Search Results - "Siefert, J. M."

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    Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasma by Drevillon, B., Perrin, J., Siefert, J. M., Huc, J., Lloret, A., de Rosny, G., Schmitt, J. P. M.

    Published in Applied physics letters (01-05-1983)
    “…The growth process, optical and structural properties of a-Si:H films deposited from a silane multipole dc discharge are analyzed by real time and…”
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    Journal Article
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    I n   s i t u investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces by Drevillon, B., Kumar, Satyendra, Roca i Cabarrocas, P., Siefert, J. M.

    Published in Applied physics letters (22-05-1989)
    “…Transparent conducting oxide (TCO)/hydrogenated amorphous silicon (a-Si:H) interfaces are investigated combining kinetic ellipsometry and Kelvin probe…”
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    Journal Article
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    Large area deposition of a-Si PV modules by Boman, L., Bubenzer, A., Meot, J., Schmitt, J.P.M., Siefert, J.M.

    “…Large-area deposition scaling-up (from 30*30 to 50*60 and 60*100 m/sup 2/) is reported within the context of PV (photovoltaic) industrial development…”
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    Conference Proceeding