Investigation of amorphous V/sub 2/O/sub 5/-P/sub 2/O/sub 5/ with different metallic contacts

Amorphous semiconductors applied in switching and memory techniques are, generally, chalcogenous glasses. Their main disadvantage consisted of a relatively low current density. Due to this fact, research has moved on to an amorphous substance, V/sub 2/O/sub 5/-P/sub 2/O/sub 5/, with a low CuO dopant...

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Bibliographic Details
Published in:	24th International Spring Seminar on Electronics Technology. Concurrent Engineering in Electronic Packaging. ISSE 2001. Conference Proceedings (Cat. No.01EX492) pp. 121 - 124
Main Authors:	Saly, V., Miklos, P., Simockova, J.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 2001
Subjects:	Amorphous materials Amorphous semiconductors Current density Dielectric materials Dielectric measurements Electric variables measurement Glass Impedance measurement Inorganic materials Semiconductor materials
Online Access:	Get full text
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Summary:	Amorphous semiconductors applied in switching and memory techniques are, generally, chalcogenous glasses. Their main disadvantage consisted of a relatively low current density. Due to this fact, research has moved on to an amorphous substance, V/sub 2/O/sub 5/-P/sub 2/O/sub 5/, with a low CuO dopant content (0.5 to 2.0%) that exhibited higher current density. The metal contact material plays an important role when semiconductive or dielectric measurements were prepared from a blend composed of 70 and 30 mole % of V/sub 2/O/sub 5/ and P/sub 2/O/sub 5/, respectively. CuO was added as a doping admixture to these fundamental constituents. The complex impedance was used to present the measured results and characterise the electrical properties of the measured metal-V/sub 2/O/sub 5/-P/sub 2/O/sub 5/-metal structure.
ISBN:	0780371119 9780780371118
DOI:	10.1109/ISSE.2001.931027