electronics (01-09-1979)Get full text
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Packaging of VCSEL arrays for cost-effective interconnects at <10 meters
Published in 1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299) (1999)“…Packaging techniques for optically connecting cabinet to cabinet, board to board within a chassis, or chip to chip within an MCM are described. An integrated…”
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Conference Proceeding
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efficiency of a biological activated sludge effluent treatment plant with extended aeration
Published in Water science and technology (1988)“…The requirements imposed on the Finnish forest products industry by the water authorities have focused on the reduction of BOD and suspended solids in the…”
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Journal Article -
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Properties and Ion Implantation of Al sub x Ga sub 1x N Epitaxial Single-Crystal Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition
Published in Applied physics letters (01-09-1983)“…High-quality single-crystal films of Al sub x Ga sub 1x N have been grown on sapphire substrates using low-pressure metalorganic chemical vapor deposition at…”
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Properties and ion implantation of Al x Ga1− x N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
Published in Applied physics letters (01-09-1983)“…High quality single crystal films of AlxGa1−xN have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 °C over…”
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Properties and ion implantation of Al(x)Ga(1-x)N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
Published in Applied physics letters (01-09-1983)“…High quality single crystal films of Al(x)Ga(1-x)N have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 C…”
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Advanced optoelectronic technology for smart pixels
Published in Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting (1997)“…Recent breakthroughs in optoelectronics technology have increased the feasibility of smart-pixel based processing modules. Most notable are developments in…”
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Conference Proceeding Journal Article -
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Bottoms up
Published in Skipping stones (01-03-2013)“…"Wife Carrying Race" is a very unusual yet a common sports event. It started in the country of Finland but competitions are now held in the US, Canada, Japan,…”
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Magazine Article -
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Is it Easter, or Halloween?
Published in Skipping stones (01-03-2010)“…Skogman talks about how children perceived the Easter and Halloween celebration. Here, she shares the various superstitions practiced by people during these…”
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Magazine Article