Search Results - "Simon, Daniel K."

On the Control of the Fixed Charge Densities in Al2O3‑Based Silicon Surface Passivation Schemes by Simon, Daniel K, Jordan, Paul M, Mikolajick, Thomas, Dirnstorfer, Ingo

“…A controlled field-effect passivation by a well-defined density of fixed charges is crucial for modern solar cell surface passivation schemes. Al2O3 nanolayers…”
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Effects of buoyancy and thermal radiation on MHD flow over a stretching porous sheet using homotopy analysis method by Daniel, Yahaya Shagaiya, Daniel, Simon K.

“…This paper investigates the theoretical influence of buoyancy and thermal radiation on MHD flow over a stretching porous sheet. The model which constituted…”
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Symmetrical Al2O3-based passivation layers for p- and n-type silicon by Simon, Daniel K., Jordan, Paul M., Dirnstorfer, Ingo, Benner, Frank, Richter, Claudia, Mikolajick, Thomas

“…Al2O3 nanolayers, as currently used in the solar industry, provide excellent passivation over the entire injection level range for p-type Si. A high…”
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On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films by Tsigkourakos, Menelaos, Hantschel, Thomas, Simon, Daniel K., Nuytten, Thomas, Verhulst, Anne S., Douhard, Bastien, Vandervorst, Wilfried

“…In many electroanalytical and bio-electrochemical applications conductive diamond films act as contact layers. These films are grown starting from a Si-surface…”
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BiasMDP: Carrier lifetime characterization technique with applied bias voltage by Jordan, Paul M., Simon, Daniel K., Mikolajick, Thomas, Dirnstorfer, Ingo

“…A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage…”
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Low-thermal budget flash light annealing for Al2O3 surface passivation by Simon, Daniel K., Henke, Thomas, Jordan, Paul M., Fengler, Franz P. G., Mikolajick, Thomas, Bartha, Johann W., Dirnstorfer, Ingo

“…This value is achieved due to a very low interface trap density of below 1010 eV–1 cm–2 and a fixed charge density of (2–3) × 1012 cm–2. In contrast, plasma…”
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On the Control of the Fixed Charge Densities in Al 2 O 3 -Based Silicon Surface Passivation Schemes by Simon, Daniel K., Jordan, Paul M., Mikolajick, Thomas, Dirnstorfer, Ingo

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ALD Al2O3 based nanolaminates for solar cell applications by Simon, Daniel K., Jordan, Paul M., Knaut, Martin, Chohan, Talha, Mikolajick, Thomas, Dirnstorfer, Ingo

“…Al 2 O 3 based nanolaminates provide new functionalities for silicon surface passivation layers in future high-efficient cell concepts. This work presents two…”
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Symmetrical Al sub(2)O sub(3)-based passivation layers for p- and n-type silicon by Simon, Daniel K, Jordan, Paul M, Dirnstorfer, Ingo, Benner, Frank, Richter, Claudia, Mikolajick, Thomas

“…The Al[sub 2]O[sub 3] nanolayers, as currently used in the solar industry, provide excellent passivation over the entire injection level range for p-type Si. A…”
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Al2O3-TiO2 Nanolaminates for Conductive Silicon Surface Passivation by Dirnstorfer, Ingo, Chohan, Talha, Jordan, Paul M., Knaut, Martin, Simon, Daniel K., Bartha, Johann W., Mikolajick, Thomas

“…Al 2 O 3 -TiO 2 nanolaminates are very attractive candidates for future conductive passivation layers because they are purely based on dielectric materials,…”
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Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering by Simon, Daniel K., Tröger, David, Schenk, Tony, Dirnstorfer, Ingo, Fengler, Franz P. G., Jordan, Paul M., Krause, Andreas, Mikolajick, Thomas

“…Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO)…”
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Low-thermal budget flash light annealing for Al sub(2)O sub(3) surface passivation by Simon, Daniel K, Henke, Thomas, Jordan, Paul M, Fengler, Franz PG, Mikolajick, Thomas, Bartha, Johann W, Dirnstorfer, Ingo

“…This value is achieved due to a very low interface trap density of below 10 super(10) eV super(-1) cm super(-2) and a fixed charge density of (2-3) 10…”
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Low‐thermal budget flash light annealing for Al 2 O 3 surface passivation by Simon, Daniel K., Henke, Thomas, Jordan, Paul M., Fengler, Franz P. G., Mikolajick, Thomas, Bartha, Johann W., Dirnstorfer, Ingo

“…This value is achieved due to a very low interface trap density of below 10 10 eV –1 cm –2 and a fixed charge density of (2–3) × 10 12 cm –2 . In contrast,…”
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Al 2 O 3 -TiO 2 Nanolaminates for Conductive Silicon Surface Passivation by Dirnstorfer, Ingo, Chohan, Talha, Jordan, Paul M., Knaut, Martin, Simon, Daniel K., Bartha, Johann W., Mikolajick, Thomas

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Al sub(2)O sub(3)-TiO sub(2) Nanolaminates for Conductive Silicon Surface Passivation by Dirnstorfer, Ingo, Chohan, Talha, Jordan, Paul M, Knaut, Martin, Simon, Daniel K, Bartha, Johann W, Mikolajick, Thomas

“…Al sub(2)O sub(3)-TiO sub(2) nanolaminates are very attractive candidates for future conductive passivation layers because they are purely based on dielectric…”
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