Search Results - "Siefert, J. M."
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In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces
Published in Applied physics letters (22-05-1989)Get full text
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Hydrogenated amorphous silicon p-doping with diborane, trimethylboron and trimethylgallium
Published in Applied Physics A Solids and Surfaces (01-12-1992)Get full text
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3
Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasma
Published in Applied physics letters (01-05-1983)“…The growth process, optical and structural properties of a-Si:H films deposited from a silane multipole dc discharge are analyzed by real time and…”
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4
Mass spectrometric study of NF3 plasma etching of silicon
Published in Plasma chemistry and plasma processing (01-12-1990)Get full text
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I n s i t u investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces
Published in Applied physics letters (22-05-1989)“…Transparent conducting oxide (TCO)/hydrogenated amorphous silicon (a-Si:H) interfaces are investigated combining kinetic ellipsometry and Kelvin probe…”
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Nucleic acid related compounds. 30. Transformations of adenosine to the first 2',3'-aziridine-fused nucleosides, 9-(2,3-epimino-2,3-dideoxy-.beta.-D-ribofuranosyl)adenine and 9-(2,3-epimino-2,3-dideoxy-.beta.-D-lyxofuranosyl)adenine
Published in Journal of organic chemistry (01-04-1979)Get full text
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7
Large area deposition of a-Si PV modules
Published in IEEE Conference on Photovoltaic Specialists (1990)“…Large-area deposition scaling-up (from 30*30 to 50*60 and 60*100 m/sup 2/) is reported within the context of PV (photovoltaic) industrial development…”
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