Search Results - "Singh, Yogesh"
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Guest Editorial Special Issue on Semiconductor Device Modeling for Circuit and System Design
Published in IEEE transactions on electron devices (01-01-2024)“…I am delighted and honored to open this IEEE Transactions on Electron Devices (TED) Special Issue on Semiconductor Device Modeling for Circuit and System…”
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Crossing the Nernst Limit (59 mV/pH) of Sensitivity Through Tunneling Transistor-Based Biosensor
Published in IEEE sensors journal (01-02-2021)“…In this work, an underlap structure of tunneling field-effect transistor (TFET) containing electrolyte/watery solution is examined to enhance the Nernst limit…”
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Effect of operating parameters and membrane characteristics on air gap membrane distillation performance for the treatment of highly saline water
Published in Journal of membrane science (15-08-2016)“…In this study, ten different commercially available PTFE, PP and PVDF membranes were tested in desalination of highly saline water by air gap membrane…”
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Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior
Published in IEEE transactions on electron devices (01-03-2019)“…In this paper, we analyze the impact of length scaling on the ON-state operation of the two classes of double-gate negative capacitance transistors:…”
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Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study
Published in Journal of physical chemistry. C (26-12-2014)“…Using density functional theory calculations, we have systematically explored the effect of surface adsorption of different atoms on the electronic properties…”
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Physics and Modeling of Multidomain FeFET With Domain Wall-Induced Negative Capacitance
Published in IEEE transactions on electron devices (01-08-2022)“…In this article, we present the dynamics and modeling of multidomains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the…”
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Static Negative Susceptibility in Ferromagnetic Material Induced by Domain Wall: Possibility to Achieve Gigantic Diamagnetism
Published in IEEE transactions on electron devices (01-06-2024)“…This article analyzes the local spatial behavior of magnetization (M) and demagnetization field (<inline-formula> <tex-math notation="LaTeX">{H}_{\text {dem}}…”
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Multidomain Interactions in Perpendicular Magnetic Tunnel Junction (p-MTJ): Enabling Multistate MRAM
Published in IEEE transactions on electron devices (01-05-2023)“…We present a comprehensive study of multidomain (MD) effects in a perpendicular magnetic tunnel junction (p-MTJ). The MD nucleation is considered in the free…”
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Impact of Domain Wall Motion on the Memory Window in a Multidomain Ferroelectric FET
Published in IEEE electron device letters (01-11-2022)“…This letter studies the impact of multi-domain dynamics on the memory window (MW) of a Ferroelectric FET (FeFET). The memory window primarily depends on the…”
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Programmable Delay Element Using Dual-Port FeFET for Post-Silicon Clock Tuning
Published in IEEE electron device letters (01-11-2023)“…The discovery of ferroelectricity in doped HfO2 has led to its widespread use in various applications, including embedded non-volatile memories and deep…”
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Dynamics and Modeling of Multidomains in Ferroelectric Tunnel Junction-Part I: Mathematical Framework
Published in IEEE transactions on electron devices (01-12-2022)“…Ferroelectric tunnel junction (FTJ) with the dead layer (DE) exhibits the multidomain texture. These multidomains in the ferroelectric (FE) cause the 2-D…”
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Dynamics and Modeling of Multidomains in Ferroelectric Tunnel Junction-Part-II: Electrostatics and Transport
Published in IEEE transactions on electron devices (01-01-2023)“…We have derived the 2-D analytical multidomain electrostatics model of the ferroelectric tunnel junction (FTJ) in part-I of this work. Here, we have used the…”
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Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation
Published in IEEE transactions on electron devices (01-12-2016)“…In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the…”
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Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure
Published in IEEE transactions on electron devices (01-03-2017)“…We present a physics-based compact model for a ferroelectric negative capacitance FET (NCFET) with a metal-ferroelectric-insulator-semiconductor (MFIS)…”
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Analysis and Modeling of Current Mismatch in Negative Capacitance Field-Effect Transistor
Published in IEEE transactions on electron devices (01-09-2022)“…In this work, we analyze the impact of random dopant fluctuations (RDFs) on the mismatch behavior of the negative capacitance field-effect transistor (NCFET)…”
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Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior
Published in IEEE transactions on electron devices (01-11-2018)“…We present a detailed TCAD analysis of the impact of length scaling and the associated short-channel effects in the subthreshold regime of the two classes of…”
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Comprehensive Variability Analysis in Dual-Port FeFET for Reliable Multi-Level-Cell Storage
Published in IEEE transactions on electron devices (01-09-2022)“…HfO 2 -based FeFET is a remarkably promising candidate among emerging memory technologies. Its manifold applications range from nonvolatile memory to…”
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Analytical Modeling of Short-Channel Effects in MFIS Negative-Capacitance FET Including Quantum Confinement Effects
Published in IEEE transactions on electron devices (01-11-2020)“…An analytical 2-D model of double-gate metal-ferroelectric-insulator-semiconductor-negative-capacitance FET (MFIS-NCFET), using Green's function approach, in…”
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Utilizing Dual-Port FeFETs for Energy-Efficient Binary Neural Network Inference Accelerators
Published in IEEE transactions on electron devices (01-07-2024)“…Neuromorphic and in-memory computing architectures using emerging nonvolatile memories (e-NVMs) have emerged as promising solutions for area- and…”
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Variability Analysis in a 3-D Multigranular Ferroelectric Capacitor
Published in IEEE transactions on electron devices (01-08-2021)“…A simulation-based study of the variability of remnant polarization <inline-formula> <tex-math notation="LaTeX">({P}_{r}) </tex-math></inline-formula> in a…”
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