Search Results - "Simons, D. S."

Use of quantum effects as potential qualifying metrics for “quantum grade silicon” by Ramanayaka, A. N., Tang, Ke, Hagmann, J. A., Kim, Hyun-Soo, Simons, D. S., Richter, C. A., Pomeroy, J. M.

“…Across solid state quantum information, material deficiencies limit performance through enhanced relaxation, charge defect motion, or isotopic spin noise…”
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Summary of ISO/TC 201 standard: XIII, ISO 18114:2003-surface chemical analysis-secondary ion mass spectrometry-determination of relative sensitivity factors from ion-implanted reference materials by Simons, D. S.

“…This International Standard specifies a method of determining relative sensitivity factors (RSFs) for secondary ion mass spectrometry (SIMS) from ion‐implanted…”
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Epitaxial Si-based tunnel diodes by Thompson, P.E, Hobart, K.D, Twigg, M.E, Rommel, S.L, Jin, N, Berger, P.R, Lake, R, Seabaugh, A.C, Chi, P.H, Simons, D.S

“…Tunneling devices in combination with transistors offer a way to extend the performance of existing technologies by increasing circuit speed and decreasing…”
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Secondary ion yield changes in Si and GaAs due to topography changes during O+ 2 or Cs+ ion bombardment by Stevie, F. A., Kahora, P. M., Simons, D. S., Chi, P.

“…Changes in secondary ion yields of matrix and dopant species have been correlated with changes in surface topography during O+ 2 bombardment of Si and GaAs. In…”
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Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si by Thompson, P.E, Silvestre, C, Twigg, M, Jernigan, G, Simons, D.S

“…Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Ge on Si(100) during solid source molecular beam epitaxy growth. In…”
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High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry by Chi, P. H., Simons, D. S., McKinley, J. M., Stevie, F. A., Granger, C. N.

“…The metrology section of the 1999 International Technology Roadmap for Semiconductors specifies in-line dopant profile concentration precision requirements…”
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Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy by HOBART, K. D, GODBEY, D. J, THOMPSON, P. E, SIMONS, D. S

“…X-ray photoelectron spectroscopy, depth profiling with secondary ion mass spectrometry, and conductivity measurements have been performed on Sb-doped Si(100)…”
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Molecular ion imaging and dynamic secondary-ion mass spectrometry of organic compounds by Gillen, Greg, Simons, David S, Williams, Peter

“…An ion microscope equipped with a resistive anode encoder imaging system has been used to acquire molecular secondary ion images, with lateral resolution on…”
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A particulate isotopic standard of uranium and plutonium in an aluminosilicate matrix by Stoffel(s), J.J., Briant, J.K., Simons, D.S.

“…Mixed-actinide microstandard particles have been produced for calibration and performance testing of isotope-ratio mass spectrometers and ion and electron…”
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Enhanced Zn diffusion in GaAs pnpn structures: Growth versus annealing by Chen, C. Y., Cohen, R. M., Simons, D. S., Chi, P. H.

“…Zn diffusivity, DZn in heavily doped pnpn GaAs structures has been measured after growth and annealing. During growth at 650 °C, DZn∼10−12 cm2/s in the buried…”
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Repeatability of Si concentration measurements in Si-doped GaN films by Chi, P. H., Simons, D. S., Wickenden, A. E., Koleske, D. D.

“…In high mass resolution secondary ion mass spectrometry Cs + depth profile measurements of Si in GaN films, the secondary ion intensity ratio of 28 Si − to the…”
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Transient enhanced diffusion without {311} defects in low energy B+-implanted silicon by Zhang, L. H., Jones, K. S., Chi, P. H., Simons, D. S.

“…Low energy and low dose B+-implanted Si has been studied using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS)…”
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Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions by Niu Jin, Sung-Yong Chung, Rice, A.T., Berger, P.R., Thompson, P.E., Rivas, C., Lake, R., Sudirgo, S., Kempisty, J.J., Curanovic, B., Rommel, S.L., Hirschman, K.D., Kurinec, S.K., Chi, P.H., Simons, D.S.

“…Si/SiGe resonant interband tunnel diodes (RITDs) employing /spl delta/-doping spikes that demonstrate negative differential resistance (NDR) at room…”
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The growth and characterization of Si1-xGex multiple quantum wells on Si(110) and Si(111) by THOMPSON, P. E, KREIFELS, T. L, GREGG, M, HENGEHOLD, R. L, YEO, Y. K, SIMONS, D. S, TWIGG, M. E, FATEMI, M, HOBART, K

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Diffusion of ion implanted boron in preamorphized silicon by Jones, K. S., Zhang, L. H., Krishnamoorthy, V., Law, M., Simons, D. S., Chi, P., Rubin, L., Elliman, R. G.

“…Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry (SIMS) and transmission…”
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Diode structures from amorphous low-temperature GaAs by Kyono, C. S., Tadayon, B., Twigg, M. E., Giordana, A., Simons, D. S., Fatemi, M., Tadayon, S.

“…Effect of annealing on electrical properties of GaAs diode structure that incorporates a nominally undoped LT layer on top of conventionally grown p-type GaAs…”
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Characterization of sample heterogeneity in secondary ion mass spectrometry by the use of a sampling constant model by Michiels, Frank P. L, Adams, Freddy C. V, Bright, David S, Simons, David S

“…An in-depth study was undertaken to evaluate the applicability of the sampling constant concept for the characterization of heterogeneity of elemental…”
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99.996 % 12C films isotopically enriched and deposited in situ by Dwyer, K. J., Pomeroy, J. M., Simons, D. S.

“…Ionizing natural abundance carbon dioxide gas, we extract and mass select the ions, depositing thin films isotopically enriched to 99.9961(4) % 12C as measured…”
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Unintentional indium incorporation in GaAs grown by molecular beam epitaxy by MYERS, D. R, DAWSON, L. R, KLEM, J. F, BRENNAN, T. M, HAMMONS, B. E, SIMONS, D. S, COMAS, J, PELLEGRINO, J

“…We have quantified unintentional indium incorporation in GaAs grown by molecular beam epitaxy in a variety of commercial systems. We find that the…”
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Doping of gallium nitride using disilane by WICKENDEN, A. E, ROWLAND, L. B, DOVERSPIKE, K, GASKILL, D. K, FREITAS, J. A, SIMONS, D. S, CHI, P. H

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