Search Results - "Singanamalla, R."

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology (\hbox) by Singanamalla, R., Yu, H.Y., Van Daele, B., Kubicek, S., De Meyer, K.

“…The impact of aluminum (Al) implantation into TiN/SiO 2 on the effective work function (EWF) of poly-Si/ TiN/SiO 2 is investigated. Al implanted at 5 keV with…”
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On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO2 and poly-Si/TiN/HfSiON gate stacks by SINGANAMALLA, R, YU, H. Y, POURTOIS, G, FERAIN, I, ANIL, K. G, KUBICEK, S, HOFFMANN, T. Y, JURCZAK, M, BIESEMANS, S, DE MEYER, K

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Effect of degas before metal gate deposition on the threshold voltage by Pétry, J., Xiong, K., Ragnarsson, L.-A., Singanamalla, R., Hooker, J.

“…The interaction between the dielectric and the metal gates is crucial for effective workfunction and V T. In this work, we investigate the effect of a degas…”
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Electrical Properties of nMOSFETs Using the NiSi:Yb FUSI Electrode by Yu, H.Y., Lauwers, A., Demeurisse, C., Richard, O., Mertens, S., Opsomer, K., Singanamalla, R., Rosseel, E., Absil, P., Biesemans, S.

“…In this letter, nMOSFETs using a NiSi:Yb fully silicide (FUSI) electrode are demonstrated for the first time. We report that the integration of NiSi:Yb FUSI…”
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Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an aluminum oxide (AlO) capping layer by Singanamalla, R., Yu, H., O’Sullivan, B.J., Petry, J., Mercha, A., Paraschiv, V., Volders, H., Kubicek, S., De Meyer, K., Biesemans, S.

“…We investigate the influence of aluminum oxide (AlO) capping on SiON on the threshold voltage and I on of Poly-Si/TiN gated pMOSFETs. The AlO capping resulted…”
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Demonstration of metal-gated low Vt n-MOSFETs using a poly -Si /TaN/Dy2O3/SiON gate stack with a scaled EOT value by YU, H. Y, SINGANAMALLA, R, YIN, K. M, SCHRAM, T, KUBICEK, S, DE GENDT, S, ABSIL, P, DE MEYER, K, BIESEMANS, S, RAGNARSSON, L.-A, CHANG, V. S, CHO, H.-J, MITSUHASHI, R, ADELMANN, C, VAN ELSHOCHT, S, LEHNEN, P, CHANG, S. Z

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Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack by Veloso, A., Yu, H.Y., Lauwers, A., Chang, S.Z., Adelmann, C., Onsia, B., Demand, M., Brus, S., Vrancken, C., Singanamalla, R., Lehnen, P., Kittl, J., Kauerauf, T., Vos, R., O′Sullivan, B.J., Van Elshocht, S., Mitsuhashi, R., Whittemore, G., Yin, K.M., Niwa, M., Hoffmann, T., Absil, P., Jurczak, M., Biesemans, S.

“…This work reports that introducing lanthanide in the gate dielectric or in the gate electrode results, in both cases, in large effective work function (eWF)…”
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Ni fully GermanoSilicide for gate electrode application in pMOSFETs with HfSiON gate dielectrics by Hong Yu Yu, Singanamalla, R., Simoen, E., Xiaoping Shi, Lauwers, A., Kittl, J.A., Van Elshocht, S., Kristin De Meyer, Absil, P., Jurczak, M., Biesemans, S.

“…A study on using a novel metal gate-the Ni fully GermanoSilicide (FUGESI)-in pMOSFETs is presented. Using HfSiON high-/spl kappa/ gate dielectrics and…”
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On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO/sub 2/ and poly-Si/TiN/HfSiON gate stacks by Singanamalla, R., Yu, H.Y., Pourtois, G., Ferain, I., Anil, K.G., Kubicek, S., Hoffmann, T.Y., Jurczak, M., Biesemans, S., De Meyer, K.

“…The impact of TiN film thickness variations on the effective work function (WF) of poly-Si/TiN/SiO/sub 2/ and poly-Si/TiN/HfSiON interfaces has been…”
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Gate electrode effects on low-frequency (1/ f) noise in p-MOSFETs with high-κ dielectrics by Srinivasan, P., Simoen, E., Singanamalla, R., Yu, H.Y., Claeys, C., Misra, D.

“…The defects related to the gate–dielectric in high-κ-MOSFETs are studied using the 1/ f noise technique. Three different types of gate electrodes were used for…”
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Multi-VT engineering in highly scaled CMOS bulk and FinFET devices through Ion Implantation into the metal gate stack featuring a 1.0nm EOT high-K oxide by Singanamalla, R, Boccardi, G, Tseng, J, Petry, J, Vellianitis, G, van Dal, M J H, Duriez, B, Vecchio, G, Bulle-Lieuwma, C W T, Berkum, J V, Lander, R, Müller, M

“…We demonstrate multi-V T engineering on both CMOS bulk and FinFET devices through As implantation into a 1.0nm EOT TiN/high-K gate stack within a single metal…”
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A Low-Power Multi-Gate FET CMOS Technology with 13.9ps Inverter Delay, Large-Scale Integrated High Performance Digital Circuits and SRAM by von Arnim, K., Augendre, E., Pacha, A.C., Schulz, T., San, K.T., Bauer, F., Nackaerts, A., Rooyackers, R., Vandeweyer, T., Degroote, B., Collaert, N., Dixit, A., Singanamalla, R., Xiong, W., Marshall, A., Cleavelin, C.R., Schrufer, K., Jurczak, M.

