Search Results - "Siegwart, H"

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by El Kazzi, M., Czornomaz, L., Rossel, C., Gerl, C., Caimi, D., Siegwart, H., Fompeyrine, J., Marchiori, C.

“…Metal-oxide-semiconductor (MOS) capacitors were fabricated by depositing composite 2 nm HfO2/1 nm Al2O3/1 nm a-Si gate stacks on p-In0.53Ga0.47As/InP (001)…”
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Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins by Nolting, F, Scholl, A, Stöhr, J, Seo, J. W, Fompeyrine, J, Siegwart, H, Locquet, J.-P, Anders, S, Lüning, J, Fullerton, E. E, Toney, M. F, Scheinfein, M. R, Padmore, H. A

“…The arrangement of spins at interfaces in a layered magnetic material often has an important effect on the properties of the material. One example of this is…”
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Towards large size substrates for III-V co-integration made by direct wafer bonding on Si by Daix, N., Uccelli, E., Czornomaz, L., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Shiu, K.-T., Cheng, C.-W., Krishnan, M., Lofaro, M., Kobayashi, M., Sadana, D., Fompeyrine, J.

“…We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V…”
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CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs by Czornomaz, L., El Kazzi, M., Hopstaken, M., Caimi, D., Mächler, P., Rossel, C., Bjoerk, M., Marchiori, C., Siegwart, H., Fompeyrine, J.

“…► S/D access regions for self-aligned implant-free InGaAs MOSFETs are investigated. ► A combination of in situ dopped raised InGaAs S/D with Nickel–InGaAs…”
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Observation of Antiferromagnetic Domains in Epitaxial Thin Films by Scholl, A., Stöhr, J., Lüning, J., Seo, J. W., Fompeyrine, J., Siegwart, H., J.-P. Locquet, Nolting, F., Anders, S., Fullerton, E. E., Scheinfein, M. R., Padmore, H. A.

“…Antiferromagnetic domains in an epitaxial thin film, LaFeO3on SrTiO3(100), were observed using a high-spatial-resolution photoelectron emission microscope with…”
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SrHfO3 as gate dielectric for future CMOS technology by ROSSEL, C, SOUSA, M, GERMANN, R, TAPPONNIER, A, BABICH, K, MARCHIORI, C, FOMPEYRINE, J, WEBB, D, CAIMI, D, MEREU, B, ISPAS, A, LOCQUET, J. P, SIEGWART, H

“…Thin epitaxial films of the high-kappa perovskite SrHfO3 were grown by molecular beam epitaxy on Si(100) and investigated by ellipsometry and X-ray…”
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An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch by Djara, V., Deshpande, V., Uccelli, E., Daix, N., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Shiu, K.-T, Weng, C.-W, Krishnan, M., Lofaro, M., Steiner, R., Sadana, D., Lubyshev, D., Liu, A., Czornomaz, L., Fompeyrine, J.

“…We report on the first demonstration of ultra-thin body (50 nm), low defectivity 200 mm InGaAs-on-insulator (-OI) fabricated by direct wafer bonding technique…”
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Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si by Seo, J. W., Fompeyrine, J., Guiller, A., Norga, G., Marchiori, C., Siegwart, H., Locquet, J.-P.

“…We have studied the growth of epitaxial La2Zr2O7 thin films on (111) Si. Although the interface structure can be strongly affected by the Si oxidation during…”
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Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars by Richter, M., Uccelli, E., Taboada, A.G., Caimi, D., Daix, N., Sousa, M., Marchiori, C., Siegwart, H., Falub, C.V., von Känel, H., Isa, F., Isella, G., Pezous, A., Dommann, A., Niedermann, P., Fompeyrine, J.

