Search Results - "Simakov, V.A"

Effect of current localization on the output optical power in high-power laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures by Gavrina, Polina S., Podoskin, Aleksandr A., Shushkanov, Ilya V., Soboleva, Olga S., Miroshnikov, Igor V., Slipchenko, Sergey O., Pikhtin, Nikita A., Bagaev, T.A., Ladugin, M.A., Marmalyuk, A.A., Simakov, V.A.

“…The operation of a semiconductor laser-thyristor based on AlGaAs/GaAs/InGaAs heterostructures with a p-GaAs base thickness of 4.4\ \mu \mathrm{m} was under…”
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Hybrid and integrated high-power pulse laser-thyristors by Zhelnin, A.I., Bagaev, T.A., Gultikov, N.V., Ladugin, M.A., Marmalyuk, A.A., Kurnyavko, Yu.Y., Krichevskii, V.V., Morozyuk, A.A., Konyaev, Y.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.

“…High-power hybrid semiconductor lasers - thyristors (λ = 900 - 920 nm) consisting of thyristor crystals soldered in series with an integrated semiconductor…”
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Visualization and study of the switching processes dynamics in electrically bistable AlGaAs/GaAs/InGaAs thin-base laser-thyristors by Podoskin, A.A., Golovin, V.S., Gavrina, P.S., Romanovicn, D.N., Soboleva, O.S., Slipchenko, S.O., Lunev, A.Yu, Mikhailov, V.Yu, Pikhtin, N.A., Bagaev, T.A., Ladugin, M.A., Marmalyuk, A.A., Simakov, V.A.

“…The results of turn-on process inhomogeneities visualization in AlGaAs/GaAs/InGaAs thin-base laser-thyristor are presented. Based on the data obtained, the…”
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X-ray spectral determination of gold in geological samples after its concentration by low-temperature fire assay by Simakov, V. A., Isaev, V. E.

“…The technology of gold extraction to lead from its mixture with the sample powder during lowtemperature alkaline fusion is developed. The optimal ratios of…”
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Analysis of Niobium–Rare-Earth Ores by Inductively Coupled Plasma Mass Spectrometry by Karandashev, V. K., Zybinsky, A. M., Kolotov, V. P., Kordyukov, S. V., Simakov, V. A., Orlova, T. V.

“…To determine the composition of niobium–rare-earth ores by atomic emission spectrometry and inductively coupled plasma mass spectrometry, two procedures are…”
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High-power pulse-emitting lasers in the 1.5-1.6 µm spectral region by Gorlachuk, P.V, Ryaboshtan, Yu.L, Marmalyuk, A.A, Kurnosov, V.D, Kurnosov, K.V, Zhuravleva, O.V, Romantsevich, V.I, Chernov, R.V, Ivanov, A.V, Simakov, V.A

“…The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions…”
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On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range by Slipchenko, S. O., Podoskin, A. A., Vasil’eva, V. V., Pikhtin, N. A., Rozhkov, A. V., Gorbatyuk, A. V., Zolotarev, V. V., Veselov, D. A., Jabotinskii, A. V., Petukhov, A. A., Tarasov, I. S., Bagaev, T. A., Zverkov, M. V., Konyaev, V. P., Kurniavko, Y. V., Ladugin, M. A., Lobintsov, A. V., Marmalyuk, A. A., Padalitsa, A. A., Simakov, V. A.

“…A high power laser-thyristor structure providing low current-related and optical losses is developed. The possibility of controlling the lasing turn-on delay…”
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Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser by Marmalyuk, A. A., Padalitsa, A. A., Ladugin, M. A., Gorlachuk, P. V., Yarotskaya, I. V., Andreev, A. Yu, Bagaev, T. A., Lobintsov, A. V., Kurnyavko, Yu. V., Sapozhnikov, S. M., Danilov, A. I., Telegin, K. Yu, Simakov, V. A., Zasavitskii, I. I., Zarubin, S. S.

“…Short-period GaAs/AlGaAs superlattices, an active region, and a quantum cascade laser heterostructure have been grown by metalorganic vapor phase epitaxy, and…”
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Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission by Konyaev, V. P., Marmalyuk, A. A., Ladugin, M. A., Bagaev, T. A., Zverkov, M. V., Krichevsky, V. V., Padalitsa, A. A., Sapozhnikov, S. M., Simakov, V. A.

“…The results of studying single laser diodes and arrays in the spectral range of 900–1060 nm, fabricated based on InGaAs/AlGaAs epitaxially integrated…”
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Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures by Marmalyuk, A. A., Andreev, A. Yu, Konyaev, V. P., Ladugin, M. A., Lebedeva, E. I., Meshkov, A. S., Morozyuk, A. N., Sapozhnikov, S. M., Danilov, A. I., Simakov, V. A., Telegin, K. Yu, Yarotskaya, I. V.

“…AlGaAs/GaAs laser heterostructures with various active-region geometries, namely, with broadened asymmetric and narrow symmetric waveguides, and with various…”
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A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD by Vinokurov, D. A., Konyaev, V. P., Ladugin, M. A., Lyutetskiy, A. V., Marmalyuk, A. A., Padalitsa, A. A., Petrunov, A. N., Pikhtin, N. A., Simakov, V. A., Slipchenko, S. O., Sukharev, A. V., Fetisova, N. V., Shamakhov, V. V., Tarasov, I. S.

“…Design parameters of epitaxially stacked tunnel-junction asymmetric separate-confinement laser heterostructures are chosen. Technological modes for fabrication…”
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Laser diodes with several emitting regions (λ = 800–1100 nm) on the basis of epitaxially integrated heterostructures by Marmalyuk, A. A., Davydova, E. I., Zverkov, M. V., Konyaev, V. P., Krichevsky, V. V., Ladugin, M. A., Lebedeva, E. I., Petrov, S. V., Sapozhnikov, S. M., Simakov, V. A., Uspenskiy, M. B., Yarotskaya, I. V., Pikhtin, N. A., Tarasov, I. S.

“…The results of a series of studies concerned with formation of epitaxially integrated InGaAs/AlGaAs and AlGaAs/AlGaAs heterostructures with several emitting…”
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High-power Semiconductor 1.3-1.6\ \mu \mathrm Laterally-Coupled Distributed Bragg Reflector Laser by Bagaeva, O.O., Danilov, A.I., Ivanov, A.V., Kurnosov, V.D., Kurnosov, K.V., Chernov, R.V., Shishkov, V.V., Kurnyavko, Y.V., Ladugin, M.A., Marmalyuk, A.A., Romantsevich, V.I., Ryaboshtan, Y.L., Svetogorov, V.N., Simakov, V.A

“…The output characteristics of 1.3-1.6\ \mu \mathrm{m} high-power single-frequency DFB-lasers with a laterally coupled Bragg diffraction grating were…”
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