“…This paper presents an in-depth analysis of digital performance of a Multi-Gate FET technology. Ring oscillators with metal gates and undopedfins show an…”
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Methodology for Flatband Voltage Measurement in Fully Depleted Floating-Body FinFETs by Ferain, Isabelle, Pantisano, Luigi, O'Sullivan, Barry J., Singanamalla, Raghunath, Collaert, Nadine, Jurczak, Malgorzata, De Meyer, Kristin

“…Among the novel methods for flatband voltage (V fb ) measurement, we demonstrate that a gate-leakage-based technique is the most suitable for measuring V fb in…”
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On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO(2) and poly-Si/TiN/HfSiON gate stacks by Singanamalla, R, Yu, H Y, Pourtois, G, Ferain, I, Anil, K G, Kubicek, S, Hoffmann, T Y, Jurczak, M, Biesemans, S, De Meyer, K

“…The impact of TiN film thickness variations on the effective work function (WF) of poly-Si/TiN/SiO(2) and poly-Si/TiN/HfSiON interfaces has been investigated…”
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On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO sub(2) and poly-Si/TiN/HfSiON gate stacks by Singanamalla, R, Yu, HY, Pourtois, G, Ferain, I, Anil, K G, Kubicek, S, Hoffmann, TY, Jurczak, M, Biesemans, S, De Meyer, K

“…The impact of TiN film thickness variations on the effective work function (WF) of poly-Si/TiN/SiO sub(2) and poly-Si/TiN/HfSiON interfaces has been…”
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Achieving Low- V Ni-FUSI CMOS by Ultra-Thin \hbox\hbox Capping of Hafnium Silicate Dielectrics by Veloso, A., Yu, H.Y., Chang, S.Z., Adelmann, C., Onsia, B., Brus, S., Demand, M., Lauwers, A., O'Sullivan, B.J., Singanamalla, R., Pourtois, G., Lehnen, P., Van Elshocht, S., De Meyer, K., Jurczak, M., Absil, P.P., Biesemans, S.

“…This letter reports that the effective work function (eWF) of Ni-Fully Silicided (Ni-FUSI) devices with HfSiON gate dielectrics can be modulated toward the…”
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Achieving Low-[Formula Omitted] Ni-FUSI CMOS by Ultra-Thin [Formula Omitted] Capping of Hafnium Silicate Dielectrics by Veloso, A, Yu, H.Y, Chang, S.Z, Adelmann, C, Onsia, B, Brus, S, Demand, M, Lauwers, A, O'Sullivan, B.J, Singanamalla, R, Pourtois, G, Lehnen, P, Van Elshocht, S, De Meyer, K, Jurczak, M, Absil, P.P, Biesemans, S

“…This letter reports that the effective work function (eWF) of Ni-Fully Silicided (Ni-FUSI) devices with HfSiON gate dielectrics can be modulated toward the…”
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Demonstration of Metal-Gated Low V@@dt@ n-MOSFETs Using a Poly-Si/TaN/Dy@@d2@O@@d3@/SiON Gate Stack With a Scaled EOT Value by Yu, H Y, Singanamalla, R, Ragnarsson, L.-A., Chang, V S, Cho, H.-J., Mitsuhashi, R, Adelmann, C, van Elshocht, S., Lehnen, P, Chang, S Z, Yin, K M, Schram, T, Kubicek, S, de Gendt, S., Absil, P, de Meyer, K, Biesemans, S

“…In this letter, we report that by using a thin dysprosium oxide (Dy@@d2@O@@d3@)cap layer (approx. 1-nm thick) on top of SiON host dielectrics, the threshold…”
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Demonstration of Metal-Gated Low V n-MOSFETs Using a Poly- \hbox\hbox/\hbox Gate Stack With a Scaled EOT Value by H.Y. Yu, Singanamalla, R., Ragnarsson, L.-A., V.S. Chang, H.-J. Cho, Mitsuhashi, R., Adelmann, C., Van Elshocht, S., Lehnen, P., S.Z. Chang, K.M. Yin, Schram, T., Kubicek, S., De Gendt, S., Absil, P., De Meyer, K., Biesemans, S.

“…In this letter, we report that by using a thin dysprosium oxide (Dy 2 O 3 )cap layer (~1-nm thick) on top of SiON host dielectrics, the threshold voltage (V t…”
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Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics by VELOSO, A, YU, H. Y, POURTOIS, G, LEHNEN, P, VAN ELSHOCHT, S, DE MEYER, K, JURCZAK, M, ABSIL, P. P, BIESEMANS, S, CHANG, S. Z, ADELMANN, C, ONSIA, B, BRUS, S, DEMAND, M, LAUWERS, A, O'SULLIVAN, B. J, SINGANAMALLA, R

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