“…(In,Ga)As/GaAs quantum wells were heterogeneously integrated on planar and patterned Ge/Si (001) substrates by molecular beam epitaxy. Both nominal and vicinal…”
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GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy by RICHTER, M, ROSSEL, C, FOMPEYRINE, J, WEBB, D. J, TOPURIA, T, GERL, C, SOUSA, M, MARCHIORI, C, CAIMI, D, SIEGWART, H, RICE, P. M

“…For heterogeneous integration of III-V compound materials on 200 mm Si wafers, we present a complete in-situ molecular beam epitaxy (MBE) process from a Ge…”
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1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs by El Kazzi, M., Webb, D.J., Czornomaz, L., Rossel, C., Gerl, C., Richter, M., Sousa, M., Caimi, D., Siegwart, H., Fompeyrine, J., Marchiori, C.

“…The formation of low- k Hf silicate in a-Si passivated gate stacks on GaAs has been identified as the limiting factor in reaching the 1 nm CET as required for…”
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Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity by Norga, G. J., Marchiori, C., Guiller, A., Locquet, J. P., Rossel, Ch, Siegwart, H., Caimi, D., Fompeyrine, J., Conard, T.

“…We use the reflection high-energy electron diffraction oscillation phase shift to monitor the stability of the Sr barrier, prepared by exposure of Si(100) to…”
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Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices by Andersson, C., Rossel, C., Sousa, M., Webb, D.J., Marchiori, C., Caimi, D., Siegwart, H., Panayiotatos, Y., Dimoulas, A., Fompeyrine, J.

“…We report a study of La 2O 3 with lanthanum germanate (LGO) as interfacial layer, or LGO alone as a gate dielectric candidate for scaled germanium…”
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Co-integrating high mobility channels for future CMOS, from substrate to circuits by Czornomaz, L., Daix, N., Uccelli, E., Caimi, D., Sousa, M., Rossel, C., Siegwart, H., Marchiori, C., Fompeyrine, J.

“…Direct wafer bonding can be a vehicle for the dense co-integration of co-planar nano-scaled SiGe p-FETs and InGaAs n-FETs. Like for SiGe, direct wafer bonding…”
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In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction by Webb, D.J., Fompeyrine, J., Nakagawa, S., Dimoulas, A., Rossel, C., Sousa, M., Germann, R., Alvarado, S.F., Locquet, J.P., Marchiori, C., Siegwart, H., Callegari, A., Kiewra, E., Sun, Y., De Souza, J., Hoffmann, N.

“…We report a study of MOS capacitors having a dielectric of HfO2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various…”
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III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS by Uccelli, E., Daix, N., Czornomaz, L., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Fompeyrine, J.

“…As Si-CMOS scaling has become increasingly challenging, III-V compound semiconductors such as In x Ga 1-x As (x≥0.53) (InGaAs) are receiving much interest as…”
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Field-effect transistors with SrHfO3 as gate oxide by Rossel, C., Mereu, B., Marchiori, C., Caimi, D., Sousa, M., Guiller, A., Siegwart, H., Germann, R., Locquet, J.-P., Fompeyrine, J., Webb, D. J., Dieker, Ch, Seo, Jin Won

“…The authors demonstrate that the compound SrHfO3 grown epitaxially on Si(100) by molecular-beam epitaxy is a potential gate dielectric to fabricate n- and…”
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Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit by El Kazzi, M., Czornomaz, L., Webb, D. J., Rossel, C., Caimi, D., Siegwart, H., Fompeyrine, J., Marchiori, C.

“…A thin amorphous silicon interlayer, inserted between the III-V semiconductor and the gate dielectric is expected to prevent III-V oxidation, as required for…”
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Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low D it by El Kazzi, M., Czornomaz, L., Webb, D. J., Rossel, C., Caimi, D., Siegwart, H., Fompeyrine, J., Marchiori, C.

“…A thin amorphous silicon interlayer, inserted between the III-V semiconductor and the gate dielectric is expected to prevent III-V oxidation, as required for…”
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Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistors by El Kazzi, M., Czornomaz, L., Rossel, C., Gerl, C., Caimi, D., Siegwart, H., Fompeyrine, J., Marchiori, C.

“…Metal-oxide-semiconductor (MOS) capacitors were fabricated by depositing composite 2nm HfO 2 /1nm Al 2 O 3 /1nm a-Si gate stacks on p-In 0.53 Ga 0.47 As/InP…”
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