Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

Switching experiments with normally-off GaN-HFETs using a carbon-doped GaN buffer or an AlGaN buffer showed very different magnitudes of increased dynamic on-state resistance. The dynamic on-state resistance is analyzed for variations in buffer composition and set into relation to the buffer voltage...

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Bibliographic Details
Published in:	2012 24th International Symposium on Power Semiconductor Devices and ICs pp. 345 - 348
Main Authors:	Hilt, Oliver, Bahat-Treidel, Eldad, Cho, Eunjung, Singwald, Sebastian, Wurfl, Joachim
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2012
Subjects:	Aluminum gallium nitride dispersion dynamic on-state resistance Gallium nitride GaN HEMTs Logic gates MODFETs normally off Switches switching
Online Access:	Get full text
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Summary:	Switching experiments with normally-off GaN-HFETs using a carbon-doped GaN buffer or an AlGaN buffer showed very different magnitudes of increased dynamic on-state resistance. The dynamic on-state resistance is analyzed for variations in buffer composition and set into relation to the buffer voltage-blocking strength. Also, the impact of p-GaN gate normally-off and Schottky-gate normally-on device technologies on the dispersion is studied. It is concluded that a buffer with less trap sites and lower breakdown strength is more favorable for high-voltage switching than a buffer with incorporated acceptors to increase the buffer breakdown strength.
ISBN:	9781457715945 1457715945
ISSN:	1063-6854 1946-0201
DOI:	10.1109/ISPSD.2012.6229092