Search Results - "Simingalam, Sina"

Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy by Simingalam, Sina, VanMil, Brenda L., Chen, Yuanping, DeCuir, Eric A., Meissner, Greg P., Wijewarnasuriya, Priyalal, Dhar, Nibir K., Rao, Mulpuri V.

“…•Short-wavelength infrared HgCdTe devices grown on CdTe/Si substrates have been demonstrated.•Data suggests diffusion current dominates near zero bias for…”
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Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si by Simingalam, Sina, Pattison, James, Chen, Yuanping, Wijewarnasuriya, Priyalal, Rao, Mulpuri V.

“…Mercury cadmium telluride (MCT) epilayers have been grown on CdTe/Si using molecular beam epitaxy and 8- μ m-deep mesa structures formed using plasma etching…”
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Low Temperature, Rapid Thermal Cycle Annealing of HgCdTe Grown on CdTe/Si by Simingalam, Sina, Brill, Gregory, Wijewarnasuriya, Priyalal, Rao, Mulpuri V.

“…The HgCdTe(MCT) grown on CdTe/Si substrate has a high dislocation density due to lattice mismatch. Thermal cycle annealing (TCA) is effective in reducing the…”
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Annealing And Device Characterization Of Hgcdte Grown On Cdte/Si Substrates by Simingalam, Sina

“…Infrared sensors have long been utilized for personal, commercial, and government applications. Mercury cadmium telluride (MCT) is the highest quality material…”
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MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate by Chen, Yuanping, Simingalam, Sina, Brill, Gregory, Wijewarnasuriya, Priyalal, Dhar, Nibir, Kim, Jae Jin, Smith, David J.

“…Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for…”
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Annealing And Device Characterization Of Hgcdte Grown On Cdte/Si Substrates by Simingalam, Sina

“…Infrared sensors have long been utilized for personal, commercial, and government applications. Mercury cadmium telluride (MCT) is the highest quality material…”
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Thermal cycle annealing and its application to arsenic-ion implanted HgCdTe by Simingalam, Sina, Wijewarnasuriya, Priyalal, Rao, Mulpuri V.

“…Arsenic ion-implantation is a standard device processing step to create selective area p+-HgCdTe (MCT) regions in planar devices. One of the issues associated…”
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