Search Results - "Singh, Yogesh"

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  1. 1

    Guest Editorial Special Issue on Semiconductor Device Modeling for Circuit and System Design by Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-01-2024)
    “…I am delighted and honored to open this IEEE Transactions on Electron Devices (TED) Special Issue on Semiconductor Device Modeling for Circuit and System…”
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    Journal Article
  2. 2

    Crossing the Nernst Limit (59 mV/pH) of Sensitivity Through Tunneling Transistor-Based Biosensor by Dwivedi, Praveen, Singh, Rohit, Chauhan, Yogesh Singh

    Published in IEEE sensors journal (01-02-2021)
    “…In this work, an underlap structure of tunneling field-effect transistor (TFET) containing electrolyte/watery solution is examined to enhance the Nernst limit…”
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  3. 3

    Effect of operating parameters and membrane characteristics on air gap membrane distillation performance for the treatment of highly saline water by Xu, Jingli, Singh, Yogesh B., Amy, Gary L., Ghaffour, Noreddine

    Published in Journal of membrane science (15-08-2016)
    “…In this study, ten different commercially available PTFE, PP and PVDF membranes were tested in desalination of highly saline water by air gap membrane…”
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  4. 4

    Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior by Pahwa, Girish, Agarwal, Amit, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-03-2019)
    “…In this paper, we analyze the impact of length scaling on the ON-state operation of the two classes of double-gate negative capacitance transistors:…”
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  5. 5

    Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study by Rastogi, Priyank, Kumar, Sanjay, Bhowmick, Somnath, Agarwal, Amit, Chauhan, Yogesh Singh

    Published in Journal of physical chemistry. C (26-12-2014)
    “…Using density functional theory calculations, we have systematically explored the effect of surface adsorption of different atoms on the electronic properties…”
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  6. 6

    Physics and Modeling of Multidomain FeFET With Domain Wall-Induced Negative Capacitance by Pandey, Nilesh, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-08-2022)
    “…In this article, we present the dynamics and modeling of multidomains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the…”
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  7. 7

    Static Negative Susceptibility in Ferromagnetic Material Induced by Domain Wall: Possibility to Achieve Gigantic Diamagnetism by Pandey, Nilesh, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-06-2024)
    “…This article analyzes the local spatial behavior of magnetization (M) and demagnetization field (<inline-formula> <tex-math notation="LaTeX">{H}_{\text {dem}}…”
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  8. 8

    Multidomain Interactions in Perpendicular Magnetic Tunnel Junction (p-MTJ): Enabling Multistate MRAM by Pandey, Nilesh, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-05-2023)
    “…We present a comprehensive study of multidomain (MD) effects in a perpendicular magnetic tunnel junction (p-MTJ). The MD nucleation is considered in the free…”
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  9. 9

    Impact of Domain Wall Motion on the Memory Window in a Multidomain Ferroelectric FET by Pandey, Nilesh, Chauhan, Yogesh Singh

    Published in IEEE electron device letters (01-11-2022)
    “…This letter studies the impact of multi-domain dynamics on the memory window (MW) of a Ferroelectric FET (FeFET). The memory window primarily depends on the…”
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  10. 10

    Programmable Delay Element Using Dual-Port FeFET for Post-Silicon Clock Tuning by Chatterjee, Swetaki, Chauhan, Yogesh Singh, Amrouch, Hussam

    Published in IEEE electron device letters (01-11-2023)
    “…The discovery of ferroelectricity in doped HfO2 has led to its widespread use in various applications, including embedded non-volatile memories and deep…”
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  11. 11

    Dynamics and Modeling of Multidomains in Ferroelectric Tunnel Junction-Part I: Mathematical Framework by Pandey, Nilesh, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-12-2022)
    “…Ferroelectric tunnel junction (FTJ) with the dead layer (DE) exhibits the multidomain texture. These multidomains in the ferroelectric (FE) cause the 2-D…”
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  12. 12

    Dynamics and Modeling of Multidomains in Ferroelectric Tunnel Junction-Part-II: Electrostatics and Transport by Pandey, Nilesh, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-01-2023)
    “…We have derived the 2-D analytical multidomain electrostatics model of the ferroelectric tunnel junction (FTJ) in part-I of this work. Here, we have used the…”
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  13. 13

    Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation by Pahwa, Girish, Dutta, Tapas, Agarwal, Amit, Khandelwal, Sourabh, Salahuddin, Sayeef, Hu, Chenming, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-12-2016)
    “…In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the…”
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  14. 14

    Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure by Pahwa, Girish, Dutta, Tapas, Agarwal, Amit, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-03-2017)
    “…We present a physics-based compact model for a ferroelectric negative capacitance FET (NCFET) with a metal-ferroelectric-insulator-semiconductor (MFIS)…”
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  15. 15

    Analysis and Modeling of Current Mismatch in Negative Capacitance Field-Effect Transistor by Goel, Ravi, Sharma, Ayushi, Chahuan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-09-2022)
    “…In this work, we analyze the impact of random dopant fluctuations (RDFs) on the mismatch behavior of the negative capacitance field-effect transistor (NCFET)…”
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  16. 16

    Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior by Pahwa, Girish, Agarwal, Amit, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-11-2018)
    “…We present a detailed TCAD analysis of the impact of length scaling and the associated short-channel effects in the subthreshold regime of the two classes of…”
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  17. 17

    Comprehensive Variability Analysis in Dual-Port FeFET for Reliable Multi-Level-Cell Storage by Chatterjee, Swetaki, Thomann, Simon, Ni, Kai, Chauhan, Yogesh Singh, Amrouch, Hussam

    Published in IEEE transactions on electron devices (01-09-2022)
    “…HfO 2 -based FeFET is a remarkably promising candidate among emerging memory technologies. Its manifold applications range from nonvolatile memory to…”
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  18. 18

    Analytical Modeling of Short-Channel Effects in MFIS Negative-Capacitance FET Including Quantum Confinement Effects by Pandey, Nilesh, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-11-2020)
    “…An analytical 2-D model of double-gate metal-ferroelectric-insulator-semiconductor-negative-capacitance FET (MFIS-NCFET), using Green's function approach, in…”
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  19. 19

    Utilizing Dual-Port FeFETs for Energy-Efficient Binary Neural Network Inference Accelerators by Rafiq, Musaib, Chatterjee, Swetaki, Kumar, Shubham, Singh Chauhan, Yogesh, Sahay, Shubham

    Published in IEEE transactions on electron devices (01-07-2024)
    “…Neuromorphic and in-memory computing architectures using emerging nonvolatile memories (e-NVMs) have emerged as promising solutions for area- and…”
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  20. 20

    Variability Analysis in a 3-D Multigranular Ferroelectric Capacitor by Pandey, Nilesh, Qureshi, Karishma, Chauhan, Yogesh Singh

    Published in IEEE transactions on electron devices (01-08-2021)
    “…A simulation-based study of the variability of remnant polarization <inline-formula> <tex-math notation="LaTeX">({P}_{r}) </tex-math></inline-formula> in a…”
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