Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allo...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Vol. 10; no. 7; p. 1315
Main Authors: Grossi, Davide F, Koelling, Sebastian, Yunin, Pavel A, Koenraad, Paul M, Klimko, Grigory V, Sorokin, Sergey V, Drozdov, Mikhail N, Ivanov, Sergey V, Toropov, Alexey A, Silov, Andrei Y
Format: Journal Article
Language:English
Published: Switzerland MDPI AG 04-07-2020
MDPI
Subjects:
Defects
diffusion
diluted magnetic semiconductors
dopants
Growth conditions
Impurities
Magnetic semiconductors
Mass spectroscopy
Mn impurities
Optical properties
segregation
Selenium
Semiconductors
Zinc
ZnSe/GaAs interface
dopants
Mn impurities
diluted magnetic semiconductors
diffusion
segregation
ZnSe/GaAs interface
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Summary:The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.
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ISSN:2079-4991
2079-4991
DOI:10.3390/nano10071315