Search Results - "Sklyadneva, Irina Yu"

Electron-phonon coupling in topological surface states: The role of polar optical modes by Heid, Rolf, Sklyadneva, Irina Yu, Chulkov, Evgueni V.

“…The use of topological edge states for spintronic applications could be severely hampered by limited lifetimes due to intrinsic many-body interactions, in…”
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Raman Spectroscopy of Lattice-Matched Graphene on Strongly Interacting Metal Surfaces by Usachov, Dmitry Yu, Davydov, Valery Yu, Levitskii, Vladimir S, Shevelev, Viktor O, Marchenko, Dmitry, Senkovskiy, Boris V, Vilkov, Oleg Yu, Rybkin, Artem G, Yashina, Lada V, Chulkov, Evgueni V, Sklyadneva, Irina Yu, Heid, Rolf, Bohnen, Klaus-Peter, Laubschat, Clemens, Vyalikh, Denis V

“…Regardless of the widely accepted opinion that there is no Raman signal from single-layer graphene when it is strongly bonded to a metal surface, we present…”
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Relaxation of photoexcited hot carriers beyond multitemperature models: General theory description verified by experiments on Pb/Si(111) by Kratzer, Peter, Rettig, Laurenz, Sklyadneva, Irina Yu, Chulkov, Evgueni V., Bovensiepen, Uwe

“…The equilibration of electronic carriers in metals after excitation by an ultrashort laser pulse provides an important class of nonequilibrium phenomena in…”
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Relaxation of photo-excited hot carriers beyond multi-temperature models: General theory description verified by experiments on Pb/Si(111) by Kratzer, Peter, Rettig, Laurenz, Sklyadneva, Irina Yu, Chulkov, Evgueni V, Bovensiepen, Uwe

“…Phys. Rev. Research 4 033218 (2022) The equilibration of electronic carriers in metals after excitation by an ultra-short laser pulse provides an important…”
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Proximity Eliashberg theory of electrostatic field-effect-doping in superconducting films by Ummarino, G. A, Piatti, E, Daghero, D, Gonnelli, R. S, Sklyadneva, Irina Yu, Chulkov, E. V, Heid, R

“…Phys. Rev. B 96, 064509 (2017) We calculate the effect of a static electric field on the critical temperature of a s-wave one band superconductor in the…”
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Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures by Pielnhofer, Florian, Menshchikova, Tatiana V, Rusinov, Igor P, Zeugner, Alexander, Sklyadneva, Irina Yu, Heid, Rolf, Bohnen, Klaus-Peter, Golub, Pavlo, Baranov, Alexey I, Chulkov, Eugeni V, Pfitzner, Arno, Ruckd, Michael, Isaeva, Anna

“…State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge,…”
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